Composition for forming underlayer film in imprinting method, kit, pattern producing method, laminate, and method for manufacturing semiconductor element

Patent metadata

Field	Value
Publication number	US-12109752-B2
Application number	US-202117484492-A
Country	US
Kind code	B2
Filing date	Sep 24, 2021
Priority date	Mar 29, 2019
Publication date	Oct 8, 2024
Grant date	Oct 8, 2024

Abstract

A composition for forming an underlayer film in an imprinting method, which includes a high-molecular-weight compound having a polymerizable functional group and a monomer having a plurality of crosslinking functional groups capable of being bonded to the polymerizable functional group, and in which a Hansen solubility parameter distance, which is a difference between a Hansen solubility parameter of the high-molecular-weight compound and a Hansen solubility parameter of the monomer, is 5.0 or less, and regarding the two crosslinking functional groups among the plurality of crosslinking functional groups, the number of atoms, which constitute a shortest atom chain mutually linking crosslinking points in the respective crosslinking functional groups, is 7 or more; a laminate including a layer formed of the composition for forming an underlayer film; and a method for manufacturing a semiconductor element, in which a semiconductor element is manufactured using a pattern obtained by a pattern producing method.

First claim

What is claimed is:

1. A composition for forming an underlayer film in an imprinting method, comprising:
a high-molecular-weight compound having a polymerizable functional group; and
a monomer having a plurality of crosslinking functional groups capable of being bonded to the polymerizable functional group,
wherein a Hansen solubility parameter distance, which is a difference between a Hansen solubility parameter of the high-molecular-weight compound and a Hansen solubility parameter of the monomer, is 5.0 or less, and
regarding two crosslinking functional groups among the plurality of crosslinking functional groups, the number of atoms, which constitute a shortest atom chain mutually linking crosslinking points in the respective crosslinking functional groups, is 7 or more.

2. The composition for forming an underlayer film according to claim 1 ,
wherein at least one kind of the high-molecular-weight compound or the monomer has a ring structure.

3. The composition for forming an underlayer film according to claim 2 ,
wherein both the high-molecular-weight compound and the monomer have a ring structure.

4. The composition for forming an underlayer film according to claim 2 ,
wherein the ring structure contains an aromatic ring.

5. The composition for forming an underlayer film according to claim 1 ,
wherein the Hansen solubility parameter distance is 3 or less.

6. The composition for forming an underlayer film according to claim 1 ,
wherein the number of atoms constituting the atom chain is 7 to 20.

7. The composition for forming an underlayer film according to claim 1 ,
wherein at least one kind of the polymerizable functional group or the plurality of crosslinking functional groups includes a group having an ethylenically unsaturated bond.

8. The composition for forming an underlayer film according to claim 1 ,
wherein at least one kind of the high-molecular-weight compound or the monomer contains a hydrogen bonding group.

9. The composition for forming an underlayer film according to claim 1 , further comprising a solvent,
wherein a content of the solvent with respect to the composition for forming an underlayer film is 99% by mass or greater.

10. The composition for forming an underlayer film according to claim 1 ,
wherein a molecular weight of the monomer is 200 to 1,000.

11. The composition for forming an underlayer film according to claim 1 ,
wherein the high-molecular-weight compound includes at least one kind of an acrylic resin, a novolac resin, or a vinyl resin.

12. A kit for imprinting, comprising a combination of the composition for forming an underlayer film according to claim 1 and a composition for forming a pattern.

13. A pattern producing method comprising:
forming an underlayer film on a substrate by using the composition for forming an underlayer film according to claim 1 ;
applying a composition for forming a pattern onto the underlayer film;
curing the composition for forming a pattern in a state of being in contact with a mold; and
peeling off the mold from the composition for forming a pattern.

14. The pattern producing method according to claim 13 ,
wherein a contact angle of the substrate to pure water is 60 degrees or larger.

15. The pattern producing method according to claim 13 ,
wherein the forming of the underlayer film includes applying the composition for forming an underlayer film onto the substrate by a spin coating method.

16. The pattern producing method according to claim 13 ,
wherein the applying of the composition for forming a pattern onto the underlayer film is performed by an ink jet method.

17. A laminate comprising:
a substrate; and
a layer formed of the composition for forming an underlayer film according to claim 1 .

18. A method for manufacturing a semiconductor element,
wherein a semiconductor element is manufactured using a pattern obtained by the producing method according to claim 13 .

Assignees

• Fujifilm Corp

Inventors

• HAKAMATA Akihiro
• Shimoju Naoya
• Goto Yuichiro

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G03F7/2018

  Masking pattern obtained by selective application of an ink or a toner, e.g. ink jet printing · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title