Switch linearization with asymmetrical anti-series varactor pair

Patent metadata

Field	Value
Publication number	US-12052015-B2
Application number	US-202318141927-A
Country	US
Kind code	B2
Filing date	May 1, 2023
Priority date	Dec 31, 2020
Publication date	Jul 30, 2024
Grant date	Jul 30, 2024

Abstract

Described herein are switches with asymmetrical anti-series varactor pairs to improve switching performance. The disclosed switches can include asymmetrical varactor pairs to reduce distortions. The asymmetry in the varactor pairs can be associated with geometry of each varactor in the pair. The disclosed switches can stack both symmetrical and asymmetrical varactor pairs. The disclosed switches with asymmetrical anti-series varactor pairs can be configured to improve both H 2 and H 3 simultaneously.

First claim

What is claimed is:

1. A method of manufacturing a radio-frequency switch, the method comprising:
forming a series arm on a semiconductor die by coupling an input node to an output node with a switch field-effect transistor (FET);
forming a shunt arm on the semiconductor die by coupling the series arm to a reference potential node through a shunt FET; and
forming a varactor stack on the semiconductor die by coupling a pair of anti-series varactors between the series arm and the reference potential node in such a way that the varactor stack is in parallel with the shunt arm, the pair of anti-series varactors being formed with a first varactor having a first width and a second varactor having a second width different from the first width to achieve a tailored asymmetry, the tailored asymmetry of the varactor stack configured to generate distortions that reduce distortions generated by the shunt arm or by the series arm, the difference between the first width and the second width being configured to reduce second order harmonics generated by the shunt arm or by the series arm.

2. The method of claim 1 wherein the varactor stack comprises a plurality of asymmetric anti-series varactor pairs, the tailored asymmetry of the varactor stack being an aggregated asymmetry of each asymmetric varactor pair in the varactor stack.

3. The method of claim 2 wherein the varactor stack does not include any symmetric anti-series varactor pairs.

4. The method of claim 1 further comprising forming a symmetric anti-series varactor pair in the varactor stack.

5. The method of claim 1 wherein the first width and the second width are tailored to reduce third order harmonics generated by the shunt arm or by the series arm.

6. The method of claim 1 wherein the shunt arm comprises a plurality of FETs.

7. The method of claim 1 wherein the series arm comprises a plurality of FETs.

8. A method of manufacturing a radio-frequency switch module, the method comprising:
mounting a semiconductor die on a packaging substrate, the semiconductor die formed with a series arm that couples an input node to an output node with a switch field-effect transistor (FET); the semiconductor die further formed with a shunt arm that couples the series arm to a reference potential node through a shunt FET; and the semiconductor die further formed with a varactor stack that couples a pair of anti-series varactors between the series arm and the reference potential node in such a way that the varactor stack is in parallel with the shunt arm, the pair of anti-series varactors being formed with a first varactor having a first width and a second varactor having a second width different from the first width to achieve a tailored asymmetry, the tailored asymmetry of the varactor stack configured to generate distortions that reduce distortions generated by the shunt arm or by the series arm, the difference between the first width and the second width being configured to reduce second order harmonics generated by the shunt arm or by the series arm.

9. The method of claim 8 wherein the varactor stack comprises a plurality of asymmetric anti-series varactor pairs, the tailored asymmetry of the varactor stack being an aggregated asymmetry of each asymmetric varactor pair in the varactor stack.

10. The method of claim 9 wherein the varactor stack does not include any symmetric anti-series varactor pairs.

11. The method of claim 8 wherein the semiconductor die is further formed with a symmetric anti-series varactor pair in the varactor stack.

12. The method of claim 8 wherein the first width and the second width are tailored to reduce third order harmonics generated by the shunt arm or by the series arm.

13. The method of claim 8 wherein the shunt arm comprises a plurality of FETs.

14. The method of claim 8 wherein the series arm comprises a plurality of FETs.

15. A method of manufacturing a wireless device, the method comprising:
implementing a transceiver configured to process radio-frequency (RF) signals;
coupling an antenna to the transceiver, the antenna configured to facilitate transmission of an amplified RF signal;
connecting a power amplifier to the transceiver, the power amplifier configured to generate the amplified RF signal; and
connecting a switch to the antenna and the power amplifier, the switch formed on a semiconductor die mounted on a packaging substrate, the semiconductor die formed with a series arm that couples an input node to an output node with a switch field-effect transistor (FET); the semiconductor die further formed with a shunt arm that couples the series arm to a reference potential node through a shunt FET; and the semiconductor die further formed with a varactor stack that couples a pair of anti-series varactors between the series arm and the reference potential node in such a way that the varactor stack is in parallel with the shunt arm, the pair of anti-series varactors being formed with a first varactor having a first width and a second varactor having a second width different from the first width to achieve a tailored asymmetry, the tailored asymmetry of the varactor stack configured to generate distortions that reduce distortions generated by the shunt arm or by the series arm, the difference between the first width and the second width being configured to reduce second order harmonics generated by the shunt arm or by the series arm.

16. The method of claim 15 wherein the varactor stack comprises a plurality of asymmetric anti-series varactor pairs, the tailored asymmetry of the varactor stack being an aggregated asymmetry of each asymmetric varactor pair in the varactor stack.

17. The method of claim 16 wherein the varactor stack does not include any symmetric anti-series varactor pairs.

18. The method of claim 15 wherein the semiconductor die is further formed with a symmetric anti-series varactor pair in the varactor stack.

Assignees

• Skyworks Solutions Inc

Inventors

• Zhu Yu
• Klimashov Oleksiy
• Dicarlo Paul T

Classifications

• H10D1/64

  Variable-capacitance diodes, e.g. varactors · CPC title

• H04B1/44 Primary

  Transmit/receive switching · CPC title

• H03K17/161

  in field-effect transistor switches · CPC title

• H03K17/6874

  in a symmetrical configuration · CPC title

• H03K17/567

  Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT · CPC title