Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devices

Patent metadata

Field	Value
Publication number	US-12100437-B2
Application number	US-202117410079-A
Country	US
Kind code	B2
Filing date	Aug 24, 2021
Priority date	Aug 25, 2020
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

A magnetic tunnel junction includes at least one free layer, at least one reference layer, and at least one tunnel barrier separating the free layer and the reference layer, wherein the free layer is an inhomogeneous granular layer including at least two grains, each grain of the at least two grains being sensibly magnetically decoupled from the other adjacent grains of the at least two grains.

First claim

The invention claimed is:

1. A multivalued non-volatile memory element comprising a magnetic tunnel junction, the magnetic tunnel junction comprising at least one free layer configured to provide a tunnel magnetoresistance signal, at least one reference layer, and at least one tunnel barrier separating the free layer and the reference layer, wherein the free layer configured to provide a tunnel magnetoresistance signal is an inhomogeneous granular layer comprising at least two grains, each grain of the at least two grains being sensibly magnetically decoupled from the other adjacent grains of the at least two grains when an intergrain coupling energy integrated over a lateral area of said grain does not exceed half of an effective anisotropy energy of said grain integrated on its volume, wherein the multivalued non-volatile memory element is a magnetic random-access memory element of the spin-orbit torque type or SOT-MRAM (Magnetic Random-Access Memory), wherein the inhomogeneous granular free layer is at least a bilayer comprising a ferromagnetic layer and an antiferromagnetic layer.

2. The multivalued non-volatile memory element comprising a magnetic tunnel junction according to claim 1 , wherein the grains have a size comprised between 3 nanometers and 30 nanometers.

3. The multivalued non-volatile memory element comprising a magnetic tunnel junction according to claim 1 , wherein the inhomogeneous free layer is at least a trilayer comprising two ferromagnetic layers separated by an antiferromagnetic layer.

4. The multivalued non-volatile memory element comprising a magnetic tunnel junction according to claim 1 , wherein the inhomogeneous free layer comprises a heterogeneous alloy of at least two immiscible phases, the alloy comprising at least a magnetic material and a non-magnetic material.

5. The multivalued non-volatile memory element comprising a magnetic tunnel junction according to claim 4 , wherein the non-magnetic material is an oxide.

6. The multivalued non-volatile memory element comprising a magnetic tunnel junction according to claim 1 , wherein the free layer is manufactured according to any one of the following processes:
a first process comprising co-sputtering a magnetic material and an oxide or nitride material immiscible with the magnetic material,
a second process comprising:
co-sputtering a magnetic material and a metallic element whose oxide has a more negative heat of formation than the magnetic material, and
an oxidation step by natural oxidation or by an oxygen plasma,

a third process comprising:
depositing multilayers of ultrathin bilayers, each bilayer comprising a layer of a magnetic material and a layer of an oxide or nitride material immiscible with the magnetic material, and
annealing at temperatures above 250° C.,

a fourth process comprising:
depositing multilayers of ultrathin bilayers, each bilayer comprising a layer of a magnetic material and a layer of a metallic element whose oxide has a more negative heat of formation than the magnetic material,
an oxidation step by natural oxidation or by an oxygen plasma, and
annealing at temperatures above 250° C.

7. A process of writing a multivalued non-volatile memory element according to claim 1 , the process comprising applying a current pulse of a predefined amplitude and duration to reverse a magnetization orientation of at least part of the grains of the inhomogeneous granular free layer.

8. The process according to claim 7 , wherein the amplitude and duration are predefined such that a probability of reversing the magnetization orientation of the at least part of the grains of the inhomogeneous free layer by applying the current pulse is k/N, with k a number inferior to N and with N the number of grains of the inhomogeneous granular free layer.

9. Memristor comprising a multivalued non-volatile element according to claim 1 .

10. Neuromorphic circuit comprising at least a memristor according to claim 9 .

Assignees

• Commissariat Energie Atomique
• Centre Nat Rech Scient
• Inst Polytechnique Grenoble

Inventors

• Dieny Bernard
• Mansueto Marco
• Sousa Ricardo
• Prejbeanu Ioan-Lucian
• Buda-Prejbeanu Liliana

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/80

  Constructional details · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title