Method for producing a planar light circuit and planar light circuit

Patent metadata

Field	Value
Publication number	US-12117649-B2
Application number	US-202217835141-A
Country	US
Kind code	B2
Filing date	Jun 8, 2022
Priority date	Jun 8, 2022
Publication date	Oct 15, 2024
Grant date	Oct 15, 2024

Abstract

A method for producing a planar light circuit is specified. The method comprises: providing a substrate free of light producing regions, depositing a waveguide layer, applying a photostructurable mask on the waveguide layer, photostructuring of the photostructurable mask such that the photostructurable mask is removed in regions, etching of the waveguide layer in the regions such that channels are produced in the waveguide layer, wherein the channels confine waveguides, removal of the photostructurable mask layer, and singulating into a planar light circuit.Furthermore, a planar light circuit is specified.

First claim

We claim:

1. A method for producing a planar light circuit comprising
providing a substrate free of light producing regions,
depositing a waveguide layer,
applying a photostructurable mask on the waveguide layer,
photostructuring of the photostructurable mask such that the photostructurable mask is removed in regions,
etching of the waveguide layer in the regions such that channels are produced in the waveguide layer, wherein the channels confine waveguides and wherein a majority of the waveguide layer seen in top view remains on the substrate,
removal of the photostructurable mask,
singulating into a planar light circuit.

2. The method for producing a planar light circuit according to claim 1 , wherein
the waveguide layer comprises a material selected from the following group: SiN x , SiO x N y , GaN, HfO 2 , LiNbO 3 , Ta 2 O 5 , Nb 2 O 5 , HfO 2 , TiO 2 , Si and mixtures thereof.

3. The method for producing a planar light circuit according to claim 1 , wherein
an adhesion layer is deposited on the waveguide layer before applying the photostructurable mask.

4. The method for producing a planar light circuit according to claim 1 , wherein
an adhesion promoter is applied on the waveguide layer before applying the photostructurable mask.

5. The method for producing a planar light circuit according to claim 1 , wherein
the waveguide layer is deposited by plasma-enhanced chemical vapor deposition.

6. The method for producing a planar light circuit according to claim 5 , wherein
a low frequency plasma source is used in the plasma-enhanced chemical vapor deposition.

7. The method for producing a planar light circuit according to claim 1 , wherein
the waveguide layer is etched by inductively coupled plasma etching.

8. The method for producing a planar light circuit according to claim 7 , wherein
a reaction chamber for the inductively coupled plasma etching is cleaned before etching the waveguide layer.

9. The method for producing a planar light circuit according to claim 1 , wherein
a cladding is applied on the waveguide layer after removal of the photostructurable mask.

10. A method for producing a planar light circuit comprising:
providing a substrate free of light producing regions;
depositing a waveguide layer;
applying a photostructurable mask on the waveguide layer;
photostructuring of the photostructurable mask such that the photostructurable mask is removed in regions;
etching of the waveguide layer in the regions such that channels are produced in the waveguide layer, wherein the channels confine waveguides and wherein a majority of the waveguide layer seen in top view remains on the substrate; and
removing the photostructurable mask,
singulating into a planar light circuit, wherein
an adhesion layer is deposited on the waveguide layer before applying the photostructurable mask,
an adhesion promoter is applied on the waveguide layer before applying the photostructurable mask,
a cladding is applied on the waveguide layer after removal of the photostructurable mask, and,
the channels are only partially filled with the cladding.

Assignees

• Ams Osram Int Gmbh

Inventors

• Lenef Alan
• Whitehead James

Classifications

• G02B2006/12173

  Masking · CPC title

• G02B2006/12061

  Silicon · CPC title

• G02B6/132

  by deposition of thin films · CPC title

• G02B6/125

  Bends, branchings or intersections · CPC title

• G02B6/131

  by using epitaxial growth (epitaxial growth for semiconductors H10P14/20) · CPC title