Semiconductor device

Patent metadata

Field	Value
Publication number	US-12062764-B2
Application number	US-202017420536-A
Country	US
Kind code	B2
Filing date	Jan 6, 2020
Priority date	Jan 16, 2019
Publication date	Aug 13, 2024
Grant date	Aug 13, 2024

Abstract

A semiconductor device that inhibits deterioration of a secondary battery is provided. The semiconductor device includes a secondary battery module and a first circuit. The secondary battery module includes a secondary battery and a sensor. The first circuit includes a variable resistor. The sensor has a function of measuring a temperature of the secondary battery. The first circuit has a function of judging the charge voltage of the secondary battery and outputting a first result; a function of judging the temperature of the secondary battery measured by the sensor and outputting a second result; a function of determining the magnitude of the variable resistor on the basis of the first result and the second result; a function of discharging the charge voltage through the variable resistor; and a function of stopping discharge when the charge voltage reaches a specified voltage.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a secondary battery module; and
a first circuit,
wherein the secondary battery module comprises a secondary battery and a sensor,
wherein the first circuit comprises a variable resistor,
wherein the sensor is configured to measure a temperature of the secondary battery,
wherein the first circuit is configured to judge a charge voltage of the secondary battery and to output a first result,
wherein the first circuit is configured to judge the temperature of the secondary battery measured by the sensor and to output a second result,
wherein the first circuit is configured to determine a magnitude of the variable resistor on the basis of the first result and the second result,
wherein the first circuit is configured to discharge the charge voltage through the variable resistor and to stop discharging when the charge voltage reaches a specified voltage,
wherein a temperature range for the temperature of the secondary battery comprises a first temperature range and a second temperature range higher than the first temperature range,
wherein the first circuit is configured to control an amount of discharge from the secondary battery in the second temperature range,
wherein the amount of discharge from the secondary battery in the second temperature range is larger than an amount of discharge from the secondary battery in the first temperature range,
wherein the first circuit comprises a first memory and a second memory,
wherein the first memory is configured to retain a judgment condition of the temperature of the secondary battery, and
wherein the second memory is configured to retain a judgment condition of the charge voltage of the secondary battery.

2. The semiconductor device according to claim 1 ,
wherein the first memory and the second memory each comprise a transistor and a capacitor, and
wherein the transistor comprises a metal oxide in a semiconductor layer.

3. A semiconductor device comprising:
a secondary battery module; and
a first circuit,
wherein the secondary battery module comprises a secondary battery and a sensor,
wherein the sensor is configured to measure a temperature of the secondary battery,
wherein the first circuit comprises a second circuit and a third circuit,
wherein the second circuit comprises a lookup table, a first comparison circuit, and a second comparison circuit,
wherein the third circuit comprises a discharge control circuit and a variable resistor,
wherein the lookup table comprises a first classification condition for classifying a charge voltage of the secondary battery into a voltage range and a second classification condition for classifying the temperature of the secondary battery into a temperature range,
wherein the first comparison circuit is configured to classify the charge voltage of the secondary battery in accordance with the first classification condition and to output a first result,
wherein the second comparison circuit is configured to classify the temperature of the secondary battery in accordance with the second classification condition and to output a second result,
wherein the discharge control circuit is configured to judge necessity of discharge from the secondary battery on the basis of the first result and the second result and to determine a magnitude of the variable resistor, and
wherein the discharge control circuit is configured to discharge the charge voltage through the variable resistor and to stop discharging when the charge voltage reaches a specified voltage.

4. The semiconductor device according to claim 3 ,
wherein the temperature range is outside an allowable temperature range in charging the secondary battery.

5. The semiconductor device according to claim 3 ,
wherein the temperature range comprises a first temperature range and a second temperature range higher than the first temperature range,
wherein the first circuit is configured to control an amount of discharge from the secondary battery in the second temperature range, and
wherein the amount of discharge from the secondary battery in the second temperature range is larger than an amount of discharge from the secondary battery in the first temperature range.

6. The semiconductor device according to claim 5 ,
wherein the first circuit comprises a first memory and a second memory,
wherein the first memory is configured to retain a judgment condition of the temperature of the secondary battery, and
wherein the second memory is configured to retain a judgment condition of the charge voltage of the secondary battery.

7. The semiconductor device according to claim 6 ,
wherein the first memory and the second memory each comprise a transistor and a capacitor, and
wherein the transistor comprises a metal oxide in a semiconductor layer.

Assignees

• Semiconductor Energy Lab

Inventors

• Tajima Ryota
• Takahashi Kei
• Inoue Hiroki
• Kozuma Munehiro
• Fukutome Takahiro

Classifications

• H02J7/977

  of the battery · CPC title

• H02J7/96

  in response to battery voltage · CPC title

• H02J7/975 Primary

  in response to temperature · CPC title

• H01M10/486

  for measuring temperature · CPC title

• G01R31/367

  Software therefor, e.g. for battery testing using modelling or look-up tables · CPC title