Qw-qwd led with suppressed auger recombination
US-2021005779-A1 · Jan 7, 2021 · US
Light-emitting or light-absorbing component
US12065601B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12065601-B2 |
| Application number | US-202017431356-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 18, 2020 |
| Priority date | Feb 18, 2019 |
| Publication date | Aug 20, 2024 |
| Grant date | Aug 20, 2024 |
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- Title
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Abstract
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The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si 1−x Ge x compound material, said Hex-Si 1−x Ge x compound material having a direct band gap for emitting light. The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S 1−x Ge x compound material, said Hex-Si 1−x Ge x compound material having a direct band gap for absorbing light.
First claim
Opening claim text (preview).
The invention claimed is: 1. A light-emitting component comprising a light-emitting section comprising a hexagonal crystal structure Si 1−x Ge x compound material, the hexagonal crystal structure Si 1−x Ge x compound material having a direct band gap for emitting light, wherein the hexagonal crystal structure Si 1−x Ge x compound material is structured to emit light with a B-coefficient for radiative emission of 0.7×10 −10 cm 3 /s<B rad <11×10 −10 cm 3 /s at 300K. 2. The light-emitting component according to claim 1 , wherein the hexagonal crystal structure Si 1−x Ge x compound material is structured to emit light with a B-coefficient for radiative emission of 0.7×10 −10 cm 3 /s<B rad <8.3×10 −10 cm 3 /s at 300 K. 3. The light-emitting component according to claim 1 , wherein the hexagonal crystal structure Si 1−x Ge x compound material is structured to emit light between 1.8 μm for x=0.65 and 3.5 μm for x=1.0. 4. The light-emitting component according to claim 1 , wherein the hexagonal crystal structure Si 1−x Ge x compound material comprises strained quantum well structures of a different composition of the hexagonal Si 1−x Ge x compound material structured to emit light between 1.5 μm and 7.0 μm. 5. The light-emitting component according to claim 1 , wherein the hexagonal crystal structure Si 1−x Ge x compound material exhibits direct band gap emission with a sub-nanosecond recombination lifetime. 6. The light-emitting component according to claim 1 , wherein the hexagonal crystal structure Si 1−x Ge x compound material exhibits a linear dependence of the photoluminescence intensity versus the excitation power. 7. The light-emitting component according to claim 1 , wherein x of the hexagonal crystal structure Si x Ge 1−x compound material is defined with 0.2<x<1.0, or with 0.6<x<1.0, or with 0.2<x<0.99, or with 0.2<x<0.9, or with 0.6<x<0.9, or with 0.6<x<0.99. 8. The light-emitting component according to claim 1 , comprising a monolithic structure including a Cub-Si substrate provided with the hexagonal crystal structure Si 1−x Ge x compound material as the light-emitting section. 9. A light-absorbing component comprising a light-absorbing section including a hexagonal crystal structure Si 1−x Ge x compound material having a direct band gap for absorbing light. 10. The light-absorbing component according to claim 9 , wherein x of the hexagonal crystal structure Si x Ge 1−x compound material is defined with 0.2<x<1.0, or with 0.6<x<1.0, or with 0.2<x<0.99, or with 0.2<x<0.9, or with 0.6<x<0.9, or with 0.6<x<0.99. 11. The light-absorbing component according to claim 9 , comprising a monolithic structure including a Cub-Si substrate provided with the hexagonal crystal structure Si 1−x Ge x compound material as the light-absorbing section.
Assignees
Inventors
Classifications
comprising at least two Group IV elements, e.g. SiGe · CPC title
comprising only Group IV materials · CPC title
within the light-emitting regions, e.g. having quantum confinement structures · CPC title
- H10H20/826Primary
comprising only Group IV materials · CPC title
within the light-emitting regions · CPC title
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- What does patent US12065601B2 cover?
- The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si 1−x Ge x compound material, said Hex-Si 1−x Ge x compound material having a direct band gap for emitting light. The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S 1−x Ge x compound material, said Hex-Si 1−x Ge …
- Who is the assignee on this patent?
- Univ Eindhoven Tech
- What technology area does this patent fall under?
- Primary CPC classification H10H20/826. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 20 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).