Power semiconductor device and power semiconductor core module
US-2018331077-A1 · Nov 15, 2018 · US
Pressure-contact-type semiconductor device
US12051671B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12051671-B2 |
| Application number | US-201917293579-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 23, 2019 |
| Priority date | Jan 23, 2019 |
| Publication date | Jul 30, 2024 |
| Grant date | Jul 30, 2024 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
The present invention has an object to enhance manufacturability of a pressure-contact-type semiconductor device. A pressure-contact-type semiconductor device according to the present invention includes: a semiconductor chip, the semiconductor chip including a guard ring and a gate signal input/output part in the first main surface; a first external electrode being formed on a side of the first main surface of the semiconductor chip; a conductive pattern being formed on the first external electrode; a contact pin connecting the gate signal input/output part and the conductive pattern; a plate-like electrode being provided on the second main surface of the semiconductor chip; a disc spring being provided on the plate-like electrode; and a second external electrode being provided on the disc spring, the second external electrode and the first external electrode interposing the semiconductor chip.
First claim
Opening claim text (preview).
The invention claimed is: 1. A pressure-contact-type semiconductor device comprising: a semiconductor chip including a first main surface and a second main surface being a surface to face the first main surface, the semiconductor chip including a gate signal input/output part in the first main surface; a first external electrode being formed on a side of the first main surface of the semiconductor chip; a conductive pattern being formed on the first external electrode; a contact pin connecting the gate signal input/output part and the conductive pattern; a plate-like electrode being provided on the second main surface of the semiconductor chip; a disc spring being provided on the plate-like electrode; and a second external electrode being provided on the disc spring, the second external electrode and the first external electrode interposing the semiconductor chip. 2. The pressure-contact-type semiconductor device according to claim 1 , wherein the gate signal input/output part is provided at an end portion of the first main surface of the semiconductor chip. 3. The pressure-contact-type semiconductor device according to claim 1 , wherein an area of a main surface of the plate-like electrode is larger than an area of the second main surface of the semiconductor chip. 4. The pressure-contact-type semiconductor device according to claim 1 , further comprising a coupling member connecting the plate-like electrode and the second external electrode, wherein the coupling member uses, as a main material, aluminum, copper, silver, gold, or molybdenum. 5. The pressure-contact-type semiconductor device according to claim 1 , wherein the semiconductor chip is a semiconductor chip using a wide-bandgap semiconductor.
Assignees
Inventors
Classifications
- H10W90/00Primary
Package configurations · CPC title
- H10W72/00Primary
Interconnections or connectors in packages · CPC title
for connecting multiple chips together · CPC title
Shapes or dispositions of interconnections · CPC title
having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type · CPC title
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Frequently asked questions
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- What does patent US12051671B2 cover?
- The present invention has an object to enhance manufacturability of a pressure-contact-type semiconductor device. A pressure-contact-type semiconductor device according to the present invention includes: a semiconductor chip, the semiconductor chip including a guard ring and a gate signal input/output part in the first main surface; a first external electrode being formed on a side of the first…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 30 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).