Semiconductor laser diode

Patent metadata

Field	Value
Publication number	US-12062887-B2
Application number	US-202318322661-A
Country	US
Kind code	B2
Filing date	May 24, 2023
Priority date	Jun 19, 2017
Publication date	Aug 13, 2024
Grant date	Aug 13, 2024

Abstract

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

First claim

What is claimed is:

1. A semiconductor laser diode comprising a semiconductor layer sequence having an active layer having a main extension plane and configured, in operation, to generate light in an active region and emit light via a light-outcoupling surface,
wherein
the active region extends from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane,
the semiconductor layer sequence has a surface region on which a first cladding layer is applied in direct contact, p 1 the first cladding layer comprises a transparent material from a material system different from the semiconductor layer sequence,
the first cladding layer is structured and has a first structure, and
the surface region comprises at least one of 1) at least a first surface partial region and at least a second surface partial region immediately adjacent thereto, and the first cladding layer has a first thickness in the first surface partial region and a second thickness in the second surface partial region, the first thickness being greater than the second thickness, and 2) a first material in the first surface partial region and a second material in the second surface partial region, the first and second materials being different from each other.

2. The semiconductor laser diode according to claim 1 , wherein, in operation of the semiconductor laser diode, the light generated in the active region extends into the first cladding layer.

3. The semiconductor laser diode according to claim 1 , wherein the first cladding layer comprises a transparent conductive oxide.

4. The semiconductor laser diode according to claim 1 , wherein the first cladding layer comprises at least two different transparent conductive oxides.

5. The semiconductor laser diode according to claim 4 , wherein the at least two different transparent conductive oxides are deposited in an alternating layer stack on the surface region.

6. The semiconductor laser diode according to claim 1 , wherein
the first cladding layer in the second surface partial region has a void formed by an opening or gap,
a metallic material is applied in the void, and
the metallic material in the void extends to the surface region of the semiconductor layer sequence and is in direct contact with the semiconductor layer sequence.

7. The semiconductor laser diode according to claim 1 , wherein a metallic material is applied onto at least one region of the first cladding layer.

8. The semiconductor laser diode according to claim 7 , wherein the metallic material is formed by at least one of a metallic contact layer or a bonding layer.

9. The semiconductor laser diode according to claim 8 , wherein the metallic contact layer is structured and has a second structure, and the first and second structures are different from each other.

10. The semiconductor laser diode according to claim 1 , wherein the semiconductor layer sequence is based on a III-V compound semiconductor material.

11. The semiconductor laser diode according to claim 1 , wherein the first cladding layer has a void in the second surface partial region, the void being formed by an opening or gap.

12. The semiconductor laser diode according to claim 1 , wherein the first cladding layer comprises a plurality of first regions between which there are second regions, the second regions formed as voids.

13. The semiconductor laser diode according to claim 1 , wherein the first cladding layer comprises a plurality of regions formed as longitudinally or transversely extending stripes.

14. The semiconductor laser diode according to claim 1 , wherein the first cladding layer comprises a plurality of island-shaped regions.

15. The semiconductor laser diode according to claim 1 , wherein the semiconductor layer sequence comprises a ridge waveguide structure having a ridge top side and ridge side surfaces adjacent thereto, and the surface region is formed by the ridge top side.

16. A semiconductor laser diode comprising a semiconductor layer sequence having an active layer having a main extension plane and configured, in operation, to generate light in an active region and emit light via a light-outcoupling surface,
wherein
the active region extends from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane,
the semiconductor layer sequence has a surface region on which a first cladding layer is applied in direct contact,
the first cladding layer comprises a transparent material from a material system different from the semiconductor layer sequence,
the first cladding layer is structured and has a first structure,
the surface region comprises at least one of 1) at least a first surface partial region and at least a second surface partial region immediately adjacent thereto, and the first cladding layer has a first thickness in the first surface partial region and a second thickness in the second surface partial region, the first thickness being greater than the second thickness, and 2) a first material in the first surface partial region and a second material in the second surface partial region, the first and second materials being different from each other,
a metallic material is applied onto at least one region of the first cladding layer, and the metallic material is formed by at least one of a metallic contact layer or a bonding layer.

Assignees

• Osram Oled Gmbh

Inventors

• Gerhard Sven
• Eichler Christoph
• Lell Alfred
• Stojetz Bernhard

Classifications

• H01S2301/16

  Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode · CPC title

• H01S5/32341

  blue laser based on GaN or GaP · CPC title

• H01S5/3211

  characterised by special cladding layers, e.g. details on band-discontinuities · CPC title

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/04253 Primary

  having specific optical properties, e.g. transparent electrodes · CPC title