Memory system

US12046300B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12046300-B2
Application numberUS-202318459501-A
CountryUS
Kind codeB2
Filing dateSep 1, 2023
Priority dateDec 11, 2020
Publication dateJul 23, 2024
Grant dateJul 23, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

According to one embodiment, a memory system includes a nonvolatile memory and a memory controller configured to cause the nonvolatile memory to execute a first process of reading data based on a first request from a host device. The memory controller is configured to, when the first request is received from the host device while causing the nonvolatile memory to execute a second process, hold interruption of the second process until a first number becomes a first threshold value or more. The first number is a number of the first requests to be performed in the memory controller. The first threshold value is an integer of 2 or more.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of controlling a nonvolatile memory, comprising: causing the nonvolatile memory to execute a first process of reading data based on one or more first requests from a host; determining that one of the first requests is received from the host while causing the nonvolatile memory to execute a second process; and in response to determining that the one of the first requests is received from the host while causing the nonvolatile memory to execute the second process, holding interruption of the second process until a first number becomes a first threshold value or larger, the first number being the number of the first requests to be performed, the first threshold value being an integer of two or more. 2. The method according to claim 1 , further comprising: determining that a first period becomes a second threshold value or longer while holding the interruption of the second process, the first period being a consecutive period during which the first number is one or larger; and in response to determining that the first period becomes the second threshold value or longer while holding the interruption of the second process, interrupting the second process. 3. The method according to claim 1 , further comprising: determining that a second period becomes a third threshold value or longer while holding the interruption of the second process and the first number is one or larger, the second period being a consecutive period during which the second process is executed and does not include a period during which the second process is interrupted; and in response to determining that the second period becomes the third threshold value or longer while holding the interruption of the second process and the first number is one or larger, interrupting the second process. 4. The method according to claim 3 , wherein a starting point of the second period is when the second process is started. 5. The method according to claim 3 , wherein a starting point of the second period is when the second process is resumed from the interruption. 6. The method according to claim 3 , wherein the nonvolatile memory includes a memory cell array and a page buffer, the second process is a program process to program data from the page buffer to the memory cell array, and a starting point of the second period is when the program process is started. 7. The method according to claim 3 , wherein the nonvolatile memory includes a memory cell array and a page buffer, the second process is a program process to program data from the page buffer to the memory cell array, and a starting point of the second period is when a data-in process to transfer the data to the page buffer is started. 8. The method according to claim 1 , further comprising: interrupting the second process; and holding resuming of the interrupted second process until a third period becomes a fourth threshold value or longer while the second process is interrupted, the third period being a consecutive period during which the second process is interrupted. 9. The method according to claim 1 , further comprising: interrupting the second process; and while the second process is interrupted: causing the nonvolatile memory to execute the first process; and holding resuming of the interrupted second process until a fourth period becomes a fifth threshold value or longer, the fourth period being a consecutive period during which the second process is interrupted and the first process is not executed. 10. The method according to claim 1 , further comprising: interrupting the second process; and determining that a fifth period becomes a sixth threshold value or longer while the second process is interrupted, the fifth period being a period during which the second process is interrupted; and in response to determining that the fifth period becomes the sixth threshold value or longer while the second process is interrupted, resuming the interrupted second process. 11. The method according to claim 10 , wherein the fifth period is a consecutive period. 12. The method according to claim 10 , wherein the fifth period is a cumulative period of one or more periods during which the second process is interrupted. 13. The method according to claim 1 , wherein the method is executed in a memory system, and the method further comprises: changing the first threshold value on the basis of characteristics of a workload of the memory system or a second request from the host, the characteristics of the workload including at least one of the first number, an idle time of the memory system, and an amount of data received from the host to be written in the nonvolatile memory. 14. The method according to claim 2 , wherein the method is executed in a memory system, and the method further comprises: changing the second threshold value on the basis of characteristics of a workload of the memory system or a second request from the host, the characteristics of the workload including at least one of the first number, an idle time of the memory system, and an amount of data received from the host to be written in the nonvolatile memory. 15. The method according to claim 3 , wherein the method is executed in a memory system, and the method further comprises: changing the third threshold value on the basis of characteristics of a workload of the memory system or a second request from the host, the characteristics of the workload including at least one of the first number, an idle time of the memory system, and an amount of data received from the host to be written in the nonvolatile memory. 16. The method according to claim 1 , wherein the second process includes a program process or an erase process. 17. A method of controlling a nonvolatile memory, the nonvolatile memory including a first plane and a second plane, said method comprising: causing the nonvolatile memory to execute a first process of reading data from the first plane and the second plane in parallel on the basis of one or more first requests corresponding to the first plane and one or more second requests corresponding to the second plane; determining that one of the first requests or one of the second requests is received from the host while causing the nonvolatile memory to execute a second process; and in response to determining that the one of the first requests or the one of the second requests is received while causing the nonvolatile memory to execute the second process, holding interruption of the second process until both of a first number and a second number become a first threshold value or larger, the first number being the number of the first requests to be performed, the second number being the number of the second requests to be performed, the first threshold value being an integer of one or more. 18. The method according to claim 17 , further comprising: determining that a first period becomes a second threshold value or longer while holding the interruption of the second process, the first period being a consecutive period during which the first number or the second number is one or larger; and in response to determining that the first period becomes the second threshold value or longer while holding the interruption of the second process, interrupting the second process. 19. The method according to claim 17 , further comprising: determining that a sum of the first number and the second number becomes a second threshold value or larger while holding the interruption of

Assignees

Inventors

Classifications

  • Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management · CPC title

  • with priority control · CPC title

  • Programming or data input circuits · CPC title

  • Sensing or reading circuits; Data output circuits · CPC title

  • Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

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What does patent US12046300B2 cover?
According to one embodiment, a memory system includes a nonvolatile memory and a memory controller configured to cause the nonvolatile memory to execute a first process of reading data based on a first request from a host device. The memory controller is configured to, when the first request is received from the host device while causing the nonvolatile memory to execute a second process, hold …
Who is the assignee on this patent?
Kioxia Corp
What technology area does this patent fall under?
Primary CPC classification G11C16/32. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 23 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).