Barrier film

Patent metadata

Field	Value
Publication number	US-12091519-B2
Application number	US-201917286562-A
Country	US
Kind code	B2
Filing date	Oct 22, 2019
Priority date	Oct 26, 2018
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta 2 O 5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.

First claim

The invention claimed is:

1. A barrier film, comprising:
a base layer; and
an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta 2 O 5 at a rate of 0.09 nm/s,
wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer, and
wherein the second region satisfies the relationship of Si content>N content>O content.

2. The barrier film according to claim 1 having a water vapor transmission rate measured at a temperature of 38° C. and 100% relative humidity of 10×10 −4 g/m 2 ·day or less.

3. The barrier film according to claim 1 , wherein the first region is in a position closer to the base layer than the second region.

4. The barrier film according to claim 1 , wherein the first region satisfies the relationship: O content>Si content>N content.

5. The barrier film according to claim 4 , wherein the O content of the first region is in a range of 50 to 65 atomic %, the Si content of the first region is in a range of 35 to 45 atomic %, and the N content of the first region is in a range of 1 to 15 atomic %.

6. The barrier film according to claim 5 , wherein the first region has a ratio (a/b) of the O content (a) to the Si content (b) in a range of 1.1 to 1.9.

7. The barrier film according to claim 1 , wherein the Si content of the second region is in a range of 45 to 60 atomic %, the N content of the second region is in a range of 20 to 35 atomic %, and the O content of the second region is in a range of 10 to 30 atomic %.

8. The barrier film according to claim 7 , wherein the difference between the highest value of the Si content in the second region and the highest value of the O content in the first region is 15 atomic % or less.

9. The barrier film according to claim 1 , wherein the inorganic layer is obtained by plasma-treating polysilazane having a unit of Formula 1 below:

wherein, R 1 , R 2 and R 3 are each independently a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an alkylsilyl group, an alkylamino group or an alkoxy group.

10. An electrical or electronic element comprising the barrier film according to claim 1 .

Assignees

• Lg Chemical Ltd

Inventors

• Shin Sung Jin
• Hwang Jang Yeon
• Jeong Hee Joon
• Park Bo Ra
• Yang Hee Wang

Classifications

• C08J7/0423 Primary

  with at least one layer of inorganic material and at least one layer of a composition containing a polymer binder · CPC title

• C23C18/04 Primary

  Pretreatment of the material to be coated (C23C18/06 takes precedence) · CPC title

• H10K50/844

  Encapsulations · CPC title

• C23C18/1295

  with after-treatment of the deposited inorganic material · CPC title

• C23C18/1233

  Organic substrates · CPC title