Coating composition for pattern inversion

Patent metadata

Field	Value
Publication number	US-12084592-B2
Application number	US-201716339489-A
Country	US
Kind code	B2
Filing date	Oct 2, 2017
Priority date	Oct 4, 2016
Publication date	Sep 10, 2024
Grant date	Sep 10, 2024

Abstract

A coating composition for pattern inversion that fills a gap in an organic underlayer film pattern formed on a substrate to be processed by transferring a resist pattern to an underlayer and forms a flat polysiloxane film, the coating composition including a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes. The hydrolysable silane is represented by Formula (1):

R 1 a Si(R 2 ) 4-a   Formula (1)

and contains 50% by mole to 100% by mole of a hydrolysable silane in which a is 0 and 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2. The alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.

First claim

The invention claimed is:

1. A coating composition coating an organic underlayer film pattern formed by transferring a resist pattern to an underlayer, the coating composition comprising a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes; wherein in the polysiloxane to be obtained, a ratio of the silanol group to the silanol group reacted with the alcohol ((silanol group):(silanol group reacted with the alcohol)) is 100:1 to 1:100,
wherein the hydrolysable silane is represented by Formula (1):
R 1 a Si(R 2 ) 4-a   Formula (1)

wherein R 1 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group and bonded to a silicon atom through a Si—C bond, R 2 is an alkoxy group, an acyloxy group, or a halogen atom, and a is an integer of 0 to 3; and contains 50% by mole to less than 100% by mole of a hydrolysable silane in which a is 0 and more than 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2,
wherein the polysiloxane is formed from only hydrolysable silanes represented by Formula (1), and
wherein the coating composition is used for coating a patterned organic underlayer film, the patterned organic underlayer film is formed by etching a silicon hard mask layer through a resist pattern and etching an organic underlayer film through the patterned silicon hard mask layer.

2. The coating composition according to claim 1 , wherein the hydrolysable silane of Formula (1) contains any of tetraalkoxysilane in which a in Formula (1) is 0, methyltrialkoxysilane in which a in Formula (1) is 1, vinyltrialkoxysilane, phenyltrialkoxysilane, or dimethyldialkoxysilane in which a in Formula (1) is 2.

3. The coating composition according to claim 1 , wherein the alcohol is an alkoxy group-containing alcohol.

4. The coating composition according to claim 1 , wherein the alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.

5. The coating composition according to claim 1 , wherein the hydrolysis-condensate of the hydrolysable silane is obtained by using an acid or base as a catalyst.

6. The coating composition according to claim 1 , comprising an acid and one or more selected from the group consisting of curing catalysts.

7. A method for producing a semiconductor device comprising steps of:
(1) forming an organic underlayer film on a semiconductor substrate;
(2) applying a silicon hard mask-forming composition to the organic underlayer film and baking the silicon hard mask-forming composition to form a silicon hard mask layer;
(3) applying a resist composition to the silicon hard mask layer to form a resist layer;
(4) exposing the resist film, and then developing the resist to obtain a resist pattern;
(5) etching the silicon hard mask layer through the resist pattern;
(6) etching the organic underlayer film through the patterned silicon hard mask layer to form a patterned organic underlayer film;
(7) applying the coating composition according to claim 1 to the patterned organic underlayer film and curing the coating composition to form a polysiloxane film filling a gap in the pattern;
(8) etching the organic underlayer film to obtain an inverted pattern; and
(9) etching the substrate through the polysiloxane film having the inverted pattern.

8. The coating composition according to claim 1 , wherein R 2 is a halogen atom.

9. The coating composition according to claim 1 , wherein the hydrolysable silane contains 50% by mole to less than 100% by mole of a hydrolysable silane in which a is 0 and more than 0% by mole to 50% by mole of a hydrolysable silane in which a is 1.

10. The coating composition according to claim 1 , wherein the hydrolysable silane contains 60% by mole to less than 100% by mole of a hydrolysable silane in which a is 0 and more than 0% by mole to 40% by mole of a hydrolysable silane in which a is 1 or 2.

11. The coating composition according to claim 1 , wherein the hydrolysable silane contains 60% by mole to less than 100% by mole of a hydrolysable silane in which a is 0 and more than 0% by mole to 40% by mole of a hydrolysable silane in which a is 1.

Assignees

• Nissan Chemical Corp

Inventors

• Yaguchi Hiroaki
• Nakajima Makoto
• Endo Yuki
• Shibayama Wataru
• Shigaki Shuhei

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• B05D7/00

  Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials {(coating of foodstuffs A23P20/17, A23P20/15, A23P20/18)} · CPC title

• C09D183/04 Primary

  Polysiloxanes · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/16

  Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) · CPC title