Substrate treatment apparatus and substrate treatment method

Patent metadata

Field	Value
Publication number	US-12046487-B2
Application number	US-202117315830-A
Country	US
Kind code	B2
Filing date	May 10, 2021
Priority date	Apr 22, 2016
Publication date	Jul 23, 2024
Grant date	Jul 23, 2024

Abstract

According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and houses a substrate including a silicon substrate. The heater heats the solution over a normal boiling point of the solution. The pipe supplies heated solution heated by the heater into the housing while generating air bubbles.

First claim

The invention claimed is:

1. A substrate treatment method comprising:
providing a housing containing a solution of phosphoric acid and water at a boiling temperature;
circulating the solution of phosphoric acid and water from an overflow of the housing through a pipe system external to the housing comprising a pump which applies pressure to the solution in the pipe greater than a pressure in the housing and a heating unit which heats the solution to a temperature above a normal boiling point of the solution,
returning the pressurized and heated solution to a bottom of the housing;
immersing a plurality of substrates which comprise a silicon nitride film in the boiling solution of the housing;
etching the substrates to remove silicon nitride to obtain etched substrates;
removing the etched substrates from the housing; and
treating the etched substrates with an alkaline solution;
wherein
the solution in the pipe is returned to the bottom of the housing through a pipe containing a plurality of openings arranged in intervals of D1,
the plurality of substrates is arranged in rows arranged vertical to the pipe, and when the solution in the pipe exits through the plurality of openings, the solution boils generating gas bubbles having a diameter d which is from 0.5 mm to less than D1,
the bubbles rise between the vertical rows of substrates to the surface of the solution,
the pipe is spaced apart from and under an outer edge of each substrate,
the plurality of openings is provided on a surface of the pipe in a direction facing the substrates, and
the rising bubbles flow the phosphoric acid between the substrates.

2. The substrate treatment method according to claim 1 ,
further comprising removing particles from the solution which is circulating in the pipe system;
wherein
the pipe system further comprises a filter which removes the particles from the solution.

3. The substrate treatment method according to claim 1 , further comprising adding water or phosphoric acid to the solution in the overflow of the housing to adjust the concentration of phosphoric acid in the solution of phosphoric acid and water.

4. The substrate treatment method according to claim 1 , wherein the interval of the openings is equal to that of the substrates.

Assignees

• Kioxia Corp

Inventors

• Kitamura Yoshinori
• Sato Katsuhiro
• Ashidate Hiroaki

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/282

  of inorganic materials · CPC title

• H10P72/0426 Primary

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• B01F23/23

  by introducing gases into liquid media, e.g. for producing aerated liquids · CPC title

• B05D1/34

  Applying different liquids or other fluent materials simultaneously · CPC title