Imaging device and electronic apparatus

Patent metadata

Field	Value
Publication number	US-12096142-B2
Application number	US-202318300062-A
Country	US
Kind code	B2
Filing date	Apr 13, 2023
Priority date	Feb 28, 2014
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

First claim

What is claimed is:

1. A light detecting device, comprising:
a first unit including a first plurality of photodiodes and a first plurality of transfer transistors;
a second unit including a second plurality of photodiodes and a second plurality of transfer transistors, wherein the second unit is adjacent to the first unit;
a third unit including a first reset transistor, a first amplification transistor, a first select transistor, and a first transistor, wherein
the third unit is between the first unit and the second unit in a plan view,
the first plurality of photodiodes of the first unit share the first amplification transistor, and
the first amplification transistor and the first reset transistor have a common source drain region; and

a fourth unit including a second reset transistor, a second amplification transistor, a second select transistor, and a second transistor, wherein
the second plurality of photodiodes of the second unit share the second amplification transistor, and
the second unit is between the third unit and the fourth unit in the plan view.

2. The light detecting device according to claim 1 , wherein the first amplification transistor, the first reset transistor, the first select transistor, and the first transistor are in a specific direction.

3. The light detecting device according to claim 2 , wherein the first amplification transistor has a length longer than each of the first reset transistor, the first select transistor, and the first transistor in the specific direction.

4. The light detecting device according to claim 2 , further comprising a well contact, wherein the well contact is located adjacent to the third unit in the specific direction.

5. The light detecting device according to claim 1 , wherein the first reset transistor and the first transistor have a common source drain region.

6. The light detecting device according to claim 1 , wherein the first amplification transistor and the first reset transistor share at least one of a drain region or a source region.

7. The light detecting device according to claim 1 , wherein
the first plurality of photodiodes are located within a first rectangular area including a first side and a second side,
the first reset transistor, the first amplification transistor, the first select transistor, and the first transistor are located adjacent to the first side of the first rectangular area, and
the first side is longer than the second side.

8. A light detecting device, comprising:
a first unit including a first plurality of photodiodes and a first plurality of transfer transistors;
a second unit including a second plurality of photodiodes and a second plurality of transfer transistors, wherein the second unit is adjacent to the first unit;
a third unit including a first reset transistor, a first amplification transistor, a first select transistor, and a first transistor, wherein
the third unit is between the first unit and the second unit in a plan view,
the first plurality of photodiodes of the first unit share the first amplification transistor,
the first amplification transistor, the first reset transistor, the first select transistor, and the first transistor are in a specific direction, and
the first amplification transistor and the first reset transistor have a common source drain region; and

a fourth unit including a second reset transistor, a second amplification transistor, a second select transistor, and a second transistor, wherein
the second plurality of photodiodes of the second unit share the second amplification transistor, and
the second unit is between the third unit and the fourth unit in the plan view; and

a well contact that is located adjacent to the third unit in the specific direction.

9. The light detecting device according to claim 8 , wherein the first amplification transistor has a length longer than each of the first reset transistor, the first select transistor, and the first transistor in the specific direction.

10. The light detecting device according to claim 8 , wherein the first amplification transistor and the first reset transistor share at least one of a drain region or a source region.

11. The light detecting device according to claim 8 , wherein
the first plurality of photodiodes are located within a first rectangular area including a first side and a second side,
the first reset transistor, the first amplification transistor, the first select transistor, and the first transistor are located adjacent to the first side of the first rectangular area, and
the first side is longer than the second side.

12. A light detecting device, comprising:
a first unit including a first plurality of photodiodes and a first plurality of transfer transistors, wherein the first plurality of photodiodes are located within a first rectangular area including a first side and a second side;
a second unit including a second plurality of photodiodes and a second plurality of transfer transistors, wherein
the second unit is adjacent to the first unit, and
the second plurality of photodiodes are located within a second rectangular area;

a third unit including a first reset transistor, a first amplification transistor, a first select transistor, and a first transistor, wherein
the third unit is between the first unit and the second unit in a plan view,
the third unit is adjacent to the first side of the first rectangular area, and
the first plurality of photodiodes of the first unit share the first amplification transistor; and

a fourth unit including a second reset transistor, a second amplification transistor, a second select transistor, and a second transistor, wherein
the second plurality of photodiodes of the second unit share the second amplification transistor,
the second unit is between the third unit and the fourth unit in the plan view,
a well contact located adjacent to the second side of the first rectangular area, and
the first side is longer than the second side.

Assignees

• Sony Group Corp

Inventors

• Kato Nanako
• Wakano Toshifumi
• Otake Yusuke

Classifications

• H04N25/778 Primary

  comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself · CPC title

• H04N25/78

  Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters · CPC title

• H04N25/618

  for random or high-frequency noise · CPC title

• H10F39/803

  Pixels having integrated switching, control, storage or amplification elements · CPC title

• H10F39/813

  Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels · CPC title