Pattern writing of magnetic order using ion irradiation of a magnetic phase transitional thin film

Patent metadata

Field	Value
Publication number	US-12100539-B2
Application number	US-202016898851-A
Country	US
Kind code	B2
Filing date	Jun 11, 2020
Priority date	Jun 11, 2019
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase.

First claim

What is claimed is:

1. An article comprising:
a substrate; and
a layer of an FeRh alloy disposed on the substrate;
wherein the alloy comprises:
a continuous antiferromagnetic phase; and
one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase;
wherein the one or more discrete phase has a superparamagnetic limit that exceeds the superparamagnetic limit of the continuous phase.

2. The article of claim 1 , wherein the alloy comprises an array of the discrete phases.

3. The article of claim 1 , wherein the discrete phase is ferromagnetic.

4. A method comprising:
providing an article comprising:
a substrate; and a layer of an FeRh alloy disposed on the substrate; wherein the alloy comprises: a continuous antiferromagnetic phase; and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase; wherein the one or more discrete phase has a superparamagnetic limit that exceeds the superparamagnetic limit of the continuous phase; wherein the discrete phase is ferromagnetic; and

orienting the magnetic polarization of a first ferromagnetic discrete phase.

5. The method of claim 4 , further comprising:
orienting the magnetic polarization of a second ferromagnetic discrete phase in a direction different from that of the first ferromagnetic discrete phase.

6. A method comprising:
providing an article comprising:
a substrate; and a layer of an FeRh alloy disposed on the substrate; wherein the alloy comprises: a continuous antiferromagnetic phase; and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase; wherein the one or more discrete phase has a superparamagnetic limit that exceeds the superparamagnetic limit of the continuous phase; wherein the discrete phase is ferromagnetic; and

determining the orientation of the magnetic polarization of the ferromagnetic discrete phase.

7. The article of claim 1 , wherein the area of the discrete phase is no more than 1000 μm 2 .

8. The article of claim 1 , wherein the area of the discrete phase is no more than 1000 nm 2 .

9. The article of claim 1 , wherein the discrete phase has a metamagnetic transition temperature of 20° C. to 140° C.

10. A method comprising:
providing an article comprising:
a substrate; and a layer of an FeRh alloy disposed on the substrate; wherein the alloy comprises: a continuous antiferromagnetic phase; and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase; wherein the one or more discrete phase has a superparamagnetic limit that exceeds the superparamagnetic limit of the continuous phase; and

detecting the presence, absence, or location of any ferromagnetic discrete phases.

11. The method claim 10 , further comprising:
adjusting the temperature of the article before the detection.

12. The article of claim 1 , wherein at least two of the discrete phases have different metamagnetic temperatures.

13. A method comprising:
providing an article comprising:
a substrate; and a layer of an FeRh alloy disposed on the substrate; wherein the alloy comprises: a continuous antiferromagnetic phase; and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase; wherein the one or more discrete phase has a superparamagnetic limit that exceeds the superparamagnetic limit of the continuous phase; wherein at least two of the discrete phases have different metamagnetic temperatures; and

detecting the presence, absence, or location of any ferromagnetic discrete phases;
adjusting the temperature of the article; and
detecting the presence, absence or location of any ferromagnetic discrete phases.

14. The article of claim 1 , wherein the discrete phases have a size and pitch that exceed the superparamagnetic limit of the continuous phase.

15. The article of claim 1 , wherein the substrate comprises MgO.

16. The article of claim 1 , wherein the substrate comprises a piezoelectric material.

17. A method comprising:
providing an article comprising:
a substrate; and a layer of an FeRh alloy disposed on the substrate; wherein the alloy comprises: a continuous antiferromagnetic phase; and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase; wherein the one or more discrete phase has a superparamagnetic limit that exceeds the superparamagnetic limit of the continuous phase; wherein the substrate comprises a piezoelectric material; and

applying a voltage to the piezoelectric material that alters the metamagnetic temperature of one or more of the discrete phases; and detecting the presence, absence, or location of any ferromagnetic discrete phases.

18. A method comprising:
providing an article comprising:
a substrate; and
a layer comprising a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate; and

directing an ion source at one or more portions of the alloy to create one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase;
wherein the one or more discrete phases has a superparamagnetic limit that exceeds the superparamagnetic limit of the continuous phase.

19. The method of claim 18 , wherein the ion source produces He + ions.

20. The method of claim 18 , wherein a mask is used to define the discrete phases.

21. The method of claim 18 , wherein the ion source is a beam.

22. The method of claim 18 , wherein the ion source is a He + beam having a diameter of no more than 5 nm.

23. The method of claim 18 , wherein the dose of the ion source is adjusted to create at least two discrete phases having different metamagnetic transition temperatures.

24. A method comprising:
providing an article comprising:
a substrate; and
a layer comprising a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate; and

directing an electron source at one or more portions of the alloy to create one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase;
wherein the one or more discrete phases has a superparamagnetic limit that exceeds the superparamagnetic limit of the continuous phase.

25. The method of claim 24 , wherein the electron source produces electrons with kinetic energy between 300 keV and 460 keV.

26. The method of claim 24 , wherein the electron source produces electrons with kinetic energy above 460 keV.

27. The method of claim 24 , wherein a mask is used to define the discrete phases.

28. The method of claim 24 , wherein the electron source is a beam.

29. The method of claim 24 , wherein the electron source is an electron beam having a diameter of no more than 5 nm.

30. The method of claim 24 , wherein the dose of the electron source is adjusted to create at least two discrete phases having different metamagnetic transition temperatures.

31. The method of claim 24

Assignees

• Us Gov Sec Navy

Inventors

• Bennett Steven P
• Cress Cory D
• Prestigiacomo Joseph
• Van 'T Erve Olaf M J

Classifications

• H01F10/14

  containing iron or nickel ({H01F10/126} , H01F10/13, H01F10/16 take precedence) · CPC title

• H01F10/28

  characterised by the composition of the substrate · CPC title

• H01F41/00

  Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties · CPC title

• H01F10/002 Primary

  Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature (H01F10/3218 and H01F10/3268 take precedence) · CPC title

• H01F41/34 Primary

  in patterns, e.g. by lithography · CPC title