Negative electrode for power storage device, power storage device, and electric device

US12087938B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12087938-B2
Application numberUS-201615374048-A
CountryUS
Kind codeB2
Filing dateDec 9, 2016
Priority dateDec 11, 2015
Publication dateSep 10, 2024
Grant dateSep 10, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for a power storage device includes a number of composites in particulate forms. The composites include a negative electrode active material, a first functional material, and a compound. The compound includes a constituent element of the negative electrode active material and a constituent element of the first functional material. The negative electrode active material includes a region in contact with at least one of the first functional material or the compound.

First claim

Opening claim text (preview).

What is claimed is: 1. A negative electrode for a power storage device comprising: a negative electrode active material layer comprising a particle over a current collector, the particle comprising: a first region comprising silicon and lithium; a second region comprising titanium and one of oxygen and nitrogen; a third region comprising titanium and silicon; and a fourth region comprising titanium and silicon; wherein the third region covers the first region, the second region, and the fourth region, wherein the fourth region has a larger concentration of silicon than the third region, wherein the first region is in contact with at least part of the second region, wherein in an interfacial region between the first region and the second region a weight percentage of the silicon continuously changes, and wherein the second region is in contact with at least part of the fourth region. 2. The negative electrode for a power storage device, according to claim 1 , wherein a material of the second region has a higher Young's modulus than a material of the first region. 3. The negative electrode for a power storage device, according to claim 1 , wherein an atomic ratio of silicon to titanium is two to eight in the particle. 4. The negative electrode for a power storage device, according to claim 1 , wherein a surface of the particle is covered by the third region. 5. A power storage device comprising the negative electrode for a power storage device according to claim 1 . 6. An electrical device comprising the power storage device according to claim 5 . 7. The negative electrode for a power storage device, according to claim 1 , wherein an area where the first region is in contact with at least part of the second region is larger than an area where the second region is in contact with at least part of the fourth region. 8. A negative electrode for a power storage device comprising: a negative electrode active material layer comprising a particle over a current collector, the particle comprising: a first region comprising silicon and lithium; a second region comprising titanium and one of oxygen and nitrogen; a third region comprising titanium and silicon; and a fourth region comprising titanium and silicon; wherein the third region covers the first region, the second region, and the fourth region, wherein the fourth region has a larger concentration of silicon than the third region, wherein the third region is in direct contact with each of the first region, the second region, and the fourth region, wherein the first region is in contact with at least part of the second region, wherein in an interfacial region between the first region and the second region a weight percentage of the silicon continuously changes, and wherein the second region is in contact with at least part of the fourth region. 9. The negative electrode for a power storage device, according to claim 8 , wherein a material of the second region has a higher Young's modulus a material of the first region. 10. The negative electrode for a power storage device, according to claim 8 , wherein an atomic ratio of silicon to titanium is two to eight in the particle. 11. The negative electrode for a power storage device, according to claim 8 , wherein a surface of the particle is covered by the third region. 12. A power storage device comprising the negative electrode for a power storage device according to claim 8 . 13. An electrical device comprising the power storage device according to claim 12 . 14. The negative electrode for a power storage device, according to claim 8 , wherein an area where the first region is in contact with at least part of the second region is larger than an area where the second region is in contact with at least part of the fourth region.

Assignees

Inventors

Classifications

  • with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium ion capacitors [LIC] · CPC title

  • arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives · CPC title

  • specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation · CPC title

  • characterised by their material · CPC title

  • Nanostructures, e.g. nanofibres, nanotubes or fullerenes · CPC title

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What does patent US12087938B2 cover?
A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for a power storage device includes a number of composites in particulate form…
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification H01M4/366. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 10 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).