High power acoustic resonators

Patent metadata

Field	Value
Publication number	US-12095445-B2
Application number	US-202117317383-A
Country	US
Kind code	B2
Filing date	May 11, 2021
Priority date	Jun 15, 2018
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate and a piezoelectric diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) has interleaved fingers on the diaphragm. A thickness of the interleaved fingers is greater than or equal to 0.85 times a thickness of the diaphragm and less than or equal to 2.5 times the thickness of the diaphragm.

First claim

It is claimed:

1. An acoustic resonator device comprising:
a substrate including a base and an intermediate layer;
a piezoelectric diaphragm over a cavity in at least the intermediate layer and the substrate; and
an interdigital transducer (IDT) having interleaved fingers on the diaphragm,
wherein at least one of the interleaved fingers has a thickness that is greater than or equal to 0.85 times a thickness of the diaphragm and less than or equal to 2.5 times the thickness of the diaphragm.

2. The acoustic resonator device of claim 1 , wherein the interleaved fingers are substantially aluminum.

3. The acoustic resonator device of claim 2 , further comprising;
a dielectric layer on the diaphragm and that is over and between the interleaved fingers, the dielectric layer having a thickness greater than zero and less than or equal to 0.25 times the thickness of the diaphragm,
wherein the thickness of the interleaved fingers is greater than or equal to 0.875 times the thickness of the diaphragm and less than or equal to 2.25 times the thickness of the diaphragm.

4. The acoustic resonator device of claim 1 , wherein the interleaved fingers are substantially copper and the thickness of the interleaved fingers is between 0.85 and 1.42 times the thickness of the diaphragm, or between 1.95 and 2.325 times the thickness of the diaphragm.

5. The acoustic resonator device of claim 1 , wherein the piezoelectric diaphragm is attached to the intermediate dielectric layer.

6. The acoustic resonator device of claim 1 , wherein the thickness of the diaphragm is between 300 nm and 500 nm.

7. The acoustic resonator device of claim 1 , wherein a pitch of the interleaved fingers is between 6 and 12.5 times the thickness of the diaphragm.

8. The acoustic resonator device of claim 1 , wherein an aperture of the IDT is between 20 and 60 microns.

9. The acoustic resonator device of claim 1 , wherein the diaphragm and the IDT are configured such that an RF signal applied to the IDT excites a shear primary acoustic mode in the diaphragm.

10. The acoustic resonator device of claim 9 , wherein the diaphragm is one of lithium niobate and lithium tantalate.

11. An acoustic resonator device comprising:
a piezoelectric diaphragm attached to a substrate via one or more intermediate layer; and
an interdigital transducer (IDT) having interleaved fingers on the diaphragm,
wherein at least one of the interleaved fingers has a thickness that is greater than or equal to 0.85 times a thickness of the diaphragm and less than or equal to 2.5 times the thickness of the diaphragm.

12. The acoustic resonator device of claim 11 , wherein the interleaved fingers are substantially aluminum.

13. The acoustic resonator device of claim 12 , further comprising:
a dielectric layer on the diaphragm and that is over and between the interleaved fingers, the dielectric layer having a thickness greater than zero and less than or equal to 0.25 times the thickness of the diaphragm,
wherein the thickness of the interleaved fingers is greater than or equal to 0.875 times and less than or equal to 2.25 times the thickness of the diaphragm.

14. The acoustic resonator device of claim 11 , wherein the interleaved fingers are substantially copper and the thickness of the interleaved fingers is between 0.85 and 1.42 times the thickness of the diaphragm, or between 1.95 and 2.325 times the thickness of the diaphragm.

15. The acoustic resonator device of claim 1 , wherein the thickness of the at least one interleaved finger and the diaphragm is measured in a direction orthogonal to a surface of the diaphragm.

16. The acoustic resonator device of claim 11 , wherein the thickness of the diaphragm is between 300 nm and 500 nm.

17. The acoustic resonator device of claim 11 , wherein a pitch of the interleaved fingers is between 6 and 12.5 times the thickness of the diaphragm.

18. The acoustic resonator device of claim 11 , wherein an aperture of the IDT is between 20 and 60 microns.

19. The acoustic resonator device of claim 11 , wherein the diaphragm and the IDT are configured such that an RF signal applied to the IDT excites a shear primary acoustic mode in the diaphragm.

20. The acoustic resonator device of claim 19 , wherein the diaphragm is one of lithium niobate and lithium tantalate.

Assignees

• Murata Manufacturing Co

Inventors

• Garcia Bryant
• Hammond Robert
• Turner Patrick
• Fenzi Neal
• Plesski Viktor
• Yantchev Ventsislav

Classifications

• H03H9/02

  Details · CPC title

• H03H9/13

  for networks consisting of piezoelectric or electrostrictive materials (for networks using surface acoustic waves H03H9/145) · CPC title

• H03H9/02015

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H9/54

  comprising resonators of piezoelectric or electrostrictive material (comprising resonators using surface acoustic waves H03H9/64) · CPC title

• H03H9/02157

  Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness · CPC title