Transversely-excited film bulk acoustic resonator

Patent metadata

Field	Value
Publication number	US-12081187-B2
Application number	US-202117463322-A
Country	US
Kind code	B2
Filing date	Aug 31, 2021
Priority date	Jun 15, 2018
Publication date	Sep 3, 2024
Grant date	Sep 3, 2024

Abstract

Acoustic resonator devices and filters, and methods of making the same. An acoustic resonator includes a piezoelectric plate and an interdigital transducer (IDT) including interleaved fingers on the piezoelectric plate. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate. The acoustic resonator further includes a front-side dielectric layer on the piezoelectric plate between the fingers of the IDT, wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the front-side dielectric layer.

First claim

It is claimed:

1. An acoustic resonator device comprising:
a piezoelectric layer;
an interdigital transducer (IDT) comprising interleaved fingers at the piezoelectric layer, the piezoelectric layer and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer; and
a dielectric layer on the piezoelectric layer, the dielectric layer being over and between the interleaved fingers of the IDT,
wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the dielectric layer.

2. The acoustic resonator device of claim 1 further comprising a substrate, wherein a portion of the piezoelectric layer forms a diaphragm over a cavity in the substrate, and wherein the interleaved fingers of the IDT are on the diaphragm.

3. The device of claim 1 , wherein a direction of acoustic energy flow of the primary shear acoustic mode is substantially orthogonal to front and back surfaces of the piezoelectric layer.

4. The device of claim 3 , wherein:
a z-axis of the piezoelectric layer is normal to the front and back surfaces, and
the IDT is oriented such that the interleaved fingers of the IDT are parallel to an x-axis of the piezoelectric layer.

5. The device of claim 1 , wherein the piezoelectric layer is one of lithium niobate and lithium tantalate.

6. The device of claim 1 , wherein the dielectric layer is silicon dioxide or silicon nitride.

7. The device of claim 1 , wherein the dielectric layer has a thickness that is greater than 0 nm and less than or equal to 500 nm.

8. A filter device comprising:
at least one piezoelectric layer;
a conductor pattern at the at least one piezoelectric layer, the conductor pattern comprising a plurality of interdigital transducers (IDTs), each of the plurality of IDTs comprising interleaved fingers, wherein the at least one piezoelectric layer and all of the plurality of IDTs are configured such that a radio frequency signal applied to each IDT excites a respective primary shear acoustic mode in the at least one piezoelectric layer; and
a dielectric layer on the at least one piezoelectric layer between the fingers of at least one of the plurality of IDTs, wherein a resonance frequency of the respective acoustic resonator has an inverse dependence on a thickness of the dielectric layer.

9. The device of claim 8 further comprising a substrate, wherein portions of the at least one piezoelectric layer form a plurality of diaphragms that are each over respective cavities in the substrate, and wherein the interleaved fingers of each of the plurality of IDTs are on a respective diaphragm of the plurality of diaphragms.

10. The device of claim 9 , wherein a direction of acoustic energy flow of each of the respective primary shear acoustic modes is substantially orthogonal to front and back surfaces of the at least one piezoelectric layer.

11. The device of claim 10 , wherein:
a z-axis of the at least one piezoelectric layer is normal to the front and back surfaces, and
each of the plurality of IDTs is oriented such that the respective interleaved fingers of the IDT are parallel to an x-axis of the at least one piezoelectric layer.

12. The device of claim 8 , wherein the at least one piezoelectric layer is one of lithium niobate and lithium tantalate.

13. The device of claim 8 , wherein the dielectric layer is silicon dioxide or silicon nitride.

14. The device of claim 1 , wherein the dielectric layer has a thickness that is greater than 0 nm and less than or equal to 500 nm.

15. A method of fabricating an acoustic resonator device, the method comprising:
forming an interdigital transducer (IDT) comprising interleaved fingers at a piezoelectric layer, the piezoelectric layer and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer; and
forming a dielectric layer on the piezoelectric layer between the interleaved fingers of the IDT, wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the dielectric layer.

16. The method of claim 15 , wherein a direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to front and back surfaces of the piezoelectric layer.

17. The method of claim 16 , wherein a z-axis of the piezoelectric layer is normal to the front and back surfaces, and the IDT is oriented such that the interleaved fingers of the IDT are parallel to an x-axis of the piezoelectric layer.

18. The device of claim 8 , wherein the dielectric layer is over and between the fingers of the at least one IDT of the plurality of IDTs.

19. An acoustic resonator device comprising:
a piezoelectric layer;
an interdigital transducer (IDT) comprising interleaved fingers at the piezoelectric layer, the piezoelectric layer and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer; and
a dielectric layer on the piezoelectric layer and configured such that a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the-dielectric layer.

20. The acoustic resonator device of claim 19 , wherein the dielectric layer is disposed over and between the interleaved fingers of the IDT.

Assignees

• Murata Manufacturing Co

Inventors

• Plesski Viktor
• Yandrapalli Soumya
• Hammond Robert B
• Garcia Bryant
• Turner Patrick
• John Jesson
• Yantchev Ventsislav

Classifications

• H03H9/176

  consisting of ceramic material (H03H9/177, H03H9/178 take precedence) · CPC title

• H03H2003/023

  the resonators or networks being of the membrane type · CPC title

• H03H9/568

  consisting of a ladder configuration · CPC title

• H03H9/564

  implemented with thin-film techniques · CPC title

• H03H9/562

  comprising a ceramic piezoelectric layer · CPC title