Light receiving device and light receiving apparatus

US12044569B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12044569-B2
Application numberUS-202318124952-A
CountryUS
Kind codeB2
Filing dateMar 22, 2023
Priority dateMay 30, 2022
Publication dateJul 23, 2024
Grant dateJul 23, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A light receiving device includes a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface, and a metal pattern layer provided on the second major surface. The first major surface is provided with a first input port configured to receive an input of signal light, a second input port configured to receive an input of local oscillation light, a first light receiving element optically coupled to the first input port, an optical 90 degree hybrid element optically coupled to the first input port and the second input port, and a second light receiving element optically coupled to the optical 90 degree hybrid element. The metal pattern layer contains at least one of titanium or chromium.

First claim

Opening claim text (preview).

What is claimed is: 1. A light receiving device comprising: a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface; and a metal pattern layer provided directly on the second major surface, wherein the first major surface is provided with a first input port configured to receive an input of signal light, a second input port configured to receive an input of local oscillation light, a first light receiving element optically coupled to the first input port, an optical 90 degree hybrid element optically coupled to the first input port and the second input port, and a second light receiving element optically coupled to the optical 90 degree hybrid element, and wherein the metal pattern layer contains at least one of titanium or chromium. 2. The light receiving device according to claim 1 , wherein the metal pattern layer includes a portion between the first light receiving element and the second input port as seen from a direction normal to the first major surface. 3. The light receiving device according to claim 2 , the portion overlaps a line segment connecting the first light receiving element and the second input port as seen from the direction. 4. The light receiving device according to claim 1 , wherein the metal pattern layer includes a first layer and a second layer, wherein the first layer is disposed between the second layer and the semiconductor substrate, wherein the first layer contains at least one of titanium or chromium, and wherein the second layer contains gold. 5. The light receiving device according to claim 1 , wherein the metal pattern layer is situated so as not to overlap the optical 90 degree hybrid element as seen from a direction normal to the first major surface. 6. The light receiving device according to claim 1 , wherein the second major surface has an uneven region. 7. The light receiving device according to claim 6 , wherein the metal pattern layer includes a portion on the uneven region. 8. The light receiving device according to claim 1 , wherein the first major surface is provided with a variable optical attenuator optically coupled to the first input port and the optical 90 degree hybrid element. 9. The light receiving device according to claim 8 , wherein the metal pattern layer is situated to overlap the variable optical attenuator as seen from a direction normal to the first major surface. 10. The light receiving device according to claim 1 , wherein the first major surface is provided with at least one optical demultiplexer optically coupled to the first input port and the optical 90 degree hybrid element. 11. The light receiving device according to claim 10 , wherein the metal pattern layer is situated to overlap the at least one optical demultiplexer as seen from a direction normal to the first major surface. 12. The light receiving device according to claim 11 , wherein the at least one optical demultiplexer comprises a first optical demultiplexer and a second optical demultiplexer, wherein the first optical demultiplexer is disposed between the first input port and the second optical demultiplexer, wherein the first optical demultiplexer is optically coupled to the first light receiving element. 13. The light receiving device according to claim 12 , wherein the first major surface is provided with a variable optical attenuator optically coupled to the first input port and the optical 90 degree hybrid element, wherein the second optical demultiplexer is optically coupled to the variable optical attenuator. 14. A light receiving apparatus comprising: the light receiving device according to claim 1 ; and a carrier including a support substrate having a third major surface disposed so as to oppose the second major surface, and a solder pattern layer provided on the third major surface and joined to the metal pattern layer. 15. The light receiving device according to claim 1 , wherein the first input port, the second input port, the first light receiving element, the second light receiving element and the optical 90 degree hybrid element are monolithically integrated on the first major surface. 16. The light receiving device according to claim 1 , wherein the first light receiving element is not optically coupled to the optical 90 degree hybrid element. 17. The light receiving device according to claim 1 , wherein the first light receiving element is optically coupled to the first input port via an optical waveguide and a variable optical attenuator. 18. The light receiving device according to claim 1 , wherein the semiconductor substrate is a III-V compound semiconductor substrate, and the first light receiving element comprises a III-V compound semiconductor layer.

Assignees

Inventors

Classifications

  • Photodiode · CPC title

  • the coupling comprising intermediate optical elements, e.g. lenses, holograms (encapsulated active devices H01S5/02208) · CPC title

  • the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers (G02B6/4246 takes precedence) · CPC title

  • Coherent receivers · CPC title

  • Indexed discrete filters · CPC title

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What does patent US12044569B2 cover?
A light receiving device includes a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface, and a metal pattern layer provided on the second major surface. The first major surface is provided with a first input port configured to receive an input of signal light, a second input port configured to receive an input of local oscillation …
Who is the assignee on this patent?
Sumitomo Electric Industries
What technology area does this patent fall under?
Primary CPC classification G01J1/44. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 23 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).