Optical semiconductor element, optical semiconductor device, optical transmission system, and method of manufacturing optical semiconductor device

Patent metadata

Field	Value
Publication number	US-12119417-B2
Application number	US-202117335201-A
Country	US
Kind code	B2
Filing date	Jun 1, 2021
Priority date	Feb 7, 2019
Publication date	Oct 15, 2024
Grant date	Oct 15, 2024

Abstract

An optical semiconductor element includes: a semiconductor substrate that is semi-insulating; a columnar body that is formed on a front surface-side of the semiconductor substrate and configured to emit or receive light from the front surface-side; a front surface-side electrode that is connected to the columnar body; a back surface-side electrode formed on a back surface-side of the semiconductor substrate; and an electrically conductive member that is formed to penetrate through the semiconductor substrate to connect the front surface-electrode and the back surface-side electrode, and has a protruding portion protruding on the front surface-side of the semiconductor substrate.

First claim

What is claimed is:

1. An optical semiconductor element comprising:
a semiconductor substrate that is semi-insulating;
a columnar body that is formed on a front surface-side of the semiconductor substrate and configured to emit or receive light from the front surface-side;
a front surface-side electrode that is connected to the columnar body;
a back surface-side electrode formed on a back surface-side of the semiconductor substrate; and
an electrically conductive member that is formed to penetrate through the semiconductor substrate to connect the front surface-side electrode and the back surface-side electrode, and has a protruding portion protruding, with respect to the front surface-side electrode, on the front surface-side of the semiconductor substrate,
wherein the electrically conductive member is arranged separately from the columnar body,
wherein the protruding portion has a height exceeding an upper surface of the columnar body, and
wherein a top surface of the protruding portion is positioned higher than the upper surface of the columnar body and is separated from the upper surface of the columnar body.

2. The optical semiconductor element according to claim 1 , wherein
the protruding portion has a height exceeding the front surface-side electrode.

3. The optical semiconductor element according to claim 1 , wherein
the electrically conductive member and the front surface-side electrode are connected to each other on a surface of the semiconductor substrate on which the columnar body is formed.

4. The optical semiconductor element according to claim 2 , wherein
the electrically conductive member and the front surface-side electrode are connected to each other on a surface of the semiconductor substrate on which the columnar body is formed.

5. The optical semiconductor element according to claim 1 , further comprising
a bump formed on the back surface-side electrode.

6. The optical semiconductor element according to claim 1 , wherein
the front surface-side electrode includes an electrode having a closed shape in planar view, and the protruding portion is connected to at least a part of the electrode having the closed shape in planar view.

7. An optical semiconductor device comprising:
the optical semiconductor element according to claim 1 ; and
an optical member that is optically coupled to the optical semiconductor element, wherein
a positional relationship between the optical member and the columnar body is defined by the protruding portion.

8. The optical semiconductor device according to claim 7 , wherein
the optical semiconductor element is a light-emitting element, and
wherein the optical member is a light diffusion member configured to diffuse light emitted from the optical semiconductor element toward an outside.

9. An optical transmission system comprising:
the optical semiconductor device according to claim 7 ; and
a light transmission path, as the optical member configured to transmit light emitted from the optical semiconductor element or light received at the optical semiconductor element.

Assignees

• Fujifilm Business Innovation Corp

Inventors

• Inada Satoshi
• Ono Kenichi
• MINAMIRU Takeshi
• Murakami Akemi
• Hayakawa Junichiro
• Otsuka Tsutomu

Classifications

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F77/00

  Constructional details of devices covered by this subclass (constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F77/206 Primary

  for devices having potential barriers · CPC title

• H01S5/0239

  Combinations of electrical or optical elements · CPC title

• H01S5/183

  having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] · CPC title