Method for manufacturing source-drain electrode, method for manufacturing array substrate, and display mechanism

Patent metadata

Field	Value
Publication number	US-12040334-B2
Application number	US-202117370399-A
Country	US
Kind code	B2
Filing date	Jul 8, 2021
Priority date	Jul 27, 2020
Publication date	Jul 16, 2024
Grant date	Jul 16, 2024

Abstract

The present disclosure relates to a source-drain electrode and a method for manufacturing the same, an array substrate and a method for manufacturing the same, and a display mechanism. A method for manufacturing a source-drain electrode includes steps of: disposing a conductive layer on an underlay; forming a photoresist layer on a side of the conductive layer away from the underlay; exposing and then developing the photoresist layer to form grooves passing through the photoresist layer on the photoresist layer, so as to form a patterned photoresist layer; and electrochemically depositing a functional material on the patterned photoresist layer and then removing the photoresist layer to obtain the conductive layer on which a patterned layer is formed, so as to obtain the source-drain electrode. The source-drain electrode manufactured by the above method has a higher conductivity.

First claim

What is claimed is:

1. A method for manufacturing a source-drain electrode, comprising steps of:
disposing a conductive layer on an underlay;
forming a photoresist layer on a side of the conductive layer away from the underlay;
exposing and then developing the photoresist layer to form grooves passing through the photoresist layer on the photoresist layer, so as to form a patterned photoresist layer; and
electrochemically depositing a functional material on the patterned photoresist layer and then removing the patterned photoresist layer to obtain the conductive layer on which a patterned layer is formed, so as to obtain the source-drain electrode;
wherein the step of electrochemically depositing the functional material on the patterned photoresist layer and then removing the photoresist layer to obtain the conductive layer on which the patterned layer is formed comprises: sequentially electrochemically depositing a metal material and a barrier material on the patterned photoresist layer and then removing the photoresist layer to form a metal layer and a barrier layer that are stacked, so as to obtain the patterned layer;
wherein the step of sequentially electrochemically depositing the metal material and the barrier material on the patterned photoresist layer comprises:
placing the patterned photoresist layer in an electrolyte containing a first ion and a second ion;
energizing the electrolyte under a condition of a first reduction potential or a first reduction current such that the first ion is reduced and deposited on the patterned photoresist layer to form a metal material layer; and
energizing the electrolyte under a condition of a second reduction potential or a second reduction current such that the second ion is reduced and deposited on the metal material layer to form a barrier material layer; and
wherein the first ion is Cu 2+ , the second ion is MoO 4 2− or Ti 2+ ; and/or
the electrolyte contains the first ion of 1.5 mol/L to 4.0 mol/L and the second ion of 0.25 mol/L to 0.5 mol/L; and/or
the first reduction potential is 0.3419 V, and a density of the first reduction current is in a range of 1.5 A/dm 2 to 8.0 A/dm 2 .

2. The method for manufacturing a source-drain electrode according to claim 1 , wherein the step of sequentially electrochemically depositing the metal material and the barrier material on the patterned photoresist layer comprises:
placing the patterned photoresist layer in a first electrolyte containing a first ion for electrochemical deposition such that the first ion is reduced and deposited on the patterned photoresist layer to form a metal material layer; and
placing the patterned photoresist layer on which the metal material layer is formed in a second electrolyte containing a second ion for electrochemical deposition such that the second ion is reduced and deposited on the metal material layer to form a barrier material layer.

3. The method for manufacturing a source-drain electrode according to claim 2 , wherein prior to the step of placing the patterned photoresist layer on which the metal material layer is formed in the second electrolyte for electrochemical deposition, the method further comprises a step of manufacturing the second electrolyte comprising adding the second ion into the first electrolyte to obtain the second electrolyte.

4. The method for manufacturing a source-drain electrode according to claim 2 , wherein an initial concentration of the first ion in the first electrolyte is in range of 1.5 mol/L to 4.0 mol/L, and an initial concentration of the second ion in the second electrolyte is in a range of 0.25 mol/L to 0.5 mol/L; and/or
the step of placing the patterned photoresist layer in the first electrolyte for electrochemical deposition comprises: energizing the first electrolyte under a condition of a first reduction potential or a first reduction current such that the first ion is reduced and deposited on the patterned photoresist layer to form the metal material layer, wherein the first ion is Cu 2+ , the first reduction potential is in a range of 0.34V to 0.8V, and a density of the first reduction current is in a range of 1.5 A/dm 2 to 8 A/dm 2 ; and/or
the step of placing the patterned photoresist layer on which the metal material layer is formed in the second electrolyte for electrochemical deposition comprises: energizing the second electrolyte under a condition of a second reduction potential or a second reduction current such that the second ion is reduced and deposited on the metal material layer to form the barrier material layer, wherein the second ion is MoO 4 2− or Ti 2+ ; in the case where the second ion is MoO 4 2− , the second reduction potential is in a range of −0.3V to 0.1V, and a density of the second reduction current is in a range of 0.5 A/dm 2 to 1.2 A/dm 2 ; in the case where the second ion is Ti 2+ , the second reduction potential is in a range of −1.2V to −1.7 V, and a density of the second reduction current is in a range of 5 A/dm 2 to 50 A/dm 2 .

5. The method for manufacturing a source-drain electrode according to claim 1 , wherein the underlay is a glass substrate, a plastic substrate, or a flexible substrate.

6. The method for manufacturing a source-drain electrode according to claim 1 , wherein a thickness of the underlay is in a range of 0.2 mm to 1 mm.

7. The method for manufacturing a source-drain electrode according to claim 1 , wherein the conductive layer is a metal conductive layer.

8. The method for manufacturing a source-drain electrode according to claim 1 , wherein the conductive layer is a molybdenum layer or a titanium layer.

9. The method for manufacturing a source-drain electrode according to claim 1 , wherein in the step of disposing the conductive layer on the underlay, the conductive layer is disposed on the underlay by deposition.

10. The method for manufacturing a source-drain electrode according to claim 9 , wherein a method for the deposition is vapor deposition or electrochemical deposition.

11. The method for manufacturing a source-drain electrode according to claim 9 , wherein a thickness of the conductive layer is in a range of 300 A to 800 A.

12. A method for manufacturing an array substrate, comprising steps of:
disposing a gate layer on an underlay;
disposing an insulating layer on a side of the gate layer away from the underlay;
disposing an active layer and a data line on a side of the insulating layer away from the underlay;
disposing a first conductive layer on the active layer;
forming a first photoresist layer on a side of the first conductive layer away from the underlay;
exposing and then developing the first photoresist layer to form grooves passing through the first photoresist layer on the first photoresist layer, so as to form a patterned first photoresist layer; and
electrochemically depositing a first functional material on the patterned first photoresist layer and then removing the patterned first photoresist layer to obtain the first conductive layer on which a first patterned layer is formed, so as to form a source-drain electrode, thereby obtaining an array substrate;
wherein the step of disposing the gate layer on the underlay comprises:
disposing a second conductive layer on the underlay; forming a second photoresist layer on a side of the second conductive layer away from the underlay; exposing and then developing the second photoresist layer to form grooves passing through the second photoresist layer on the second photoresist layer, so as to form a patterned second photoresist layer; and electrochemically depositing a second functional material on the patterned second photoresist layer and then removing the sec

Assignees

• Beihai Hkc Optoelectronics Technology Co Ltd
• Hkc Corp Ltd

Inventors

• Xia Yuming
• Cho En-Tsung
• Yuan Haijiang

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10D86/0241

  using liquid deposition, e.g. printing · CPC title

• H10D30/6729 Primary

  characterised by the electrodes · CPC title

• H10D86/021

  of multiple TFTs · CPC title

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title