Intensity-Normalized Image Sensor
US-2021075982-A1 · Mar 11, 2021 · US
US12068427B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12068427-B2 |
| Application number | US-202318307874-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2023 |
| Priority date | Sep 14, 2020 |
| Publication date | Aug 20, 2024 |
| Grant date | Aug 20, 2024 |
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Official abstract text for this publication.
A package includes: a bottom portion having a mounting surface; and a lateral wall portion having a top surface and including: a lateral wall having a rectangular outer shape in a top view and surrounding the mounting surface, and a stepped portion formed along the lateral wall below the top surface. In the top view, the stepped portion includes a wide portion and a narrow portion that are two regions having different widths. The narrow portion is formed on a portion along a one side of an entire circumference of the lateral wall.
Opening claim text (preview).
What is claimed is: 1. A light emitting device comprising: a package comprising: a bottom portion having a mounting surface; and a lateral wall portion having a top surface and comprising: a lateral wall having a rectangular outer shape in a top view and surrounding the mounting surface, and a stepped portion formed along the lateral wall below the top surface; and a semiconductor laser element arranged on the mounting surface; and an optical member, wherein: in the top view: the stepped portion includes a wide portion and a narrow portion that are two regions having different widths, the narrow portion is formed on a portion along a one side of an entire circumference of the lateral wall, and the optical member is disposed between the semiconductor laser element and the narrow portion. 2. The light emitting device according to claim 1 , wherein the stepped portion is formed along the entire circumference of the lateral wall. 3. The light emitting device according to claim 1 , wherein the wide portion is formed on a portion along three sides of the entire circumference of the lateral wall. 4. The light emitting device according to claim 1 , further comprising one or more wiring regions provided on a top surface of the stepped portion, wherein no wiring regions are provided on a top surface of the narrow portion of the top surface of the stepped portion. 5. The light emitting device according to claim 4 , further comprising a first wire electrically connecting the semiconductor laser element to the one or more wiring regions, wherein, in the top view, the first wire is joined to the wiring regions provided on a top surface of the wide portion formed at a position at which the wide portion faces the narrow portion. 6. The light emitting device according to claim 1 , wherein the narrow portion is formed at a position at which the narrow portion faces a light emitting surface of the semiconductor laser element. 7. The light emitting device according to claim 1 , further comprising a first wire electrically connecting the semiconductor laser element to the wiring regions, wherein, in the top view, the first wire is joined to the wiring regions provided on a top surface of the wide portion formed along a side in contact with a side along which the narrow portion is formed. 8. The light emitting device according to claim 1 , further comprising a second wire electrically connecting the optical member to the wiring regions, wherein, in the top view, the second wire is joined to the wiring regions provided on a top surface of the wide portion formed along a side in contact with a side along which the narrow portion is formed. 9. The light emitting device according to claim 1 , further comprising: a first wire electrically connecting the semiconductor laser element to the wiring regions; and a second wire electrically connecting the optical member to the wiring regions, wherein: in the top view, the first wire is joined to the wiring regions provided on a top surface of the wide portion formed at a position at which the wide portion faces the narrow portion, and in the top view, the second wire is joined to the wiring regions provided on a top surface of the wide portion formed along a side in contact with a side along which the narrow portion is formed. 10. The light emitting device according to claim 1 , further comprising: a first wire electrically connecting the semiconductor laser element to the wiring regions; and a second wire electrically connecting the optical member to the wiring regions, wherein: in the top view, the first wire is joined to the wiring regions provided on a top surface of the wide portion formed at a position at which the wide portion faces the narrow portion, in the top view, the first wire is joined to the wiring regions provided on a top surface of the wide portion formed along a side in contact with a side along which the narrow portion is formed, and in the top view, the second wire is joined to the wiring regions provided on a top surface of the wide portion formed along a side in contact with a side on which the narrow portion is formed. 11. The light emitting device according to claim 10 , wherein the wiring regions to which the first wire is joined and the wiring regions to which the second wire is joined are provided on the wide portion formed along a same side.
Package configurations · CPC title
Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title
directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title
for filtering or shielding light, e.g. multicolour filters for photodetectors · CPC title
Encapsulations or containers (for photovoltaic modules H10F19/80) · CPC title
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