Method for manufacturing nitride catalyst

Patent metadata

Field	Value
Publication number	US-12077873-B2
Application number	US-202017107034-A
Country	US
Kind code	B2
Filing date	Nov 30, 2020
Priority date	Nov 30, 2018
Publication date	Sep 3, 2024
Grant date	Sep 3, 2024

Abstract

A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing M x Ru y N 2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein M x Ru y Z 2 is cubic crystal system or amorphous.

First claim

What is claimed is:

1. A method for manufacturing nitride catalyst, comprising:
putting a Ru target and an M target into a nitrogen-containing atmosphere, wherein M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn;
providing powers to the Ru target and the M target, respectively; and
providing ions to bombard the Ru target and the M target, to sputtering deposit M x Ru y N 2 on a substrate, wherein 0<x<1.3, 0.7<y<2, and x+y=2,
wherein M x Ru y N 2 is a cubic crystal system or amorphous.

2. The method as claimed in claim 1 , wherein the power provided to the Ru target is 10 W to 200 W, and the power provided to the M target is 10 W to 200 W.

3. The method as claimed in claim 1 , wherein the nitrogen-containing atmosphere has a pressure of 1 mTorr to 30 mTorr.

4. The method as claimed in claim 1 , wherein the nitrogen-containing atmosphere comprises carrier gas, and the nitrogen and the carrier gas have a partial pressure ratio of 0.1 to 10.

5. The method as claimed in claim 1 , wherein the substrate comprises a porous conductive layer.

6. The method as claimed in claim 1 , wherein M is Ni, 0.069<x<1.086, and 0.914<y<1.931.

7. The method as claimed in claim 1 , wherein M is Mn, 0.01<x<0.8, and 1.2<y<1.99.

8. The method as claimed in claim 1 , wherein M x Ru y N 2 has a surface morphology of a tetrahedron or a pyramid.

Assignees

• Ind Tech Res Inst

Inventors

• Lin Kuo-Hsin
• Tsai Li-Duan
• Chao Wen-Hsuan
• Huang Chiu-Ping
• Yang Pin-Hsin
• Huang Hsiao-Chun
• Lin Jiunn-Nan
• Lin Yu-Ming

Classifications

• C25B11/057

  consisting of a single element or compound · CPC title

• C25B11/051

  Electrodes formed of electrocatalysts on a substrate or carrier · CPC title

• C25B9/73

  of the filter-press type · CPC title

• C25B1/04

  by electrolysis of water · CPC title

• C01P2002/76

  by a space-group or by other symmetry indications · CPC title