High frequency, high power film bulk acoustic resonators

Patent metadata

Field	Value
Publication number	US-12040778-B2
Application number	US-202117167909-A
Country	US
Kind code	B2
Filing date	Feb 4, 2021
Priority date	Jun 15, 2018
Publication date	Jul 16, 2024
Grant date	Jul 16, 2024

Abstract

There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the diaphragm and less than or equal to 2.5 times the thickness of the diaphragm.

First claim

It is claimed:

1. An acoustic resonator device comprising:
a substrate that includes a base and an intermediate layer having a surface;
a piezoelectric plate supported by the substrate and having a portion that forms a diaphragm over a cavity; and
an interdigital transducer (IDT) at a surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm,
wherein a thickness of the interleaved fingers of the IDT is less than 0.375 times the thickness of the diaphragm,
wherein a ratio of a pitch of the interleaved fingers is between 2 and 20 times a width of the interleaved fingers, and
wherein the piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric plate and transverse to a direction of an electric field created by the IDT.

2. The acoustic resonator device of claim 1 , wherein the thickness of the interleaved fingers and the thickness of the diaphragm are measured in a direction orthogonal to a surface of the diaphragm.

3. The acoustic resonator device of claim 1 , wherein the cavity extends into at least one of the base and the intermediate layer of the substrate.

4. The acoustic resonator device of claim 1 , wherein the interleaved fingers of the IDT are aluminum or an alloy comprising at least 50% aluminum.

5. The acoustic resonator device of claim 1 ,
wherein the thickness of the diaphragm is greater than or equal to 100 nm and less than or equal to 1500 nm, and
wherein the pitch of the interleaved fingers of the IDT is greater than or equal to 2 times the thickness of the diaphragm and less than or equal to 20 times the thickness of the diaphragm.

6. A filter device, comprising:
a substrate;
one or more piezoelectric plates supported by the substrate and having one or more diaphragms spanning respective cavities; and
a conductor pattern at the piezoelectric plate, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators, interleaved fingers of each of the plurality of IDTs on a diaphragm of the one or more diaphragms,
wherein the interleaved fingers of all of the plurality of IDTs have a common finger thickness that is less than 0.375 times a thickness of the diaphragm,
wherein a ratio of a pitch of the interleaved fingers of at least one of the acoustic resonator is between 2 and 20 times a width of the interleaved fingers of the at least one of the acoustic resonator,
wherein the one or more piezoelectric plates and the plurality of IDTs are configured such that a radio frequency signal applied to each IDT excites a primary shear acoustic mode in the respective diaphragm of the one or more piezoelectric plates, and
wherein the primary shear acoustic mode is a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to a surface of the one or more diaphragms and transverse to a direction of an electric field created by the respective IDT.

7. The filter device of claim 6 , wherein the thickness of the interleaved fingers and the thickness of the diaphragm are measured in a direction orthogonal to a surface of the diaphragm.

8. The filter device of claim 6 , wherein the cavities extend into at least one of a base and an intermediate layer of the substrate.

9. The filter device of claim 6 , wherein the interleaved fingers of all of the plurality of IDTs are aluminum or an alloy comprising at least 50% aluminum.

10. The filter device of claim 6 ,
wherein the thickness of the diaphragm is greater than or equal to 100 nm and less than or equal to 1500 nm, and
wherein the pitch of the interleaved fingers of the at least one of the acoustic resonator is greater than or equal to 2 times the thickness of the diaphragm and less than or equal to 20 times the thickness of the diaphragm of the at least one of the acoustic resonator.

11. The filter device of claim 6 , wherein the plurality of acoustic resonators include one or more shunt resonators and one or more series resonators.

12. The filter device of claim 11 , further comprising:
a first dielectric layer having a first thickness on top of and in between the fingers of the IDTs of the one or more shunt resonators; and
a second dielectric layer having a second thickness on top of and in between the fingers of the IDTs of the one or more series resonators,
wherein the second thickness is less than the first thickness and greater than zero.

13. An acoustic resonator device comprising:
a substrate that includes a base and an intermediate layer having a surface;
a piezoelectric plate supported by the substrate and having a portion that forms a diaphragm over a cavity; and
an interdigital transducer (IDT) at a surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm,
wherein a thickness of the interleaved fingers of the IDT is less than 0.5 times the thickness of the diaphragm,
wherein a ratio of a pitch of the interleaved fingers is between 2 and 20 times a width of the interleaved fingers, and
wherein the piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric plate and transverse to a direction of an electric field created by the IDT.

14. The filter device of claim 13 , wherein a thickness of the interleaved fingers of the IDT is less than 0.375 times the thickness of the diaphragm.

15. The acoustic resonator device of claim 13 , wherein the thickness of the interleaved fingers and the thickness of the diaphragm are measured in a direction orthogonal to a surface of the diaphragm.

16. The acoustic resonator device of claim 13 , wherein the cavity extends into at least one of the base and the intermediate layer of the substrate.

17. The acoustic resonator device of claim 13 , wherein the interleaved fingers of the IDT are aluminum or an alloy comprising at least 50% aluminum.

18. The acoustic resonator device of claim 13 ,
wherein the thickness of the diaphragm is greater than or equal to 200 nm and less than or equal to 1000 nm, and
wherein the pitch of the interleaved fingers of the IDT is greater than or equal to 2 times the thickness of the diaphragm and less than or equal to 20 times the thickness of the diaphragm.

19. The acoustic resonator device of claim 13 , wherein an aperture of the IDT is greater than or equal to 20 microns and less than or equal to 60 microns, with the aperture measured as an overlapping distance of two opposing interleaved fingers of the IDT that is perpendicular to a length of the interleaved fingers.

20. The acoustic resonator device of claim 13 , wherein the diaphragm is contiguous with the piezoelectric plate around at least 50% of a perimeter of the cavity and the intermediate layer is at least one of silicon dioxide or silicon nitride.

Assignees

• Murata Manufacturing Co

Inventors

• Garcia Bryant
• Hammond Robert
• Turner Patrick
• Fenzi Neal
• Plesski Viktor
• Yantchev Ventsislav

Classifications

• H03H9/02

  Details · CPC title

• H03H9/13

  for networks consisting of piezoelectric or electrostrictive materials (for networks using surface acoustic waves H03H9/145) · CPC title

• H03H9/02015

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H9/54

  comprising resonators of piezoelectric or electrostrictive material (comprising resonators using surface acoustic waves H03H9/64) · CPC title

• H03H9/02157

  Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness · CPC title