Structure of resistor device and system for measuring resistance of same

US12068092B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12068092-B2
Application numberUS-202217716504-A
CountryUS
Kind codeB2
Filing dateApr 8, 2022
Priority dateApr 8, 2022
Publication dateAug 20, 2024
Grant dateAug 20, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A resistor structure includes a resistor body; and a first electrode structure disposed at and being in electric contact with a first end of the resistor body, and a second electrode structure disposed at and being in electric contact with a second end opposite to the first end of the resistor body. Each of the first electrode structure and the second electrode structure has at least one conductive protrusion. The at least one conductive protrusion of the first electrode structure and the at least one conductive protrusion of the second electrode structure both serve as voltage-sensing terminals for electric connection to an external voltage measurement device, or both serve as current-sensing terminals for electric connection to a current measurement device.

First claim

Opening claim text (preview).

What is claimed is: 1. A resistor structure, comprising: a resistor body; and a first electrode structure being a piece of conductive material disposed at and being in electric contact with a first end of the resistor body, and a second electrode structure being a piece of conductive material disposed at and being in electric contact with a second end opposite to the first end of the resistor body, the first electrode structure comprising first and second conductive protrusions having a clearance from each other, and the second electrode structure comprising third and fourth conductive protrusions having a clearance from each other; wherein one of the first and second conductive protrusions of the first electrode structure and one of the third and fourth conductive protrusions of the second electrode structure serve as voltage-sensing terminals for electric connection to an external voltage measurement device, or serve as current-sensing terminals for electric connection to an external current measurement device. 2. The resistor structure according to claim 1 , wherein each of the first conductive protrusion and the third conductive protrusion serves as a voltage-sensing terminal for electric connection to an external voltage measurement device, and each of the second conductive protrusion and the fourth conductive protrusion serves as a current-sensing terminal for electric connection to an external current measurement device. 3. The resistor structure according to claim 1 , wherein respective topmost points of the first, second, third and fourth conductive protrusions are all coplanar. 4. The resistor structure according to claim 1 , wherein a clearance between the first conductive protrusion of the first electrode structure and the third conductive protrusion of the second electrode structure is ranged between 450 μm and 570 μm, and a clearance between the second conductive protrusion of the first electrode structure and the fourth conductive protrusion of the second electrode structure is ranged between 450 μm and 570 μm. 5. The resistor structure according to claim 1 , wherein the clearance between the first and second conductive protrusions of the first electrode structure is not less than 100 μm, and the clearance between the third and fourth conductive protrusions of the second electrode structure is not less than 100 μm. 6. The resistor structure according to claim 1 , wherein at least one diameter of the first, second, third, and fourth conductive protrusions is ranged between 10 μm and 40 μm. 7. The resistor structure according to claim 1 , wherein at least one thickness of the first, second, third, and fourth conductive protrusions is ranged between 10 μm and 50 μm. 8. The resistor structure according to claim 1 , wherein each of the first, second, third, and fourth conductive protrusions includes a flat top surface. 9. A resistor structure, comprising: a substrate; a resistance layer disposed on the substrate; a protective layer overlying the resistance layer; and a first electrode structure being a piece of conductive material disposed at and being in electric contact with a first end of the resistance layer, and a second electrode structure being a piece of conductive material disposed at and being in electric contact with a second end opposite to the first end of the resistance layer, the first electrode structure comprising first and second conductive protrusions having a clearance from each other, and the second electrode structure comprising third and fourth conductive protrusions having a clearance from each other, wherein each of the first, second, third and fourth conductive protrusions has a top surface extending over that of the protective layer. 10. The resistor structure according to claim 9 , wherein one of the conductive protrusions of the first electrode structure and one of the conductive protrusions of the second electrode structure serve as voltage-sensing terminals for electric connection to an external voltage measurement device, or serve as current-sensing terminals for electric connection to an external current measurement device. 11. The resistor structure according to claim 9 , wherein each of the first conductive protrusion and the third conductive protrusion serves as a voltage-sensing terminal for electric connection to an external voltage measurement device, and each of the second conductive protrusion and the fourth conductive protrusion serves as a current-sensing terminal for electric connection to an external current measurement device. 12. The resistor structure according to claim 9 , wherein respective topmost points of the first, second, third and fourth conductive protrusions are all coplanar. 13. The resistor structure according to claim 9 , wherein a clearance between the first conductive protrusion of the first electrode structure and the third conductive protrusion of the second electrode structure is ranged between 450 μm and 570 μm, and a clearance between the second conductive protrusion of the first electrode structure and the fourth conductive protrusion of the second electrode structure is ranged between 450 μm and 570 μm. 14. The resistor structure according to claim 9 wherein the clearance between the first and second conductive protrusions of the first electrode structure is not less than 100 μm, and the clearance between the third and fourth conductive protrusions of the second electrode structure is not less than 100 μm. 15. The resistor structure according to claim 9 , wherein at least one diameter of the first, second, third, and fourth conductive protrusions is ranged between 10 μm and 40 μm. 16. The resistor structure according to claim 9 , wherein at least one thickness of the first, second, third, and fourth conductive protrusions is ranged between 10 μm and 50 μm. 17. The resistor structure according to claim 9 , wherein each of the first, second, third, and fourth conductive protrusions includes a flat top surface. 18. A system for measuring a resistance of a resistor device, the resistor device including a resistor body, a first electrode structure in electric contact with a first end of the resistor body, and a second electrode structure in electric contact with a second end opposite to the first end of the resistor body, wherein each of the first electrode structure and the second electrode structure is a piece of conductive material and has a first set of conductive protrusion and a second set of conductive protrusion, the conductive protrusions of the first set are separated from each other, and the conductive protrusions of the second set are separated from each other, and the system comprising: a fixture for measurement including four pads for electric contact with the first set of conductive protrusion and the second set of conductive protrusion of the first electrode structure and the first set of conductive protrusion and the second set of conductive protrusion of the second electrode structure, respectively, wherein each of the four pads has an area larger than an area of the first or second set of conductive protrusion in electric contact therewith; a power device configured to provide a power; a voltage measurement device electrically connected to the power device, the first set of conductive protrusion of the first electrode structure, and the first set of conductive protrusion of the second electrode structure, and configured to measure a voltage value between the first set of conductive protrusions of the first electrode structure and the second electrode structure under prov

Assignees

Inventors

Classifications

  • Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts (resistors in general H01C; microwave or radiowave terminations H01P1/26; coupling devices H01R) · CPC title

  • Arrangements for measuring currents or voltages or for indicating presence or sign thereof (G01R5/00 takes precedence; for measuring bioelectric currents or voltages A61B5/24) · CPC title

  • Structural combinations of resistors · CPC title

  • Measuring resistance by measuring current or voltage obtained from a reference source (G01R27/16, G01R27/20, G01R27/22 take precedence) · CPC title

  • Thick film varistors · CPC title

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What does patent US12068092B2 cover?
A resistor structure includes a resistor body; and a first electrode structure disposed at and being in electric contact with a first end of the resistor body, and a second electrode structure disposed at and being in electric contact with a second end opposite to the first end of the resistor body. Each of the first electrode structure and the second electrode structure has at least one conduc…
Who is the assignee on this patent?
Cyntec Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01C1/148. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 20 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).