Film forming device

US12123093B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12123093-B2
Application numberUS-202217674856-A
CountryUS
Kind codeB2
Filing dateFeb 18, 2022
Priority dateSep 30, 2019
Publication dateOct 22, 2024
Grant dateOct 22, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied. The second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1≥D1 is satisfied.

First claim

Opening claim text (preview).

What is claimed is: 1. A film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device comprising: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by an electric discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied, wherein the second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1≥D1 is satisfied, and wherein no other electrodes are disposed between the second electrode and the discharge port. 2. The film forming device according to claim 1 , wherein a relationship of 1≤L1/D1≤10 is satisfied. 3. The film forming device according to claim 1 , wherein assuming that a diameter of the inner tube is D2, a relationship of D2/D1≤0.7 is satisfied. 4. The film forming device according to claim 1 , wherein, at the discharge port, a protrusion amount of an end part of the inner tube in the axial direction with respect to an end part of the outer tube is more than 0 mm. 5. The film forming device according to claim 1 , wherein the substrate is an insulator, and a third electrode is formed on a surface of the substrate opposite to a surface facing the discharge port. 6. The film forming device according to claim 5 , wherein the third electrode is grounded. 7. The film forming device according to claim 5 , wherein a negative voltage is applied to the third electrode. 8. The film forming device according to claim 7 , wherein the negative voltage applied to the third electrode is a direct current or a direct current pulse. 9. The film forming device according to claim 1 , further comprising: a transport unit that relatively moves the substrate with respect to the discharge port. 10. The film forming device according to claim 1 , wherein an AC voltage or a pulsed voltage having a frequency of 500 kHz or less is applied to the second electrode.

Assignees

Inventors

Classifications

  • Plasma torches · CPC title

  • Relative arrangement or disposition of electrodes; moving means · CPC title

  • Coaxial inlets for each gas · CPC title

  • Working under atmospheric pressure or higher · CPC title

  • C23C16/515Primary

    using pulsed discharges · CPC title

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Frequently asked questions

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What does patent US12123093B2 cover?
Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted …
Who is the assignee on this patent?
Fujifilm Corp
What technology area does this patent fall under?
Primary CPC classification C23C16/515. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 22 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).