Photoelectric detection substrate and manufacturing method thereof, and photoelectric detection device

Patent metadata

Field	Value
Publication number	US-12080812-B2
Application number	US-202117432422-A
Country	US
Kind code	B2
Filing date	Feb 22, 2021
Priority date	Mar 20, 2020
Publication date	Sep 3, 2024
Grant date	Sep 3, 2024

Abstract

A photoelectric detection substrate and a manufacturing method thereof, and a photoelectric detection device are provided. The photoelectric detection substrate includes: a base substrate and a semiconductor layer arranged on the base substrate, wherein the semiconductor layer is configured to convert an optical signal into an electrical signal.

First claim

What is claimed is:

1. A photoelectric detection substrate, comprising:
a base substrate;
a semiconductor layer arranged on the base substrate,
wherein the semiconductor layer is configured to convert an optical signal into an electrical signal;
an interdigital electrode arranged at a side of the semiconductor layer distal to the base substrate;
a flat layer arranged at a side of the interdigital electrode distal to the base substrate; and
a switching transistor arranged at a side of the flat layer distal to the base substrate, wherein the switching transistor is connected to the interdigital electrode through a via hole penetrating through the flat layer;
wherein the interdigital electrode comprises comb-shaped sensing sub-electrodes and comb-shaped biasing sub-electrodes, and the sensing sub-electrodes and the biasing sub-electrodes are arranged alternately;
wherein a side surface of the semiconductor layer distal to the base substrate is provided with a plurality of grooves in which the sensing sub-electrodes and the biasing sub-electrodes are arranged.

2. The photoelectric detection substrate according to claim 1 , wherein a light shielding metal layer is arranged on the side surface of the semiconductor layer distal to the base substrate, and an orthographic projection of the light shielding metal layer on the base substrate does not overlap with an orthographic projection of the plurality groove on the base substrate.

3. The photoelectric detection substrate according to claim 2 , wherein the light shielding metal layer and the interdigital electrode are made of a same material.

4. The photoelectric detection substrate according to claim 2 , further comprising: a plurality of reading signal lines and a plurality of gating signal lines, wherein the reading signal lines and the gating signal lines are intersected to define a plurality of detection units;
a respective one of the sensing sub-electrodes and a respective one of the switching transistors are arranged in each of the detection units; and
a gate electrode of the switching transistor is electrically connected to the plurality of gating signal lines, a first electrode of the switching transistor is electrically connected to the sensing sub-electrodes, and a second electrode of the switching transistor is electrically connected to the plurality of reading signal lines.

5. The photoelectric detection substrate according to claim 4 , wherein an orthographic projection of an active layer of the switching transistor on the base substrate is within the orthographic projection of the light shielding metal layer on the base substrate.

6. The photoelectric detection substrate according to claim 1 , further comprising:
a first insulating layer arranged between the interdigital electrode and the semiconductor layer;
a second insulating layer arranged between the base substrate and the semiconductor layer.

7. The photoelectric detection substrate according to claim 1 , wherein the interdigital electrode is in direct physical contact with the semiconductor layer.

8. The photoelectric detection substrate according to claim 1 , wherein the interdigital electrode has a thickness of 200 nm to 260 nm;
the semiconductor layer has a thickness of 250 nm to 300 nm;
the base substrate is an optical waveguide glass substrate or a flexible substrate.

9. The photoelectric detection substrate according to claim 1 , further comprising: a wavelength conversion layer configured to convert non-visible light into visible light;
wherein the wavelength conversion layer is arranged at a side of the semiconductor layer distal to the interdigital electrode.

10. A photoelectric detection device comprising the photoelectric detection substrate according to claim 1 .

11. A method for manufacturing a photoelectric detection substrate, comprising:
providing a base substrate;
forming a semiconductor layer on the base substrate, wherein the semiconductor layer is configured to convert an optical signal into an electrical signal;
forming an interdigital electrode at a side of the semiconductor layer distal to the base substrate;
forming a flat layer covering the interdigital electrode; and
forming a switching transistor at a side of the flat layer distal to the base substrate, wherein the switching transistor is connected to the interdigital electrode through a via hole penetrating through the flat layer;
wherein the interdigital electrode comprises comb-shaped sensing sub-electrodes and comb-shaped biasing sub-electrodes, the sensing sub-electrodes and the biasing sub-electrodes are arranged alternately,
forming the semiconductor layer on the base substrate comprises: forming a plurality of grooves on a side surface of the semiconductor layer distal to the base substrate,
forming the interdigital electrode at the side of the semiconductor layer distal to the base substrate comprises: forming the sensing sub-electrodes and the biasing sub-electrodes in the plurality of grooves.

12. The method according to claim 11 , further comprising:
forming a light shielding metal layer, wherein the light shielding metal layer is arranged at a side of an active layer of the switching transistor proximate to the base substrate, an orthographic projection of the light shielding metal layer on the base substrate does not overlap with an orthographic projection of the plurality of grooves on the base substrate; and an orthographic projection of the active layer on the base substrate is within the orthographic projection of the light shielding metal layer on the base substrate.

13. The method according to claim 12 , wherein the light shielding metal layer and the interdigital electrode are formed by a single patterning process.

14. The method according to claim 11 , further comprising:
forming a first insulating layer located between the interdigital electrode and the semiconductor layer;
forming a third insulating layer located between the flat layer and the switching transistor.

15. The method according to claim 11 , further comprising:
before forming the semiconductor layer,
forming a wavelength conversion layer at a side of the semiconductor layer distal to the interdigital electrode, wherein the wavelength conversion layer is configured to convert non-visible light into visible light.

Assignees

• Beijing Boe Technology Dev Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Liang Kui
• Sun tuo
• Zhang Yichi

Classifications

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F19/00

  Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules · CPC title

• H10F77/206

  for devices having potential barriers · CPC title

• H10F39/12

  Image sensors · CPC title

• H10F39/011

  Manufacture or treatment of image sensors covered by group H10F39/12 · CPC title