Optical resonator system, narrowband mid-infrared radiation source

Patent metadata

Field	Value
Publication number	US-12050340-B2
Application number	US-202218046231-A
Country	US
Kind code	B2
Filing date	Oct 13, 2022
Priority date	Oct 21, 2021
Publication date	Jul 30, 2024
Grant date	Jul 30, 2024

Abstract

An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.

First claim

What is claimed is:

1. An optical resonator system, comprising:
a multi-strip waveguide structure having a plurality of semiconductor strips that are spaced for guiding an IR radiation;
a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure comprises an alternating arrangement of semiconductor strips and interjacent dielectric strips and comprises a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure,
wherein the metal strip and an adjacent semiconductor strip are arranged to provide a metal-semiconductor interface at the boundary region of the STP resonance structure, and
wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other in a common system plane; and
an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure, wherein the multi-strip waveguide structure and the optical coupling structure are formed from a unitary rectangular slab having a common width with the STP resonance structure.

2. The optical resonator system according to claim 1 , wherein the STP resonance structure is implemented as a Bragg mirror structure laterally extending in the common system plane.

3. The optical resonator system according to claim 1 , wherein a semiconductor material of the multi-strip waveguide structure, of the STP resonance structure and of the optical coupling structure comprises a polysilicon material, which is applied on a first main surface region of a substrate, which provides the common system plane of the optical resonator system.

4. The optical resonator system according to claim 1 , wherein the semiconductor strips of the multi-strip waveguide structure have a width between 1.3 and 1.5 μm, a height between 0.9 and 1.1 μm and a distance between 0.25 and 0.35 μm, and in particular a width of 1.4 μm, a height of 1 μm and a distance of 0.3 μm.

5. The optical resonator system according to claim 1 ,
wherein a first semiconductor strip of the STP resonance structure at the boundary region of the STP resonance structure has a width between 1.0 and 1.15 μm and a height between 0.9 and 1.1 μm, and in particular a width of 1.07 μm and a height of 1 μm, and
wherein the semiconductor strips of the STP resonance structure other than the first semiconductor strip have a width between 0.35 and 0.45 μm, a height between 0.9 and 1.1 μm and a distance between 0.5 and 0.6 μm, and in particular a width of 0.4 μm, a height of 1 μm and a distance of 0.55 μm.

6. The optical resonator system according to claim 1 , wherein the semiconductor layer of the optical coupling structure has a length between 1.7 and 2.1 μm and a height between 0.9 and 1.1 μm, and in particular a length of 1.9 μm and a height of 1 μm.

7. The optical resonator system according to claim 1 , wherein the multi-strip waveguide structure comprises a plurality of slab waveguides for guiding slab modes of the IR radiation.

8. A narrowband mid-infrared radiation source, comprising:
the optical resonator system according to claim 1 ; and
an infrared radiation emitter for emitting a broadband infrared radiation to the STP resonance structure, wherein the IR radiation in a resonance wavelength range of the STP resonance structure propagates from the STP resonance structure to the optical coupling structure and is coupled into the multi-strip waveguide structure.

9. The narrowband mid-infrared radiation source according to claim 8 , wherein the STP resonance structure is configured as an optical filter structure to filter the broadband infrared radiation emitted by the infrared radiation emitter and to provide the IR radiation as a filtered infrared radiation having a center wavelength according to the resonance wavelength range of the STP resonance structure.

10. The narrowband mid-infrared radiation source according to claim 9 , wherein the multi-strip waveguide structure is configured to guide the IR radiation having the center wavelength, wherein the guided IR radiation comprises an evanescent field component for interacting with a surrounding atmosphere.

11. The narrowband mid-infrared radiation source according to claim 9 , wherein the optical coupling structure is configured to couple a mode of the IR radiation with the center wavelength into the multi-strip waveguide structure.

12. The narrowband mid-infrared radiation source according to claim 8 , wherein the metal strip adjacent to a first semiconductor strip of the STP resonance structure at the boundary region of the STP resonance structure is arranged to form a heating element and is configured to have in an actuated condition an operating temperature in a range between 600 and 1000 or between 600 and 700K, and wherein the infrared radiation emitter is connected to a power source for providing electrical energy to bring the infrared radiation emitter in the actuated condition.

13. A fluid sensor, comprising:
the narrowband mid-infrared radiation source according to claim 8 , and
a mid-infrared radiation detector configured to provide a detector output signal based on an intensity of guided infrared radiation received from the multi-strip waveguide structure.

14. The fluid sensor according to claim 13 , wherein the mid-infrared radiation detector comprises a thermopile structure, wherein the mid-infrared radiation detector is configured to sense an incoming guided infrared radiation which is a measure of a concentration of a target fluid in a surrounding atmosphere based on evanescent field absorption effected by the target fluid, wherein an interaction of an evanescent field component with the target fluid in a surrounding atmosphere results in a reduction of transmitted IR radiation due to absorption which is a measure for a target fluid concentration in the surrounding atmosphere.

15. The fluid sensor according to claim 13 , wherein a substrate comprises a cavity vertically below at least one of the infrared radiation emitter and the mid-infrared radiation detector.

16. A method of operating an optical resonator system, comprising: a multi-strip waveguide structure having a plurality of spaced semiconductor strips for guiding an IR radiation; a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure comprises an alternating arrangement of semiconductor strips and interjacent dielectric strips and comprises a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and an adjacent semiconductor strip are arranged to provide a metal-semiconductor interface at the boundary region of the STP resonance structure, and the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other in a common system plane; and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure, and wherein the multi-strip waveguide structure and the optical coupling structure are formed from a unitary rectangular slab having a common width with the STP resonance structure, the method comprising:
receiving IR radiation by the multi-strip waveguide structure; and
optically

Assignees

• Infineon Technologies Ag

Inventors

• Puehringer Gerald
• Stocker Gerald
• Tortschanoff Andreas
• Jannesari Reyhaneh
• Fleury Clement
• Grille Thomas
• Jakoby Bernhard
• Consani Cristina

Classifications

• G02B2006/12104

  Mirror; Reflectors or the like · CPC title

• G02B6/1223

  high refractive index type, i.e. high-contrast waveguides · CPC title

• G02B6/1226

  involving surface plasmon interaction · CPC title

• G02B2006/12138

  Sensor · CPC title

• G01N21/3504

  for analysing gases, e.g. multi-gas analysis · CPC title