Magnetoresistance effect element, storage element, and electronic device

Patent metadata

Field	Value
Publication number	US-12089502-B2
Application number	US-202017419414-A
Country	US
Kind code	B2
Filing date	Jan 8, 2020
Priority date	Jan 30, 2019
Publication date	Sep 10, 2024
Grant date	Sep 10, 2024

Abstract

Provided is a magnetoresistance effect element configured by laminating a first electrode, a magnetization pinned layer having a fixed magnetization direction, a first insulating layer, a magnetization free layer having a variable magnetization direction, a second insulating layer, and a second electrode in order, in which the magnetization pinned layer includes a first magnetic body provided on the first electrode, and a second magnetic body provided on the first magnetic body via a non-magnetic metal layer, at least any of the first magnetic body and the second magnetic body is configured by providing a magnetic layer directly above a non-magnetic layer, and either the non-magnetic layer or the magnetic layer is formed in a multilayer structure in which different materials are alternately laminated.

First claim

The invention claimed is:

1. A magnetoresistance effect element comprising: a first electrode;
a magnetization pinned layer that is provided on the first electrode and has a fixed magnetization direction;
a first insulating layer provided on the magnetization pinned layer;
a magnetization free layer that is provided on the first insulating layer and has a variable magnetization direction;
a second insulating layer provided on the magnetization free layer; and
a second electrode provided on the second insulating layer,
wherein
the magnetization pinned layer includes a first magnetic body provided on the first electrode, and a second magnetic body provided on the first magnetic body via a non-magnetic metal layer,
at least any of the first magnetic body and the second magnetic body is configured by providing a magnetic layer directly above a non-magnetic layer, and
the non-magnetic layer is formed in a multilayer structure in which different materials are alternately laminated.

2. The magnetoresistance effect element according to claim 1 , wherein the first magnetic body is configured by providing a first magnetic layer in which different metal materials are alternately laminated directly above a first non-magnetic layer formed of a non-magnetic metal material.

3. The magnetoresistance effect element according to claim 2 , wherein the non-magnetic metal material forming the first non-magnetic layer contains any of Mo, W, and Ir.

4. The magnetoresistance effect element according to claim 2 , wherein a film thickness of the first non-magnetic layer is 0.4 nm or more and 2.2 nm or less.

5. The magnetoresistance effect element according to claim 1 , wherein the second magnetic body is configured by providing a second magnetic layer formed of a magnetic material containing a 3d transition metal and B directly above a second non-magnetic layer in which a magnetic material containing a 3d transition metal and B and a non-magnetic metal material are alternately laminated.

6. The magnetoresistance effect element according to claim 5 , wherein the non-magnetic metal material forming one layer of the second non-magnetic layer contains any of Mo, W, and Ir.

7. The magnetoresistance effect element according to claim 5 , wherein the second non-magnetic layer is provided in a laminated structure in which at least one of the uppermost layer and the lowermost layer is a layer formed of a non-magnetic metal material.

8. The magnetoresistance effect element according to claim 5 , wherein a film thickness of the second non-magnetic layer formed of the non-magnetic metal material is 0.07 nm or more and 0.15 nm or less.

9. The magnetoresistance effect element according to claim 5 , wherein a volume ratio between the non-magnetic metal material and the magnetic material containing the 3d transition metal and B in the entire second non-magnetic layer is 48.3%:51.7% to 75.9%:24.1%.

10. The magnetoresistance effect element according to claim 1 , wherein the first insulating layer and the second insulating layer are formed of an insulating oxide material.

11. The magnetoresistance effect element according to claim 1 , wherein the magnetization free layer includes a magnetic layer formed of a magnetic material containing a 3d transition metal and B.

12. The magnetoresistance effect element according to claim 1 , wherein each of the first magnetic body and the second magnetic body further includes a magnetic layer formed of a magnetic metal material.

13. A storage element comprising: a first electrode;
a magnetization pinned layer that is provided on the first electrode and has a fixed magnetization direction;
a first insulating layer provided on the magnetization pinned layer;
a magnetization free layer that is provided on the first insulating layer and has a variable magnetization direction;
a second insulating layer provided on the magnetization free layer; and
a second electrode provided on the second insulating layer,
wherein
the magnetization pinned layer includes a first magnetic body provided on the first electrode, and a second magnetic body provided on the first magnetic body via a non-magnetic metal layer,
at least any of the first magnetic body and the second magnetic body is configured by providing a magnetic layer directly above a non-magnetic layer, and
the non-magnetic layer is formed in a multilayer structure in which different materials are alternately laminated.

14. An electronic device comprising a magnetoresistance effect element,
the magnetoresistance effect element including: a first electrode; a magnetization pinned layer that is provided on the first electrode and has a fixed magnetization direction; a first insulating layer provided on the magnetization pinned layer; a magnetization free layer that is provided on the first insulating layer and has a variable magnetization direction; a second insulating layer provided on the magnetization free layer; and a second electrode provided on the second insulating layer,
wherein
the magnetization pinned layer includes a first magnetic body provided on the first electrode, and a second magnetic body provided on the first magnetic body via a non-magnetic metal layer,
at least any of the first magnetic body and the second magnetic body is configured by providing a magnetic layer directly above a non-magnetic layer, and
the non-magnetic layer is formed in a multilayer structure in which different materials are alternately laminated.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Kariyada Eiji

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/80

  Constructional details · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• H01F10/26

  characterised by the substrate or intermediate layers {(H01F10/06 and H01F10/32 take precedence)} · CPC title