Method for direct patterned growth of atomic layer transition metal dichalcogenides
US-10832906-B2 · Nov 10, 2020 · US
US12053769B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12053769-B2 |
| Application number | US-202218086089-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 21, 2022 |
| Priority date | Mar 11, 2021 |
| Publication date | Aug 6, 2024 |
| Grant date | Aug 6, 2024 |
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Aspects of the present disclosure generally relate to catalyst compositions including metal chalcogenides, processes for producing such catalyst compositions, processes for enhancing catalytic active sites in such catalyst compositions, and uses of such catalyst compositions in, e.g., processes for producing conversion products. In an aspect, a process for forming a catalyst composition is provided. The process includes introducing an electrolyte material and an amphiphile material to a metal chalcogenide to form the catalyst composition. In another aspect, a catalyst composition is provided. The catalyst composition includes a metal chalcogenide, an electrolyte material, and an amphiphile material. Devices for hydrogen evolution reaction are also provided.
Opening claim text (preview).
What is claimed is: 1. A device, comprising: an aqueous electrolyte material; an aqueous amphiphile material; and a multilayer structure, the multilayer structure comprising a metal chalcogenide. 2. The device of claim 1 , wherein the metal chalcogenide is in the form of a film comprising 10 or fewer layers. 3. The device of claim 1 , wherein the metal chalcogenide is in the form of a monolayer film. 4. The device of claim 1 , wherein the metal chalcogenide comprises a density of chalcogen atom vacancies from about 6% to about 30%, as determined by x-ray photoelectron spectroscopy. 5. The device of claim 4 , wherein the density of chalcogen atom vacancies is about 6% to about 17%. 6. The device of claim 1 , wherein: the metal chalcogenide comprises a Group 3 to Group 10 metal of the periodic table of elements and a Group 16 element of the periodic table of elements; the aqueous electrolyte material comprises an acid; the aqueous amphiphile material comprises an anionic compound; or combinations thereof. 7. The device of claim 6 , wherein: the Group 3 to Group 10 metal is selected from the group consisting of Mo, W, Nb, Ni, Fe, V, Cr, Mn, and combinations thereof; and the Group 16 element is selected from the group consisting of S, Se, Te, and combinations thereof. 8. The device of claim 1 , wherein the metal chalcogenide is selected from the group consisting of MoS 2 , NbSe 2 , TiS 2 , ZrS 2 , HfS 2 , TaS 2 , TeS 2 , ReS 2 , PtS 2 , SnS 2 , SnSe 2 , TiSe 2 , ZrSe 2 , HfSe 2 , VSe 2 , TaSe 2 , TeSe 2 , ReSe 2 , PtSe 2 , TiTe 2 , ZrTe 2 , VTe 2 , NbTe 2 , TaTe 2 , WTe 2 , CoTe 2 , RhTe 2 , IrTe 2 , NiTe 2 , PdTe 2 , PtTe 2 , SiTe 2 , NbS 2 , WS 2 , MoSe 2 , WSe 2 , MoTe 2 , and combinations thereof. 9. The device of claim 1 , wherein the metal chalcogenide is selected from the group consisting of MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , and combinations thereof. 10. The device of claim 1 , wherein: the aqueous electrolyte material comprises an acid; and the aqueous amphiphile material comprises an anionic compound. 11. The device of claim 10 , wherein the acid has a pKa of about 3 or less as determined by potentiometric titration. 12. The device of claim 1 , wherein the aqueous electrolyte material comprises sulfuric acid, nitric acid, phosphoric acid, hydrochloric acid, hydroiodic acid, hydrobromic acid, or combinations thereof. 13. The device of claim 1 , wherein the aqueous amphiphile material comprises sodium dodecyl sulfate, sodium stearate, sodium lauroyl sarcosinate, cholic acid, deoxycholic acid, glycolic acid ethoxylate 4-tert-butylphenyl ether, glycolic acid ethoxylate laurylphenyl ether, glycolic acid ethoxylate oleyl ether, ammonium dodecyl sulfate, dioctyl sodium sulfosuccinate, sodium dodecylbenzesulfonate, sodium lauryl sulfate, sodium lauryl ether sulfate, 3-sulfopropyl ethoxylate laurylphenyl ether, perfluorooctanesulfonic acid, perfluorobutane sulfonic acid, or combinations thereof. 14. The device of claim 1 , wherein: the aqueous electrolyte material comprises sulfuric acid; and the aqueous amphiphile material comprises sodium dodecyl sulfate. 15. A conversion process, comprising: introducing water and an amphiphile material with a metal chalcogenide to form a composition; and introducing a voltage to the composition to form a conversion product. 16. The conversion process of claim 15 , further comprising introducing an electrolyte material with the metal chalcogenide. 17. The conversion process of claim 15 , wherein the metal chalcogenide is represented by the formula: ME 2 , wherein: M is a Group 3 to Group 10 metal of the periodic table of elements, and E is a Group 16 element of the periodic table of elements. 18. The conversion process of claim 17 , wherein: M is selected from the group consisting of Mo, W, Nb, Ni, Fe, V, Cr, Mn, and combinations thereof; and E is selected from the group consisting of S, Se, Te, and combinations thereof. 19. The conversion process of claim 15 , wherein the metal chalcogenide is selected from the group consisting of MoS 2 , NbSe 2 , TiS 2 , ZrS 2 , HfS 2 , TaS 2 , TeS 2 , ReS 2 , PtS 2 , SnS 2 , SnSe 2 , TiSe 2 , ZrSe 2 , HfSe 2 , VSe 2 , TaSe 2 , TeSe 2 , ReSe 2 , PtSe 2 , TiTe 2 , ZrTe 2 , VTe 2 , NbTe 2 , TaTe 2 , WTe 2 , CoTe 2 , RhTe 2 , IrTe 2 , NiTe 2 , PdTe 2 , PtTe 2 , SiTe 2 , NbS 2 , WS 2 , MoSe 2 , WSe 2 , MoTe 2 , and combinations thereof. 20. The conversion process of claim 15 , wherein the metal chalcogenide is selected from the group consisting of MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , and combinations thereof.
Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title
Selenium; Compounds thereof · CPC title
by electrolysis of water · CPC title
Tellurium; Compounds thereof · CPC title
consisting of a single catalytic element or catalytic compound · CPC title
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