Radiation-emitting device

Patent metadata

Field	Value
Publication number	US-12113156-B2
Application number	US-201917609801-A
Country	US
Kind code	B2
Filing date	May 9, 2019
Priority date	May 9, 2019
Publication date	Oct 8, 2024
Grant date	Oct 8, 2024

Abstract

A radiation-emitting device may include a radiation-emitting semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface, a first phosphor configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. The second wavelength range may be or include infrared light. The device may further include an up-converting phosphor configured to convert infrared light of the second wavelength range into visible light.

First claim

The invention claimed is:

1. A radiation-emitting device comprising:
a radiation-emitting semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface;
a first phosphor configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, said second wavelength range comprising infrared light;
an up-converting phosphor comprising at least two different types of activator ions enabling multi-photon processes, wherein the up-converting phosphor is configured to convert infrared light of the second wavelength range already converted by the first phosphor into visible light.

2. The radiation-emitting device according to claim 1 , wherein the up-converting phosphor comprises up-converting nanoparticles.

3. The radiation-emitting device according to claim 2 , wherein the up-converting nanoparticles comprise β-NaYF 4 doped with lanthanoids.

4. The radiation-emitting device according to claim 2 , wherein the up-converting nanoparticles are coated with an organic dye.

5. The radiation-emitting device according to claim 2 , wherein the up-converting nanoparticles have a size ranging from 10 nanometers to 100 nanometers inclusive.

6. The radiation-emitting device according to claim 1 , wherein the radiation-emitting semiconductor chip is configured to emit blue light as electromagnetic radiation of the first wavelength range.

7. The radiation-emitting device according to claim 1 , wherein the second wavelength range comprises red light.

8. The radiation-emitting device according to claim 1 , wherein the first phosphor comprises a nitride doped with a rare earth element.

9. The radiation-emitting device according to claim 8 , wherein the nitride doped with the rare earth element has one of the following chemical formulas: (Ca,Sr,Ba)AlSiN 3 :Eu 2+ , (Ca,Sr)AlSiN 3 :Eu 2+ , Sr(Ca,Sr)Al 2 Si 2 N 6 :Eu 2+ , M 2 Si 5 N 8 :Eu 2+ ; wherein M is selected from the group consisting of Ca, Ba, Sr, or a combination thereof.

10. The radiation-emitting device according to claim 1 , further comprising a second phosphor configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range, said third wavelength range ranging from yellow to green light.

11. The radiation-emitting device according to claim 10 , wherein the second phosphor comprises a garnet doped with a rare earth element.

12. The radiation-emitting device according to claim 11 , wherein the garnet doped with the rare earth element has one of the following chemical formulas: (Lu,Y) 3 (Al,Ga) 5 O 12 :Ce 3+ , Lu 3 Al 5 O 12 :Ce 3+ , Lu 3 (Al,Ga) 5 O 12 :Ce 3+ , Y 3 Al 5 O 12 :Ce 3+ , Y 3 (Al,Ga) 5 O 12 :Ce 3+ .

13. The radiation-emitting device according to claim 1 , wherein the first phosphor and/or a second phosphor are phosphor particles embedded in a resin, said resin comprising up-converting nanoparticles of the up-converting phosphor.

14. The radiation-emitting device according to claim 1 , emitting electromagnetic radiation with a color impression in the white spectral range having a color rendering index of at least 70.

15. The radiation-emitting device according to claim 14 , wherein the emitted electromagnetic radiation has a warm white color impression.

16. A radiation-emitting device comprising:
a radiation-emitting semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface;
a first phosphor configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, said second wavelength range comprising infrared light;
an up-converting phosphor configured to convert infrared light of the second wavelength range into visible light, wherein the up-converting phosphor comprises up-converting nanoparticles coated with an organic dye.

17. A radiation-emitting device comprising:
a radiation-emitting semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface;
a first phosphor configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, said second wavelength range comprising infrared light;
an up-converting phosphor configured to convert infrared light of the second wavelength range into visible light;
a second phosphor configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range, said third wavelength range ranging from yellow to green light.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Opto Semiconductors Gmbh

Inventors

• Liu Tomin
• Leow T'Ing Qi'Ao
• Lim Keng Chong

Classifications

• H10H20/8513 Primary

  having two or more wavelength conversion materials · CPC title

• G02B5/208

  for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation · CPC title

• C09K11/7705

  with alkali or alkaline earth metals · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• C09K11/77068

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title