Semiconductor module comprising a resin case and an external connection terminal

Patent metadata

Field	Value
Publication number	US-12046539-B2
Application number	US-202117542949-A
Country	US
Kind code	B2
Filing date	Dec 6, 2021
Priority date	Dec 25, 2020
Publication date	Jul 23, 2024
Grant date	Jul 23, 2024

Abstract

A semiconductor module includes a resin case housing a semiconductor element; an insulating layer extending outward from the resin case; and a first external connection terminal extending outward from the resin case, arranged above the insulating layer so as to face the insulting layer, the first external connection terminal having a non-contact portion that is not in contact with the insulating layer in a thickness direction of the insulating layer at a position overlapping the insulating layer in a plan view.

First claim

What is claimed is:

1. A semiconductor module, comprising:
a resin case housing a semiconductor element;
an insulating layer extending outward from the resin case in a plane perpendicular to a thickness direction, the insulating layer being in contact with the resin case; and
a first external connection terminal extending outward from the resin case in a plane perpendicular to the thickness direction, the first external connection terminal being in contact with the resin case and being arranged above the insulating layer so as to face the insulating layer in the thickness direction, thereby creating an overlapping area in which the first external connection terminal and the insulating layer overlap with each other when viewed in the thickness direction, the first external connection terminal having a non-contact portion that is not in contact with the insulating layer in the thickness direction in at least a portion of the overlapping area.

2. The semiconductor module according to claim 1 ,
wherein the insulating layer extends linearly into the resin case, and
wherein the first external connection terminal further has a first portion facing the insulating layer above the insulating layer inside the resin case, a second portion in contact with the insulating layer inside the resin case, and a third portion having both ends bent and connected to the first portion and the second portion, respectively, inside the resin case.

3. The semiconductor module according to claim 1 , wherein the first external connection terminal is in contact with the insulating layer outside the resin case, and the non-contact portion is a recess formed on a surface of the first external connection terminal that is in contact with the insulating layer.

4. The semiconductor module according to claim 3 , wherein the recess extends in a direction that intersects a direction extending from the resin case outward.

5. The semiconductor module according to claim 4 , wherein the non-contact portion has an oval shape or a rectangular shape in a plan view.

6. The semiconductor module according to claim 1 , wherein the first external connection terminal has at least one protrusion on a surface in the vicinity of the non-contact portion.

7. The semiconductor module according to claim 6 , wherein a distance of the protrusion from the resin case is greater than a half of a distance of an end of the first external connection terminal from the resin case.

8. The semiconductor module according to claim 1 , wherein an entire surface, on a side of the insulating layer, of a portion of the first external connection terminal extending outward from the resin case is the non-contact portion.

9. The semiconductor module according to claim 1 , further comprising a second external connection terminal on a surface of the insulating layer opposite to the first external connection terminal.

10. The semiconductor module according to claim 9 , wherein the second external connection terminal projects outward from an outer circumference of the resin case in a plan view.

11. A semiconductor device, comprising:
the semiconductor module as set forth in claim 1 ; and
a capacitor having a first terminal and a second terminal,
wherein the first external connection terminal and the second terminal of the capacitor are electrically connected by laser welding via a laser welded portion of the first external connection terminal.

12. The semiconductor device according to claim 11 , further comprising:
a flat plate-shaped connecting member, one end of which is connected to the first external connection terminal, and the other end of which is connected to the second terminal of the capacitor,
wherein the laser welded portion is provided at a connection portion of the first external connection terminal and the connecting member and another laser welded portion is provided at a connection portion of the second terminal and the connecting member.

13. A semiconductor device, comprising:
the semiconductor module as set forth in claim 9 ; and
a capacitor having a first terminal and a second terminal,
wherein the second external connection terminal and the first terminal of the capacitor are electrically connected by laser welding via a laser welded portion of the second external connection terminal and the first terminal.

14. A method of manufacturing a semiconductor device, comprising:
preparing a semiconductor module that includes:
a resin case housing a semiconductor element,
an insulating layer extending outward from the resin case in a plane perpendicular to a thickness direction, the insulating layer being in contact with the resin case, and
a first external connection terminal extending outward from the resin case in a plane perpendicular to the thickness direction, the first external connection terminal being in contact with the resin case and being arranged above the insulating layer so as to face the insulating layer in the thickness direction, thereby creating an overlapping area in which the first external connection terminal and the insulating layer overlap with each other when viewed in the thickness direction, the first external connection terminal having a non-contact portion that is not in contact with the insulating layer in the thickness direction in at least a portion of the overlapping area;

preparing a capacitor having a first terminal and a second terminal; and
electrically connecting the first external connection terminal of the semiconductor module and the second terminal of the capacitor by laser welding via a laser welded portion.

15. The method according to claim 14 , wherein the laser welded portion that electrically connects the first external connection terminal and the second terminal is formed by radiating a laser beam from a side of the first external connection terminal opposite to the non-contact portion.

16. The method according to claim 14 , further comprising:
electrically connecting the second external connection terminal of the semiconductor module and the first terminal of the capacitor by laser welding via another laser welded portion.

17. The method according to claim 14 ,
wherein the semiconductor module further includes a flat plate-shaped connecting member, one end of which is connected to the first external connection terminal, and the other end of which is connected to the second terminal of the capacitor, and
wherein the method includes:
laser welding the first external connection electrode and a connection portion of the connecting member and laser welding the second terminal of the capacitor and the another connection portion of the connecting member.

18. The semiconductor module according to claim 1 , wherein the first external connection terminal has a contact portion that is in contact with the insulating layer in a portion of the overlapping area.

19. The semiconductor module according to claim 1 , wherein the first external connection terminal has a coplanar peripheral portion completely surrounding the non-contact portion, the peripheral portion of the first external connection terminal being in direct contact with the insulating layer.

20. The method according to claim 14 , wherein the first external connection terminal has a contact portion that is in contact with the insulating layer in a portion of the overlapping area.

Assignees

• Fuji Electric Co Ltd

Inventors

• Hinata Yuichiro
• Murata Yuma
• Kanai Naoyuki
• Kato Ryoichi

Classifications

• H10W42/00

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title

• H10W44/601

  Capacitive arrangements (H10W44/20 takes precedence) · CPC title

• H10W70/40 Primary

  Leadframes · CPC title

• H01R43/0221

  Laser welding (H01R43/0228 takes precedence) · CPC title

• H01G2/00

  Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00 · CPC title