Display device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-12069934-B2
Application number	US-202117496139-A
Country	US
Kind code	B2
Filing date	Oct 7, 2021
Priority date	Jan 27, 2021
Publication date	Aug 20, 2024
Grant date	Aug 20, 2024

Abstract

A method of manufacturing a display device includes forming a light emitting structure on a substrate and forming a thin film encapsulation layer on the light emitting structure by chemical vapor deposition equipment. The forming the thin film encapsulation layer includes forming a first inorganic layer and performing a first plasma treatment on a first portion of the first inorganic layer which is opposite to a second portion of the first inorganic layer facing the light emitting structure. A first raw material in the forming the first inorganic layer includes hydrogen. A second raw material in the performing the first plasma treatment exclusively consists of hydrogen.

First claim

What is claimed is:

1. A method of manufacturing a display device, the method comprising:
forming a light emitting structure on a substrate; and
forming a thin film encapsulation layer on the light emitting structure by chemical vapor deposition equipment, the forming the thin film encapsulation layer including:
forming a first inorganic layer; and
forming a first-1 inorganic layer and a first-2 inorganic layer disposed on the first-1 inorganic layer by performing a first plasma treatment on a first portion of the first inorganic layer which is opposite to a second portion of the first inorganic layer facing the light emitting structure, and

wherein a first raw material in the forming the first inorganic layer includes hydrogen (H 2 ), and a second raw material in the performing the first plasma treatment exclusively consists of hydrogen, and
the first-2 inorganic layer includes a material identical to a material of the first-1 inorganic layer and has dangling bonds less than dangling bonds of the first-1 inorganic layer.

2. The method of claim 1 , wherein the first raw material further includes at least one of silane (SiH 4 ), ammonia (NH 3 ), nitrous oxide (N 2 O), and nitrogen (N 2 ).

3. The method of claim 1 , wherein the forming the first inorganic layer and the performing the first plasma treatment are carried out while maintaining same power, same pressure, same temperature, and same spacing of the chemical vapor deposition equipment.

4. The method of claim 1 , wherein the performing the first plasma treatment is carried out for about 10 seconds to about 30 seconds.

5. The method of claim 1 ,
the forming the thin film encapsulation layer further includes forming a second inorganic layer on the first inorganic layer,
wherein a third raw material in the forming the second inorganic layer is identical to the first raw material.

6. The method of claim 5 ,
the forming the thin film encapsulation layer further includes performing a second plasma treatment on a first portion of the second inorganic layer which is opposite to a second portion of the second inorganic layer facing the light emitting structure,
wherein a fourth raw material in performing the second plasma treatment exclusively consists of hydrogen.

7. The method of claim 6 , wherein the forming the second inorganic layer and the performing the second plasma treatment are carried out while maintaining same power, same pressure, same temperature, and same spacing of the chemical vapor deposition equipment.

8. A display device comprising:
a light emitting structure disposed on a substrate; and
a thin film encapsulation layer disposed on the light emitting structure and including:
a first inorganic layer;
an organic layer disposed on the first inorganic layer; and
a second inorganic layer disposed on the organic layer and including:
a first-1 inorganic layer including at least one of silicon nitride and silicon oxynitride; and
a first-2 inorganic layer disposed on the first-1 inorganic layer, including a material identical to a material of the first-1 inorganic layer, and having dangling bonds less than dangling bonds of the first-1 inorganic layer.

9. The display device of claim 8 , wherein a number of hydrogen atoms included in the first-2 inorganic layer is greater than a number of hydrogen atoms included in the first-1 inorganic layer.

10. The display device of claim 8 , wherein the second inorganic layer has a thickness of about 1200 nanometers or less.

11. The display device of claim 8 , wherein the second inorganic layer has a thickness in a range of about 500 nanometers to about 700 nanometers.

12. The display device of claim 8 , wherein the second inorganic layer has a thickness smaller than a thickness of the first inorganic layer.

13. The display device of claim 8 , wherein the first-2 inorganic layer has a thickness in a range of about 5 nanometers to about 8 nanometers.

14. The display device of claim 8 , wherein the second inorganic layer is not oxidized under a temperature of about 85 degrees Celsius and a humidity of about 85 percent for about 500 hours.

15. The display device of claim 8 , wherein the second inorganic layer has a refractive index identical to a refractive index of the first-1 inorganic layer.

16. The display device of claim 8 ,
the second inorganic layer further includes a second-1 inorganic layer disposed on the first-2 inorganic layer and including a material identical to a material of the first-1 inorganic layer.

17. The display device of claim 16 ,
the second inorganic layer further includes a second-2 inorganic layer disposed on the second-1 inorganic layer, including a material identical to a material of the second-1 inorganic layer, and having dangling bonds less than dangling bonds of the second-1 inorganic layer.

18. The display device of claim 17 , wherein the second inorganic layer has a thickness in a range of about 500 nanometers to about 700 nanometers and the second-2 inorganic layer has a thickness in a range of about 5 nanometers to about 8 nanometers.

19. The display device of claim 8 , wherein the first inorganic layer includes:
a third-1 inorganic layer including at least one of silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), silicon oxide (SiO x ), aluminum oxide (AlO x ), and titanium oxide (TiO x ); and
a third-2 inorganic layer disposed on the third-1 inorganic layer, including a material identical to a material of the third-1 inorganic layer, and having dangling bonds less than dangling bonds of the third-1 inorganic layer.

20. The display device of claim 19 , wherein the third-1 inorganic layer is not oxidized under a temperature of about 85 degrees Celsius and a humidity of about 85 percent for about 500 hours, and the third-2 inorganic layer is provided by a hydrogen plasma treatment on the first inorganic layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Jung Woosuk
• Ha Jaeheung
• Kim Wonjong
• Kim Jongwoo
• Park Heeyeon
• Song Changyeong
• Yang Hyein
• Ju Yongchan

Classifications

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• H10K71/00 Primary

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K59/8731 Primary

  multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers · CPC title

• H10K2102/351

  Thickness · CPC title

• H10K2102/00

  Constructional details relating to the organic devices covered by this subclass · CPC title