Metallization of solar cells

US12074233B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12074233-B2
Application numberUS-202117404863-A
CountryUS
Kind codeB2
Filing dateAug 17, 2021
Priority dateDec 20, 2013
Publication dateAug 27, 2024
Grant dateAug 27, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A solar cell, comprising: a first tunnel dielectric layer on a silicon substrate; an emitter region on the first tunnel dielectric layer; a second tunnel dielectric layer on the emitter region; and a conductive contact on the second tunnel dielectric layer, the conductive contact comprising a metal and silicon, and the conductive contact having a lateral width the same as a lateral width of the second tunnel dielectric layer. 2. The solar cell of claim 1 , wherein the emitter region is vertically over the first tunnel dielectric layer, the second tunnel dielectric layer is vertically over the emitter region, and the conductive contact is vertically over the second tunnel dielectric layer. 3. The solar cell of claim 1 , wherein the first tunnel dielectric layer is a first silicon oxide layer, and the second tunnel dielectric layer is a second silicon oxide layer. 4. The solar cell of claim 1 , wherein the second tunnel dielectric layer is a layer selected from the group consisting of a silicon oxide layer, a silicon oxynitride layer, and an aluminum oxide layer. 5. The solar cell of claim 1 , wherein the emitter region comprises polycrystalline silicon. 6. The solar cell of claim 1 , wherein the conductive contact comprises aluminum. 7. The solar cell of claim 1 , wherein the emitter region in an n-type emitter region. 8. The solar cell of claim 1 , wherein the emitter region in a p-type emitter region. 9. A back contact solar cell, comprising: a monocrystalline silicon substrate having a back surface opposite a light-receiving surface; a first silicon oxide layer on the monocrystalline silicon substrate; a polycrystalline silicon layer on the first silicon oxide layer; a second silicon oxide layer on the polycrystalline silicon layer; and a conductive layer on the second silicon oxide layer, the conductive layer comprising a metal and silicon, and the conductive layer having a lateral width the same as a lateral width of the second silicon oxide layer. 10. The solar cell of claim 9 , wherein the polycrystalline silicon layer is vertically over the first silicon oxide layer, the second silicon oxide layer is vertically over the polycrystalline silicon layer, and the conductive layer is vertically over the second silicon oxide layer. 11. The solar cell of claim 9 , wherein the conductive layer comprises aluminum. 12. The solar cell of claim 9 , wherein the polycrystalline silicon layer is an n-type polycrystalline silicon layer. 13. The solar cell of claim 9 , wherein the polycrystalline silicon layer is a p-type polycrystalline silicon layer.

Assignees

Inventors

Classifications

  • for photovoltaic devices or modules · CPC title

  • the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells · CPC title

  • Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side · CPC title

  • H10F77/219Primary

    Arrangements for electrodes of back-contact photovoltaic cells · CPC title

  • Manufacturing or production processes characterised by the final manufactured product · CPC title

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What does patent US12074233B2 cover?
Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. T…
Who is the assignee on this patent?
Maxeon Solar Pte Ltd
What technology area does this patent fall under?
Primary CPC classification H10F77/219. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 27 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).