Amplifier circuit

Patent metadata

Field	Value
Publication number	US-12051998-B2
Application number	US-202217726667-A
Country	US
Kind code	B2
Filing date	Apr 22, 2022
Priority date	Jun 29, 2021
Publication date	Jul 30, 2024
Grant date	Jul 30, 2024

Abstract

An amplifier circuit includes a first amplifier that amplifies a high frequency signal, and a load circuit that changes a load impedance of the first amplifier without being controlled by an external circuit so that a saturation power at a first temperature is higher than a saturation power at a second temperature lower than the first temperature, and an efficiency at the first temperature is lower than an efficiency at the second temperature.

First claim

What is claimed is:

1. An amplifier circuit comprising:
a first amplifier that amplifies a high frequency signal; and
a load circuit that changes a load impedance of the first amplifier without being controlled by an external circuit so that a saturation power at a first temperature is higher than a saturation power at a second temperature lower than the first temperature, and an efficiency at the first temperature is lower than an efficiency at the second temperature, and
wherein the load circuit includes a reactance element, and a resistance element having a first resistance value at the first temperature and a second resistance value at the second temperature different from each other.

2. The amplifier circuit according to claim 1 , wherein
the reactance element is connected in series between the first amplifier and an output terminal, and the resistor element is connected in parallel with the reactance element between the first amplifier and the output terminal.

3. The amplifier circuit according to claim 2 , wherein
the load impedance is inductive, and a resistive component of the load impedance at the first temperature is higher than a resistive component of the load impedance at the second temperature.

4. The amplifier circuit according to claim 3 , wherein
the reactance element is a capacitive element, and
the first resistance value is lower than the second resistance value.

5. The amplifier circuit according to claim 1 , wherein
the resistive element is a thermistor.

6. The amplifier circuit according to claim 1 , further comprising:
a transistor that has a first terminal connected to a first end of the reactance element and a second terminal connected to a second end of the reactance element, and is the resistance element; and
an adjustment circuit that makes a voltage of a control terminal of the transistor different between the first temperature and the second temperature.

7. The amplifier circuit according to claim 1 , further comprising:
a diode that is connected in parallel with the reactance element and is the resistance element; and
an adjustment circuit that makes a voltage difference across both ends of the diode different between the first temperature and the second temperature.

8. The amplifier circuit according to claim 1 , wherein
the first amplifier is a GaN HEMT.

9. The amplifier circuit according to claim 1 , further comprising:
a second amplifier that amplifies an output signal of the first amplifier.

Assignees

• Sumitomo Electric Industries

Inventors

• Hashinaga Tatsuya

Classifications

• H03F1/565 Primary

  using inductive elements · CPC title

• H03F3/195

  in integrated circuits · CPC title

• H03F1/30 Primary

  Modifications of amplifiers to reduce influence of variations of temperature or supply voltage {or other physical parameters (in differential amplifiers H03F3/45479)} · CPC title

• H03F3/54

  Amplifiers using transit-time effect in tubes or semiconductor devices (parametric amplifiers H03F7/00; solid state travelling-wave devices H10N70/10) · CPC title

• H03F1/14

  by use of neutralising means · CPC title