Photoresist for semiconductor fabrication

Patent metadata

Field	Value
Publication number	US-12044966-B2
Application number	US-202318355641-A
Country	US
Kind code	B2
Filing date	Jul 20, 2023
Priority date	Sep 30, 2020
Publication date	Jul 23, 2024
Grant date	Jul 23, 2024

Abstract

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

First claim

What is claimed is:

1. An organometallic precursor, comprising:
an aromatic di-dentate ligand;
a transition metal coordinated to the aromatic di-dentate ligand; and
an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal,
wherein the aromatic di-dentate ligand comprises a plurality of pyrazine molecules.

2. The organometallic precursor of claim 1 , wherein the aromatic di-dentate ligand comprises 2,2′-bipyrazine.

3. The organometallic precursor of claim 1 , wherein the transition metal has a high atomic absorption cross section.

4. The organometallic precursor of claim 1 , wherein the transition metal is selected from a group consisting of tin (Sn), bismuth (Bi), antimony (Sb), indium (In), and tellurium (Te).

5. The organometallic precursor of claim 1 , further comprising:
poly(2-hydroxyethyl methacrylate) (pHEMA), poly(4-hydroxystyrene) (PHS), polyglycidyl ether, or polyether polyol.

6. The organometallic precursor of claim 1 , wherein the EUV cleavable ligand comprises an alkenyl group or a carboxylate group.

7. The organometallic precursor of claim 1 , wherein the EUV cleavable ligand comprises a fluoro-substitute.

8. An organometallic precursor, comprising:
an aromatic di-dentate ligand comprising a first pyrazine ring and a second pyrazine ring;
a transition metal coordinated to a nitrogen atom on the first pyrazine ring and a nitrogen atom on the second pyrazine ring;
a first EUV cleavable ligand coordinated to the transition metal; and
a second EUV cleavable ligand coordinated to the transition metal.

9. The organometallic precursor of claim 8 ,
wherein the aromatic di-dentate ligand comprises bipyrazine,
wherein the first pyrazine ring is connected to the second pyrazine ring.

10. The organometallic precursor of claim 8 , wherein the aromatic di-dentate ligand comprises 2,2′-bipyrazine.

11. The organometallic precursor of claim 8 , wherein the transition metal has a high atomic absorption cross section.

12. The organometallic precursor of claim 8 , wherein the transition metal is selected from a group consisting of tin (Sn) ion, bismuth (Bi) ion, antimony (Sb) ion, indium (In) ion, and tellurium (Te) ion.

13. The organometallic precursor of claim 8 , further comprising:
poly(2-hydroxyethyl methacrylate) (pHEMA), poly(4-hydroxystyrene) (PHS), polyglycidyl ether, or polyether polyol.

14. The organometallic precursor of claim 8 , wherein the EUV cleavable ligand comprises an alkenyl group or a carboxylate group.

15. The organometallic precursor of claim 14 , wherein the EUV cleavable ligand comprises a fluoro-substitute.

16. An organometallic precursor, comprising:
an aromatic di-dentate ligand;
a transition metal coordinated to the aromatic di-dentate ligand; and
an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal,
wherein the aromatic di-dentate ligand comprises a plurality of pyrazine molecules,
wherein the transition metal is selected from a group consisting of tin (Sn), bismuth (Bi), antimony (Sb), indium (In), and tellurium (Te).

17. The organometallic precursor of claim 2 , wherein the aromatic di-dentate ligand comprises 2,2′-bipyrazine.

18. The organometallic precursor of claim 1 , further comprising:
poly(2-hydroxyethyl methacrylate) (pHEMA), poly(4-hydroxystyrene) (PHS), polyglycidyl ether, or polyether polyol.

19. The organometallic precursor of claim 1 , wherein the EUV cleavable ligand comprises an alkenyl group or a carboxylate group.

20. The organometallic precursor of claim 1 , wherein the EUV cleavable ligand comprises a fluoro-substitute.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liu Chih-Cheng
• Kuo Yi-Chen
• Chen Yen-Yu
• Li Jr-Hung
• Yang Chi-Ming
• Lee Tze-Liang

Classifications

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/0042 Primary

  with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence) · CPC title

• G03F7/40 Primary

  Treatment after imagewise removal, e.g. baking · CPC title

• C07F5/00 Primary

  Compounds containing elements of Groups 3 or 13 of the Periodic Table · CPC title

• C07F11/00

  Compounds containing elements of Groups 6 or 16 of the Periodic Table · CPC title