Metal intercalation in layered MoS2 devices for enhanced photodetection

US12037259B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12037259-B2
Application numberUS-202318312840-A
CountryUS
Kind codeB2
Filing dateMay 5, 2023
Priority dateMay 6, 2022
Publication dateJul 16, 2024
Grant dateJul 16, 2024

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

The present disclosure relates to layered 2D MoS 2 nanostructures wherein light-matter interactions are enhanced by intercalation with transition metal atoms and/or post-transition metal atoms, specifically Cu and/or Sn. Photodetectors comprising Cu and/or Sn intercalated 2D MoS 2 nanostructures amplify the response in the near-infrared for devices based on 2D MoS 2 .

First claim

Opening claim text (preview).

What is claimed is: 1. A photodetector comprising 2D vertically-aligned MoS 2 (VA-MoS 2 ) layers, wherein a van der Waals (vdW) gap of at least two layers of the MoS 2 is intercalated with one or more transition metal or post-transition metal atoms. 2. The photodetector of claim 1 , wherein the one or more metal atoms comprise copper (Cu) and/or tin (Sn). 3. The photodetector of claim 1 , wherein all MoS 2 layers are intercalated with one or more metal atoms. 4. The photodetector of claim 1 , wherein the intercalated metal atoms comprise clusters of at least 2 atoms. 5. The photodetector of claim 1 , wherein the intercalated metal atoms comprise islands of about 20 nm to about 50 nm. 6. The photodetector of claim 1 , wherein the intercalated metal atoms comprise a monolayer. 7. The photodetector of claim 1 , wherein the intercalated metal atoms form clusters of at least 2 atoms and monolayers. 8. The photodetector of claim 1 , wherein the photodetector comprises a phototransistor, a photodiode, and/or a photoconductor. 9. The photodetector of claim 1 , wherein the photodetector is a part of a night-vision image intensifier. 10. A method of photodetection comprising: obtaining the photodetector of claim 1 ; and detecting a photoresponse. 11. The method of claim 10 , wherein the intercalated atom introduces electronic states near the conduction band of the MoS 2 and shift the Fermi level close to the conduction band edge. 12. The method of claim 10 , wherein the intercalated atom comprises Cu, and wherein the photoresponse comprises a plasmonic resonance at an energy of about 1 eV to about 1.3 eV and/or a plasmonic resonance at an energy of about 2 eV. 13. The method of claim 10 , wherein the intercalated atom comprises Cu and wherein the method results in a photodetection comprising a near infrared (NIR) absorption of about 20% to about 60%. 14. The method of claim 10 , wherein the intercalated atom comprises Cu and wherein the method results in a photodetection comprising a photoresponsivity of about an order of magnitude higher than a MoS 2 photodiode without intercalation over a spectral range of about 0.5 μm to about 1.1 μm. 15. The method of claim 10 , wherein the intercalated atom comprises Cu, and wherein the method results in a photodetection comprising a photoresponsivity over a broad spectral range with a maximum value of about 1×10 4 A/W to about 5×10 4 A/W. 16. The method of claim 10 , wherein the intercalated atom comprises Sn and wherein the photoresponse comprises one or more plasmonic resonance at an energy of about 1.5 eV to about 1.8 eV. 17. The method of claim 10 , wherein the intercalated atom comprises Sn, and wherein the method results in a photodetection comprising a near infrared (NIR) absorption of up to about 70%. 18. The method of claim 10 , wherein the intercalated atom comprises Sn, and wherein the method results in a photodetection comprising an enhanced photoresponsivity higher than a MoS 2 photodiode without intercalation over a spectral range of about 0.5 μm to about 1.1 μm. 19. The method of claim 10 , wherein the photoresponse comprises a broad spectral response that extends into the NIR spectrum. 20. The method of claim 10 , wherein the method is performed in low-light conditions and/or at night and/or in high vegetation terrain.

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Classifications

  • by unit-cell parameters, atom positions or structure diagrams · CPC title

  • by thermal analysis data, e.g. TGA, DTA, DSC · CPC title

  • by IR- or Raman-data · CPC title

  • by XPS, EDX or EDAX data · CPC title

  • obtained by TEM, STEM, STM or AFM · CPC title

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What does patent US12037259B2 cover?
The present disclosure relates to layered 2D MoS 2 nanostructures wherein light-matter interactions are enhanced by intercalation with transition metal atoms and/or post-transition metal atoms, specifically Cu and/or Sn. Photodetectors comprising Cu and/or Sn intercalated 2D MoS 2 nanostructures amplify the response in the near-infrared for devices based on 2D MoS 2 .
Who is the assignee on this patent?
Univ California, Univ Bar Ilan
What technology area does this patent fall under?
Primary CPC classification C01G39/06. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jul 16 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).