Manufacturing method of porous silicon material, porous silicon material, and power storage device

US12049685B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12049685-B2
Application numberUS-202318308736-A
CountryUS
Kind codeB2
Filing dateApr 28, 2023
Priority dateJun 22, 2021
Publication dateJul 30, 2024
Grant dateJul 30, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material.

First claim

Opening claim text (preview).

What is claimed is: 1. A porous silicon material comprising skeletal silicon with a three-dimensional network structure having voids that is formed of silicon having a lattice constant of 5.435 Å or less, wherein: an average porosity of the porous silicon material is in a range of 50% by volume or more and 95% by volume or less; a proportion of Si contained in the porous silicon material as an element, excluding oxygen, is 85% by mass or more; a proportion of Al contained in the porous silicon material as a first element is in a range of 15% by mass or less; and Al is present on a surface of the porous silicon material, wherein the Al present on the surface of the porous silicon material is an oxide. 2. The porous silicon material according to claim 1 , wherein the proportion of the first element contained in the porous silicon material is in a range of 0.1% by mass or more and 5% by mass or less. 3. The porous silicon material according to claim 1 , wherein the average porosity is 60% by volume or more. 4. The porous silicon material according to claim 1 , wherein the oxide comprises Al oxide. 5. The porous silicon material according to claim 4 , wherein the oxide further comprises one or more of AlSi oxide, AlFe oxide, SiFe oxide, AlSiFe oxide. 6. The porous silicon material according to claim 5 , wherein the oxide comprises AlSi oxide. 7. The porous silicon material according to claim 5 , wherein the oxide comprises AlFe oxide. 8. The porous silicon material according to claim 5 , wherein the oxide comprises SiFe oxide. 9. The porous silicon material according to claim 5 , wherein the oxide comprises AlSiFe oxide. 10. The porous silicon material according to claim 1 , wherein the skeletal silicon has no solid solution of Al.

Assignees

Inventors

Classifications

  • Silicon or alloys based on silicon · CPC title

  • C01B33/021Primary

    Preparation (chemical coating from the vapour phase C23C16/00) · CPC title

  • C22C21/02Primary

    with silicon as the next major constituent · CPC title

  • Negative electrodes · CPC title

  • Energy storage using batteries · CPC title

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What does patent US12049685B2 cover?
The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatm…
Who is the assignee on this patent?
Toyota Motor Co Ltd
What technology area does this patent fall under?
Primary CPC classification C01B33/021. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jul 30 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).