Solid electrolytic capacitor containing a deoxidized anode

Patent metadata

Field	Value
Publication number	US-12100561-B2
Application number	US-202117481718-A
Country	US
Kind code	B2
Filing date	Sep 22, 2021
Priority date	Sep 23, 2020
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

A capacitor that comprises a capacitor element is provided. The capacitor element comprises a deoxidized and sintered anode body that is formed from a powder having a specific charge of about 35,000 μF*V/g or more. Further, a dielectric overlies the anode body and a solid electrolyte overlies the dielectric. The capacitor also exhibits a normalized aged leakage current of about 0.1% or less.

First claim

What is claimed is:

1. A solid electrolytic capacitor comprising a capacitor element, the capacitor element comprising a deoxidized and sintered anode body that is formed from a tantalum powder having a specific charge of about 100,000 to about 350,000 μF*V/g, a dielectric which includes tantalum pentoxide and that is formed at a forming voltage of about 35 volts or more that overlies the anode body, and a solid electrolyte that overlies the dielectric, wherein the capacitor exhibits a dielectric strength of about 0.4 V/nm or more and an Aged DCL of about 0.5 μA or less and a normalized aged leakage current of about 0.075% or less as determined according to the following equation:
Normalized Aged Leakage Current=100×(Aged DCL/CV )

wherein,
Aged DCL is the leakage current as measured at a temperature of about 23° C. and at a rated voltage for about 60 seconds after the capacitor is subjected to life testing at a temperature of 85° C. and the rated voltage for 120 hours and then allowed to recover for 60 minutes at a temperature of about 23° C.;
C is initial capacitance (Farads) as determined at a temperature of about 23° C. and an operating frequency of 120 Hz; and
V is the rated voltage (volts).

2. The solid electrolytic capacitor of claim 1 , wherein the Aged DCL is about 25 μA or less.

3. The solid electrolytic capacitor of claim 1 , wherein the solid includes manganese dioxide.

4. The solid electrolytic capacitor of claim 1 , further comprising:
an anode termination that is in electrical connection with the anode body;
a cathode termination that is in electrical connection with the solid electrolyte; and
a housing that encloses the capacitor element and leaves exposed at least a portion of the anode termination and the cathode termination.

5. The solid electrolytic capacitor of claim 4 , wherein the housing is formed from a resinous material that encapsulates the capacitor element.

6. The solid electrolytic capacitor of claim 1 , wherein the powder has a specific charge of from about 100,000 to about 300,000 μF*V/g.

7. The solid electrolytic capacitor of claim 1 , wherein a moisture barrier layer overlies the solid electrolyte.

8. The solid electrolytic capacitor of claim 1 , wherein there is no pre-sintering step prior to deoxidation.

9. The solid electrolytic capacitor of claim 1 , wherein the deoxidized and sintered anode body exhibits a degree of compressive strength of about 1 kilogram-force (“kg/”) or more.

10. A method for forming a solid electrolytic capacitor, the method comprising:
forming an anode by a process that includes compacting a powder which includes tantalum having a specific charge of about 100,000 to about 350,000 μF*V/g into a porous anode body, subjecting the porous anode body to a deoxidation process to form a deoxidized anode body, sintering the deoxidized anode body;
anodically oxidizing the deoxidized and sintered anode body at a forming voltage of about 35 volts or more to form a dielectric which includes tantalum pentoxide that overlies the anode body; and
forming a solid electrolyte that overlies the dielectric;
wherein the capacitor exhibits a dielectric strength of about 0.4 V/nm or more and an Aged DCL of about 0.5 μA or less and a normalized aged leakage current of about 0.075% or less as determined according to the following equation:
Normalized Aged Leakage Current=100×(Aged DCL/CV )

wherein,
Aged DCL is the leakage current as measured at a temperature of about 23° C. and at a rated voltage for about 60 seconds after the capacitor is subjected to life testing at a temperature of 85° C. and the rated voltage for 120 hours and then allowed to recover for 60 minutes at a temperature of about 23° C.;
C is initial capacitance (Farads) as determined at a temperature of about 23° C. and an operating frequency of 120 Hz; and
V is the rated voltage (volts).

11. The method of claim 10 , wherein an anode lead wire is connected to the porous anode body.

12. The method of claim 10 , wherein the deoxidization process includes inserting the porous anode body into an enclosure that contains a getter material.

13. The method of claim 12 , further comprising heating an atmosphere of the enclosure to a temperature of from about 700° ° C. to about 1,200° C.

14. The method of claim 10 , wherein sintering occurs at a temperature of from about 700° C. to about 1,600° C.

15. The method of claim 10 , further comprising pre-sintering the porous anode body prior to the deoxidation process.

16. The method of claim 10 , wherein the Aged DCL is about 0.25 μA or less.

17. The method of claim 10 , wherein the powder has a specific charge of from about 100,000 to about 300,000 μF*V/g.

18. The method of claim 10 , wherein the solid electrolyte includes manganese dioxide.

19. The method of claim 10 , further comprising forming a moisture barrier layer that overlies the solid electrolyte.

20. The method of claim 10 , further comprising no pre-sintering step prior to deoxidation.

Assignees

• Avx Corp
• Kyocera Avx Components Corp

Inventors

• Wakatsuki Masayuki
• Sasaki Yusuke
• Etou Shinpei

Classifications

• H01G9/0003

  Protection against electric or thermal overload; cooling arrangements; means for avoiding the formation of cathode films (H01G9/12 takes precedence) · CPC title

• H01G9/07 Primary

  Dielectric layers · CPC title

• H01G9/0036

  Formation of the solid electrolyte layer · CPC title

• H01G9/032

  Inorganic semiconducting electrolytes, e.g. MnO2 · CPC title

• H01G2009/05

  consisting of tantalum, niobium, or sintered material; Combinations of such electrodes with solid semiconductive electrolytes, e.g. manganese dioxide · CPC title