Display substrate and manufacturing method thereof, and display device
US-2022384555-A1 · Dec 1, 2022 · US
US12112006B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12112006-B2 |
| Application number | US-202318227754-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 28, 2023 |
| Priority date | Jun 23, 2021 |
| Publication date | Oct 8, 2024 |
| Grant date | Oct 8, 2024 |
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A method of manufacturing a display device, including forming a first sensing insulating layer on a display panel comprising an active area and a peripheral area; forming a first conductive layer on the first sensing insulating layer; forming a second sensing insulating layer to cover the first conductive layer; forming a second conductive layer comprising a conductive material on the second sensing insulating layer; forming a passivation layer on the second conductive layer; substantially simultaneously etching the second conductive layer and the passivation layer through a photolithography process; and forming a third sensing insulating layer to cover the passivation layer. The passivation layer includes an inorganic material.
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What is claimed is: 1. A method of manufacturing a display device, comprising: forming a first sensing insulating layer on a display panel comprising an active area and a peripheral area; forming a first conductive layer on the first sensing insulating layer; forming a second sensing insulating layer to cover the first conductive layer; forming a second conductive layer comprising a conductive material on the second sensing insulating layer; forming a passivation layer on the second conductive layer; substantially simultaneously etching the second conductive layer and the passivation layer through a photolithography process; and forming a third sensing insulating layer to cover the passivation layer, wherein the passivation layer comprises an inorganic material. 2. The method of claim 1 , wherein, when the second conductive layer and the passivation layer are substantially simultaneously etched, at least a portion of the second sensing insulating layer is removed to form a side surface of the second sensing insulating layer, which is aligned with a side surface of the second conductive layer. 3. The method of claim 2 , further comprising forming a contact hole through the first sensing insulating layer and the second sensing insulating layer in the peripheral area after the forming of the second sensing insulating layer and before the forming of the second conductive layer. 4. The method of claim 3 , further comprising removing the passivation layer in an area overlapping the contact hole to expose the second conductive layer after the second conductive layer and the passivation layer are substantially simultaneously etched.
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