US12065758B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12065758-B2 |
| Application number | US-202017436304-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 3, 2020 |
| Priority date | Mar 5, 2019 |
| Publication date | Aug 20, 2024 |
| Grant date | Aug 20, 2024 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An apparatus for producing an SiC substrate, by which an SiC substrate having a thin base substrate layer is able to be produced, while suppressing deformation or breakage, includes a main container which is capable of containing an SiC base substrate, and which produces a vapor pressure of a vapor-phase species containing elemental Si and a vapor-phase species containing elemental C within the internal space by means of heating; and a heating furnace which contains the main container and heats the main container so as to form a temperature gradient, while producing a vapor pressure of a vapor-phase species containing elemental Si within the internal space. The main container has a growth space in which a growth layer is formed on one surface of the SiC base substrate, and an etching space in which the other surface of the SiC base substrate is etched.
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a SiC substrate, wherein a growth process of forming a growth layer on one surface of a SiC base substrate and an etching process of etching another surface of the SiC base substrate, where the one surface of the SiC base substrate is on an opposite side of the another surface of the SiC base substrate, are simultaneously performed, wherein in the growth process and the etching process, the SiC base substrate is accommodated inside a main container that generates vapor pressure of a gaseous species containing a Si element and a gaseous species containing a C element in an internal space, and the main container is heated to form a temperature gradient, thereby transporting the gaseous species containing the Si element and the gaseous species containing the C element from the main container to the one surface of the SiC base substrate using the temperature gradient as a driving force to form a growth layer on the one surface of the SiC base substrate and transporting the gaseous species containing the Si element and the gaseous species containing the C element from the another surface of the SiC base substrate to the main container using the temperature gradient as a driving force to etch the another surface of the SiC base substrate. 2. The method for manufacturing a SiC substrate according to claim 1 , wherein, in the growth process and the etching process, the temperature gradient is formed under an environment of vapor pressure of the gaseous species containing Si element. 3. The method for manufacturing a SiC substrate according to claim 1 , wherein, in the growth process, the growth layer is formed by making the SiC base substrate arranged on a low temperature side of the temperature gradient face a portion of the main container arranged on a high temperature side of the temperature gradient. 4. The method for manufacturing a SiC substrate according to claim 1 , wherein, in the etching process, the SiC base substrate arranged on the high temperature side of the temperature gradient and a portion of the main container arranged on the low temperature side of the temperature gradient are etched while facing each other. 5. The method for manufacturing a SiC substrate according to claim 1 , wherein, in the growth process, a doping concentration of the growth layer is made the same as a doping concentration of the SiC base substrate. 6. The method for manufacturing a SiC substrate according to claim 1 , wherein, in the growth process, a doping concentration of the growth layer is made lower than a doping concentration of the SiC base substrate. 7. The method for manufacturing a SiC substrate according to claim 1 , wherein, in the growth process, a doping concentration of the growth layer is made higher than a doping concentration of the SiC base substrate. 8. The method for manufacturing a SiC substrate according to claim 1 , wherein the etching process and the growth process are processes of arranging the SiC substrate in a space in which air is exhausted through an environment of vapor pressure of a gaseous species containing Si element and heating the SiC substrate. 9. The SiC substrate manufactured by the method according to claim 1 .
into crystalline silicon carbide · CPC title
of electrically active species · CPC title
Conductivity type · CPC title
Silicon carbide · CPC title
Crystal orientations · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.