Precursor solution of indium gallium zinc oxide film and method of manufacturing indium gallium zinc oxide thin film transistor

Patent metadata

Field	Value
Publication number	US-12040408-B2
Application number	US-202017057053-A
Country	US
Kind code	B2
Filing date	Sep 4, 2020
Priority date	Aug 11, 2020
Publication date	Jul 16, 2024
Grant date	Jul 16, 2024

Abstract

The present disclosure provides a precursor solution of an indium gallium zinc oxide film and a method of preparing an indium gallium zinc oxide thin film transistor. The precursor solution is provided with an indium salt, a gallium salt, a zinc salt, a stabilizing agent, and a solvent. The stabilizing agent is ethanolamine. Use of ethanolamine helps to promote an oxidation process of the precursor solution, and reduce an oxygen vacancy concentration in the indium gallium zinc oxide film, so as to improve negative bias of a threshold voltage of a channel layer made of the indium gallium zinc oxide film in a thin film transistor.

First claim

What is claimed is:

1. A method of manufacturing an indium gallium zinc oxide thin film transistor, comprising steps of:
(1) preparing a precursor solution of an indium gallium zinc oxide film preparing a precursor solution of an indium gallium zinc oxide film;
(2) evenly applying the precursor solution on a substrate with a surface pretreatment, and sequentially pre-baking and annealing to obtain an indium gallium zinc oxide film;
(3) patterning the indium gallium zinc oxide film to obtain a patterned indium gallium zinc oxide film; and
(4) forming a source-drain electrode on the patterned indium gallium zinc oxide film to obtain the indium gallium zinc oxide thin film transistor,
wherein the step (4) of preparing the source-drain electrode is performed by aligning and attaching a metal mask having a pattern of the source-drain electrode to the patterned indium gallium zinc oxide film, and a metal film is formed by vacuum evaporation at a rate of 2-15 Å/s under 9.9×10 −4 to 9.9×10 −3 pascals.

2. The method according to claim 1 , wherein the step (1) of preparing the precursor solution comprises steps of preparing a mixture of an indium salt, a gallium salt, and a zinc salt according to a molar ratio of an indium ion, a gallium ion, and a zinc ion; adding ethanolamine into the mixture according to a mass concentration of the ethanolamine; and standing still after completely mixing.

3. The method according to claim 1 , wherein the step (2) of applying is performed by spin-coating, or by dropping 10-15 microliters of the precursor solution per square centimeter on the substrate; after spin-coating at 300-700 revolutions per minute for 3-5 seconds, accelerating to 2500-4500 revolutions per minute and then spin-coating for 30-50 seconds; conditions of pre-baking are baking at 100-120° C. for 5-10 minutes; and conditions of annealing are thermal treatment at 350-500° C. for 40-60 minutes.

4. The method according to claim 1 , wherein in the step (3), the patterned indium gallium zinc oxide film has a thickness ranging from 20 to 30 nm.

5. The method according to claim 1 , wherein the step (3) of patterning comprises steps of evenly applying a photoresist on the indium gallium zinc oxide film, and then sequentially pre-baking, masking, exposing, first annealing, developing, etching, washing, removing the photoresist, and second annealing; wherein the step of applying is performed by spinning-coating, or by dropping the photoresist on an entire surface of the indium gallium zinc oxide film; after spin-coating at 500-700 revolutions per minutes for 4-8 seconds, accelerating to 3500-4500 revolutions per minute and then spin-coating for 35-50 seconds; conditions of pre-baking are baking at 145-150° C. for 65-75 seconds; the step of exposing is performed by irradiating under ultraviolet ray for 24-26 seconds; the time of developing is 13-18 seconds; conditions of the first annealing are thermal treatment at 90-100° C. for 60-70 seconds; and conditions of the second annealing are thermal treatment at 350-450° C. for 40-60 minutes.

6. A method of manufacturing an indium gallium zinc oxide thin film transistor, comprising steps of:
(1) preparing a precursor solution of an indium gallium zinc oxide film preparing a precursor solution of an indium gallium zinc oxide film;
(2) evenly applying the precursor solution on a substrate with a surface pretreatment, and sequentially pre-baking and annealing to obtain an indium gallium zinc oxide film;
(3) patterning the indium gallium zinc oxide film to obtain a patterned indium gallium zinc oxide film; and
(4) forming a source-drain electrode on the patterned indium gallium zinc oxide film to obtain the indium gallium zinc oxide thin film transistor,
wherein the step (3) of patterning comprises steps of evenly applying a photoresist on the indium gallium zinc oxide film, and then sequentially pre-baking, masking, exposing, first annealing, developing, etching, washing, removing the photoresist, and second annealing; wherein the step of applying is performed by spinning-coating, or by dropping the photoresist on an entire surface of the indium gallium zinc oxide film; after spin-coating at 500-700 revolutions per minutes for 4-8 seconds, accelerating to 3500-4500 revolutions per minute and then spin-coating for 35-50 seconds; conditions of pre-baking are baking at 145-150° C. for 65-75 seconds; the step of exposing is performed by irradiating under ultraviolet ray for 24-26 seconds; the time of developing is 13-18 seconds; conditions of the first annealing are thermal treatment at 90-100° C. for 60-70 seconds; and conditions of the second annealing are thermal treatment at 350-450° C. for 40-60 minutes.

7. The method according to claim 6 , wherein the step (1) of preparing the precursor solution comprises steps of preparing a mixture of an indium salt, a gallium salt, and a zinc salt according to a molar ratio of an indium ion, a gallium ion, and a zinc ion; adding ethanolamine into the mixture according to a mass concentration of the ethanolamine; and standing still after completely mixing.

8. The method according to claim 6 , wherein the step (2) of applying is performed by spin-coating, or by dropping 10-15 microliters of the precursor solution per square centimeter on the substrate; after spin-coating at 300-700 revolutions per minute for 3-5 seconds, accelerating to 2500-4500 revolutions per minute and then spin-coating for 30-50 seconds; conditions of pre-baking are baking at 100-120° C. for 5-10 minutes; and conditions of annealing are thermal treatment at 350-500° C. for 40-60 minutes.

9. The method according to claim 6 , wherein in the step (3), the patterned indium gallium zinc oxide film has a thickness ranging from 20 to 30 nm.

Assignees

• Shenzhen China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Sun Hejing
• Qiu Hengda
• Zhou Hang

Classifications

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title

• H10D99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D62/80

  characterised by the materials · CPC title

• C23C14/24

  Vacuum evaporation · CPC title