Heat radiation member

Patent metadata

Field	Value
Publication number	US-12112993-B2
Application number	US-201917289259-A
Country	US
Kind code	B2
Filing date	Aug 30, 2019
Priority date	Oct 31, 2018
Publication date	Oct 8, 2024
Grant date	Oct 8, 2024

Abstract

A heat radiation member excellent in electrical insulation and better in thermal conduction is provided. The heat radiation member includes a substrate composed of a composite material containing diamond and a metallic phase, an insulating plate provided on at least a part of front and rear surfaces of the substrate and composed of an aluminum nitride, and a single bonding layer interposed between the substrate and the insulating plate, the heat radiation member having thermal conductivity not lower than 400 W/m·K.

First claim

The invention claimed is:

1. A heat radiation member for a semiconductor element comprising:
a substrate composed of a composite material containing diamond and a metallic phase;
an insulating plate provided on a surface of the substrate and composed of aluminum nitride; and
a single bonding layer formed on the surface of the substrate, interposed between the substrate and the insulating plate,
wherein a constituent metal of the metallic phase is pure silver or a silver-based alloy,
the bonding layer is composed of an alloy containing Ag, Cu, and Ti, and
a concentration of the Ti in the bonding layer is not lower than 40 atomic % and not higher than 95 atomic % with a total amount of Ag, Cu, and Ti being defined as 100 atomic %.

2. The heat radiation member according to claim 1 , wherein
the bonding layer is composed of an alloy containing Ti and a main metal element that makes up the metallic phase.

3. The heat radiation member according to claim 1 , wherein the bonding layer comprise a brazing material composed of a silver-based alloy based on the eutectic alloy of Ag and Cu and containing Ti.

4. The heat radiation member according to claim 3 , the concentration of Ti is not lower than 0.5 atomic % and not higher than 3.0 atomic % with the total amount of Ag, Cu, and Ti being defined as 100 atomic %.

Assignees

• Almt Corp

Inventors

• MATSUGI Ryota
• Iwayama Isao
• Tanaka Chieko
• Morigami Hideaki

Classifications

• H10W40/258

  Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W40/254 Primary

  Diamond · CPC title

• B23K35/325

  Ti as the principal constituent · CPC title

• B23K1/0016

  Soldering of electronic components · CPC title