Highly selective ion beam etch hard mask for sub 60nm MRAM devices
US-10388862-B1 · Aug 20, 2019 · US
Semiconductor device
US12068384B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12068384-B2 |
| Application number | US-202117315680-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 10, 2021 |
| Priority date | Nov 30, 2018 |
| Publication date | Aug 20, 2024 |
| Grant date | Aug 20, 2024 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
Gate fingers extending symmetrically from both sides of gate connecting portions, drain electrodes adjacent to both the gate fingers extending from both the sides of the gate connecting portions, and source electrodes respectively adjacent to the gate fingers extending from both the sides of the gate connecting portions are included. Gate air bridges connect the gate connecting portions and a gate routing line while straddling the source electrodes.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a semiconductor layer disposed on a substrate; at least one gate connecting portion disposed on the semiconductor layer; a plurality of gate fingers extending symmetrically from both sides of the at least one gate connecting portion; a drain electrode adjacent to both one of the plurality of gate fingers which extends from a first side of the at least one gate connecting portion and another one of the plurality of gate fingers which extends from a second side of the at least one gate connecting portion, the second side being opposite to the first side; a plurality of source electrodes respectively adjacent to a gate finger among the plurality of gate fingers extending from the first side of the at least one gate connecting portion and another gate finger among the plurality of gate fingers extending from the second side of the at least one gate connecting portion; a gate routing line via which electric power to be inputted to the plurality of gate fingers is transmitted; a gate air bridge connecting the at least one gate connecting portion and the gate routing line while straddling a source electrode among the plurality of source electrodes adjacent to said another gate finger extending from the second side of the at least one gate connecting portion; and a metal layer disposed under each of the plurality of source electrodes and having etching resistance higher than etching resistance of the plurality of source electrodes, wherein the metal layer comprises a first length in a longitudinal direction of the metal layer, and each of the source electrodes comprises a second length in a longitudinal direction of the source electrode, and the first length of the metal layer is less than the second length of each of the source electrodes. 2. The semiconductor device according to claim 1 further comprising an insulation film disposed under the gate air bridge.
Assignees
Inventors
Classifications
at high-frequency [HF] or radio frequency [RF] · CPC title
Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes · CPC title
- H10W20/483Primary
Interconnections over air gaps, e.g. air bridges · CPC title
for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673) · CPC title
Top-view geometrical layouts of the regions or the junctions · CPC title
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- What does patent US12068384B2 cover?
- Gate fingers extending symmetrically from both sides of gate connecting portions, drain electrodes adjacent to both the gate fingers extending from both the sides of the gate connecting portions, and source electrodes respectively adjacent to the gate fingers extending from both the sides of the gate connecting portions are included. Gate air bridges connect the gate connecting portions and a g…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W20/483. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 20 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).