Dual-pulse MIG welding power source based on SiC power devices

Patent metadata

Field	Value
Publication number	US-12103118-B2
Application number	US-201917422262-A
Country	US
Kind code	B2
Filing date	Oct 23, 2019
Priority date	Apr 30, 2019
Publication date	Oct 1, 2024
Grant date	Oct 1, 2024

Abstract

A dual-pulse MIG welding power source based on SiC power devices may include a main circuit and a digital control circuit. The main circuit may include a power frequency rectifier filter module, a first SiC high frequency inverter module, a first high frequency transformer, and a first SiC fast full-wave rectifier filter module connected sequentially. The power frequency rectifier filter module may be connected to a three-phase AC power supply, and the first SiC fast full-wave rectifier filter module may be connected to a load. The digital control circuit may include a digital human-machine interaction module, a core control module, a SiC high-frequency drive module, a load voltage and current detection feedback module, and a wire feeding control module. The digital human-machine interaction module may be connected to the core control module.

First claim

The invention claimed is:

1. A dual-pulse MIG welding power source based on SiC power devices, comprises:
a main circuit and a digital control circuit;
the main circuit comprises a power frequency rectifier filter module, a first SiC high frequency inverter module, a first high frequency transformer, and a first SiC fast full-wave rectifier filter module connected sequentially;
wherein the power frequency rectifier filter module is connected to a three-phase AC power supply, and the first SiC fast full-wave rectifier filter module is connected to a load;
the digital control circuit comprises a digital human-machine interaction module, a core control module, a SiC high-frequency drive module, a load voltage and current detection feedback module, and a wire feeding control module;
wherein the digital human-machine interaction module is connected to the core control module;
wherein one end of the SiC high-frequency drive module is connected to a pulse width modulation (PWM) output of the core control module, and another end of the SiC high-frequency drive module is connected to the first SiC high frequency inverter module;
wherein one end of the load voltage and current detection feedback module is connected to the load, and another end of the load voltage and current detection feedback module is connected to an A/D conversion end of the core control module; and
wherein one end of the wire feeding control module is connected to the core control module, and another end of the wire feeding control module is connected to a wire feeder DC motor, wherein the wire feeding control module comprises: a wire feeding control chip, a controller area network (CAN) communication circuit, an H-bridge drive circuit, and a DC motor voltage feedback circuit;
wherein the wire feeding control chip is signally connected to the core control module through the CAN communication circuit to realize a communication between the wire feeding control chip and the core control module;
wherein the wire feeding control chip is connected to the wire feeder DC motor through the H-bridge drive circuit to drive the wire feeder DC motor to operate;
wherein the DC motor voltage feedback circuit is configured to detect a voltage of the wire feeder DC motor in real time; and
wherein the DC motor voltage feedback circuit is connected with the wire feeding control chip to realize a closed loop control of the wire feeder DC motor.

2. The dual-pulse MIG welding power supply based on SiC power devices according to claim 1 , wherein the first SiC high frequency inverter module comprises a SiC power switch transistor Q 1 , a SiC power switch transistor Q 2 , a SiC power switch transistor Q 3 , and a SiC power switch transistor Q 4 ;
wherein the SiC power switch transistor Q 1 , the SiC power switch transistor Q 2 , the SiC power switch transistor Q 3 , and the SiC power switch transistor Q 4 are respectively connected in parallel with a first RC absorption circuit;
wherein the SiC power switch transistor Q 1 , the SiC power switch transistor Q 2 , the SiC power switch transistor Q 3 and the SiC power switch transistor Q 4 form a full-bridge inverter circuit, and the full-bridge inverter circuit is connected to a primary of the first high frequency transformer through a blocking capacitor C b ;
wherein the first SiC fast full-wave rectifier filter module comprises a SiC Schottky diode group DR 1 and a SiC Schottky diode group DR 2 ;
wherein a first secondary output terminal of the first high frequency transformer is connected to a third secondary output terminal of the first high frequency transformer through the SiC Schottky diode group DR 1 and the SiC Schottky diode group DR 2 connected sequentially; and
wherein a connection point between the SiC Schottky diode group DR 1 and the SiC Schottky diode group DR 2 is connected to one end of the load, and a second secondary output terminal of the first high frequency transformer is connected to another end of the load through an output filter reactance Lr.

3. The dual-pulse MIG welding power supply based on SiC power devices according to claim 2 , wherein the SiC Schottky diode group DR 1 and the SiC Schottky diode group DR 2 each include three SiC Schottky diodes and a second RC absorption circuit connected in parallel.

4. The dual-pulse MIG welding power supply based on SiC power devices according to claim 2 , wherein the main circuit further comprises a second SiC high frequency inverter module, a second high frequency transformer, and a second SiC fast full-wave rectifier filter module;
wherein the second SiC high frequency inverter module is connected to the power frequency rectifier filter module, and the second SiC fast full-wave rectifier filter module is connected with the load;
wherein another end of the SiC high frequency drive module is connected with the second SiC high frequency inverter module;
wherein a topology of the second SiC high frequency inverter module is a same topology as that of the first SiC high frequency inverter module;
wherein a topology of the second high frequency transformer is a same topology as that of the first high frequency transformer; and
wherein a topology of the second SiC fast full-wave rectifier filter module is a same topology as that of the first SiC fast full-wave rectifier filter module.

5. The dual-pulse MIG welding power supply based on SiC power devices according to claim 2 , wherein the core control module includes a high-speed DSC core control module.

6. The dual-pulse MIG welding power supply based on SiC power devices according to claim 1 , wherein the H-bridge drive circuit comprises a switching transistor Qf 1 , a switching transistor Qf 2 , a switching transistor Qf 3 , a switching transistor Qf 4 , a braking resistor BRK 1 , and a relay JD 1 ;
wherein the switching transistor Qf 1 , the switching transistor Qf 2 , the switching transistor Qf 3 , and the switching transistor Qf 4 form an H-bridge topology;
wherein an output end of the H-bridge topology is connected to the wire feeder DC motor; and
wherein the braking resistor BRK 1 and the relay JD 1 are connected in series, and the braking resistor BRK 1 and the relay JD 1 that are connected in series are connected in parallel to the output of the H-bridge topology.

Assignees

• Univ South China Tech

Inventors

• Wang Zhenmin
• Zhong Qiming
• Xie Fangxiang
• Fan Wenyan
• Luo Zhuo

Classifications

• H02M3/335

  using semiconductor devices only · CPC title

• H02M1/44

  Circuits or arrangements for compensating for electromagnetic interference in converters or inverters · CPC title

• B23K9/125

  Feeding of electrodes (for stabilising arc B23K9/073) · CPC title

• Y02B70/10

  Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes · CPC title

• B23K9/173

  and of a consumable electrode · CPC title