Thin film and fabrication method therefor and QLED device

Patent metadata

Field	Value
Publication number	US-12043777-B2
Application number	US-202016907020-A
Country	US
Kind code	B2
Filing date	Jun 19, 2020
Priority date	Dec 26, 2017
Publication date	Jul 23, 2024
Grant date	Jul 23, 2024

Abstract

A thin film includes a polymer material and quantum dots (QDs). The QDs are dispersed in the polymer material. The polymer material includes at least one barrier polymer material. A weight average molecular weight of the at least one barrier polymer material is higher than 100,000.

First claim

What is claimed is:

1. A thin film, consisting of:
a polymer material including at least two barrier polymer materials; and
quantum dots (QDs) dispersed in the polymer material, a weight average molecular weight of the at least two barrier polymer materials being higher than 100,000,
wherein the at least two barrier polymer materials are dispersed with the QDs in the same thin film, the at least two barrier polymer material being a medium for dispersing the QDs in the thin film, and the at least two barrier polymer materials include:
one or more of poly(N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine (poly-TPD) and derivatives thereof; and
one of: poly (9-vinyl carbazole) (PVK) or derivatives thereof, poly (9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) or derivatives thereof, and poly (2-methoxy-5-(2′-ethylhexyloxy)-1,4-P-phenylacetylene) (MEH-PPV) or derivatives thereof.

2. The thin film of claim 1 , wherein the QDs are oil soluble QDs, and a surface ligand of the oil soluble QDs includes thiol or carboxylic acid.

3. The thin film of claim 2 , wherein the QDs include one or more of group II-VI QDs, group III-V QDs, and group IV-VI QDs.

4. The thin film of claim 3 , wherein the QDs include Te-containing group II-VI QDs or Cd—Te-containing group II-VI QDs.

5. The thin film of claim 1 , wherein a carrier mobility of the at least two barrier polymer materials is above 10 −8 cm 2 V −1 s −1 .

6. The thin film of claim 1 , wherein a mass fraction of the QDs in the thin film is 0.5-90%.

7. The thin film of claim 6 , wherein:
the weight average molecular weight of the at least two barrier polymer materials is between 100,000 and 300,000, and the mass fraction of the QDs in the thin film is 0.5-30%; or
the weight average molecular weight of the at least two barrier polymer materials is between 300,000 and 500,000, and the mass fraction of the QDs in the thin film is 0.5-66%.

8. The thin film of claim 6 , wherein the mass fraction of the QDs in the thin film is 0.5-20%, and/or a carrier mobility of the at least two barrier polymer materials is above 10 −6 cm 2 V −1 s −1 .

9. The thin film of claim 1 , wherein the polymer material dispersed with the QDs in the same thin film further includes at least one charge transport regulating polymer material, and the weight average molecular weight of the at least one charge transport regulating polymer material is lower than 100,000.

10. The thin film of claim 9 , wherein a mass fraction of the charge transport regulating polymer material is lower than 10% of the polymer material.

11. The thin film of claim 1 , wherein:
the polymer material further comprises one charge transport regulating polymer material;
the weight average molecular weight of the charge transport regulating polymer material is lower than 100,000; and
a mass fraction of the charge transport regulating polymer material is lower than 10% of the polymer material.

12. The thin film of claim 11 , wherein:
a carrier mobility of each of the two barrier polymer materials is below 10 −6 cm 2 V −1 s −1 ,
the charge transport regulating polymer material includes a conducting polymer material; and
the mass fraction of the charge transport regulating polymer material is 0.5-5% of the polymer material.

13. The thin film of claim 12 , wherein the conducting polymer includes one of polyacetylene, polyphenylene sulfide, polyaniline, polypyrrole, and polythiophene.

14. The thin film of claim 11 , wherein:
a carrier mobility of each of the two barrier polymer materials is above 10 −6 cm 2 V −1 s −1 ,
the charge transport regulating polymer material includes a non-conducting polymer material; and
the mass fraction of the charge transport regulating polymer material is 5-10% of the polymer material.

15. The thin film of claim 14 , wherein the non-conducting polymer includes one of phenolic resin, polyethylene, polydimethylsiloxane (PDMS), polystyrene, polymethacrylate, polyacrylate, and polycarbonate.

16. The thin film of claim 1 , wherein the weight average molecular weight of the at least two barrier polymer materials is between 500,000 and 1500,000, and the mass fraction of the QDs in the thin film is 0.5-99%.

17. A method for forming a thin film, comprising:
mixing quantum dots (QDs) and a polymer material in a dispersion medium to form a mixed solution; and
forming a thin film from the mixed solution, wherein the thin film includes consists of:
the polymer material and
the quantum dots (QDs) dispersed in the polymer material, the polymer material including at least two barrier polymer materials, the at least two barrier polymer materials being a medium for dispersing the QDs in the thin film, and a weight average molecular weight of the at least two barrier polymer materials being higher than 100,000,
wherein the at least two barrier polymer materials dispersed with the QDs in the same thin film include:
one or more of poly(N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine (poly-TPD) and derivatives thereof; and
one of: poly (9-vinyl carbazole) (PVK) or derivatives thereof, poly (9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) or derivatives thereof, and poly (2-methoxy-5-(2′-ethylhexyloxy)-1,4-P-phenylacetylene) (MEH-PPV) or derivatives thereof.

18. A quantum dot light-emitting diode (QLED) device, comprising:
an electron transport layer;
a hole transport layer; and
a quantum dot (QD) emissive layer disposed between the electron transport layer and the hole transport layer, including a thin film, wherein the thin film consists of:
a polymer material; and
quantum dots (QDs) dispersed in the polymer material, the polymer material including at least two barrier polymer materials, the at least two barrier polymer materials being a medium for dispersing the QDs in the thin film, and a weight average molecular weight of the at least two barrier polymer materials being higher than 500,000,
wherein the at least two barrier polymer materials dispersed with the QDs in the same thin film include:
one or more of poly(N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine (poly-TPD) and derivatives thereof; and
one of: poly (9-vinyl carbazole) (PVK) or derivatives thereof, poly (9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) or derivatives thereof, and poly (2-methoxy-5-(2′-ethylhexyloxy)-1,4-P-phenylacetylene) (MEH-PPV) or a derivative thereof.

19. The QLED device of claim 18 , wherein a mass fraction of the QDs in the thin film is 2-10%.

Assignees

• Tcl Tech Group Corp

Inventors

• Yang Yixing
• Cheng Luling

Classifications

• H10H20/80

  Constructional details · CPC title

• H10K85/1135

  Polyethylene dioxythiophene [PEDOT]; Derivatives thereof · CPC title

• H10K50/115

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

• H10K85/151

  Copolymers · CPC title

• H10K85/115

  Polyfluorene; Derivatives thereof · CPC title