Semiconductor device

Patent metadata

Field	Value
Publication number	US-12068311-B2
Application number	US-202217970368-A
Country	US
Kind code	B2
Filing date	Oct 20, 2022
Priority date	Mar 19, 2020
Publication date	Aug 20, 2024
Grant date	Aug 20, 2024

Abstract

A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor part;
a first electrode provided on a back surface of the semiconductor part;
a second electrode provided on a front surface of the semiconductor part; and
a control electrode provided between the first electrode and the second electrode, the control electrode extending into the semiconductor part from the front surface side, the control electrode being electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film,
the semiconductor part including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the second conductivity type,
the first semiconductor layer extending between the first and second electrodes, the control electrode extending into the first semiconductor layer from the front surface side of the semiconductor part,
the second semiconductor layer being provided between the first semiconductor layer and the second electrode, the second semiconductor layer being connected to the second electrode,
the third semiconductor layer being provided between the second semiconductor layer and the control electrode, the third semiconductor layer contacting the first insulating film and the second semiconductor layer, the third semiconductor layer including a second-conductivity-type impurity with a higher concentration than a concentration of a second-conductivity-type impurity in the second semiconductor layer, the third semiconductor layer contacting the second electrode and being electrically connected to the second electrode,
the third semiconductor layer having a first length in a first direction directed from the first electrode toward the second electrode, the third semiconductor layer having a first layer thickness in a second direction directed from the second semiconductor layer toward the control electrode, the first length being greater than the first layer thickness, and
an interface between the first semiconductor layer and the third semiconductor layer being at a same level as an interface between the first semiconductor layer and the second semiconductor layer in the first direction.

2. The device according to claim 1 , wherein
the second semiconductor layer has a first width in the second direction, the first layer thickness being less than the first width.

3. The device according to claim 1 , wherein the third semiconductor layer contacts the first semiconductor layer.

4. The device according to claim 1 , wherein
the second semiconductor layer includes a plurality of contact portions contacting the second electrode, the plurality of contact portions being arranged in an extension direction of the control electrode along the front surface of the semiconductor part,
the third semiconductor layer further includes a contact portion contacting the second electrode, and
the contact portion of the third semiconductor layer is provided between the adjacent contact portions of the plurality of contact portions of the second semiconductor layer.

5. The device according to claim 1 , wherein
the second semiconductor layer includes a plurality of contact portions arranged in an extension direction of the control electrode along the front surface of the semiconductor part,
the third semiconductor layer includes a first portion and a second portion, the first portion being provided between the second semiconductor layer and the first insulating film, the second portion being provided between the adjacent contact portions of the plurality of contact portions of the second semiconductor layer, and
the second electrode contacts the plurality of contact portions of the second semiconductor layer and the first and second portions of the third semiconductor layer.

6. The device according to claim 1 , wherein
the second semiconductor layer has a first thickness in a first direction, the first direction being from the first electrode toward the second electrode, and
the third semiconductor layer has a first length in the first direction, the first thickness being substantially equal to the first length.

7. The device according to claim 1 , wherein
the third semiconductor layer includes a portion extending along the first insulating film, the portion of the third semiconductor layer being provided between the first semiconductor layer and the first insulating film.

8. The device according to claim 1 , wherein
the semiconductor part further includes a fourth semiconductor layer of the first conductivity type, the fourth semiconductor layer being provided between the first semiconductor layer and the first electrode, the fourth semiconductor layer including a first-conductivity-type impurity with a higher concentration than a concentration of a first-conductivity-type impurity in the first semiconductor layer.

9. The device according to claim 1 , wherein
the semiconductor part further includes a fifth semiconductor layer of the second conductivity type provided between the first semiconductor layer and the first insulating film, the fifth semiconductor being provided between the control electrode and the first electrode.

10. The device according to claim 9 , wherein
the fifth semiconductor layer is connected to the second electrode via an electrical resistance.

11. The device according to claim 1 , further comprising an interconnect provided on the second insulating film, the interconnect being provided apart from the second electrode, the interconnect including a connection portion which extends through a contact hole which is provided in the second insulating film, and the interconnect being electrically connected to the control electrode through the connection portion.

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Itokazu Hiroko
• Matsudai Tomoko
• Iwakaji Yoko
• Motai Takako

Classifications

• H10D62/128

  Anode regions of diodes · CPC title

• H10D62/127

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title

• H10D62/108

  having localised breakdown regions, e.g. built-in avalanching regions  (in self-protected thyristors H10D18/211) · CPC title

• H10D12/481 Primary

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title

• H10D8/422

  PN diodes having the PN junctions in mesas · CPC title