Low dielectric substrate for high-speed millimeter-wave communication

Patent metadata

Field	Value
Publication number	US-12035461-B2
Application number	US-202318118915-A
Country	US
Kind code	B2
Filing date	Mar 8, 2023
Priority date	Jan 29, 2021
Publication date	Jul 9, 2024
Grant date	Jul 9, 2024

Abstract

A low dielectric substrate for high-speed millimeter-wave communication includes a quartz glass cloth with a dielectric loss tangent of 0.0001 to 0.0015 and a dielectric constant of 3.0 to 3.8 at 10 GHz, and an organic resin with a dielectric loss tangent within 80% to 150% of the dielectric loss tangent of the quartz glass cloth at 10 GHz and a dielectric constant within 50% to 110% of the dielectric constant of the quartz glass cloth at 10 GHz. This provides a low dielectric substrate for high-speed millimeter-wave communication where the low dielectric substrate makes it possible to send signals that are stable and have excellent quality with no difference in propagation time between wirings even if the substrate has an uneven resin distribution and the quartz glass cloth above and below the wirings, and the difference in dielectric loss tangent between members has been reduced to lower transmission loss.

First claim

The invention claimed is:

1. A low dielectric substrate for high-speed millimeter-wave communication, the low dielectric substrate comprising:
a quartz glass cloth having a dielectric loss tangent of 0.0001 to 0.0015 at 10 GHz and a dielectric constant of 3.0 to 3.8 at 10 GHz; and
a maleimide resin having a dielectric loss tangent within a range of 80% to 150% of the dielectric loss tangent of the quartz glass cloth at 10 GHz and a dielectric constant within a range of 50% to 110% of the dielectric constant of the quartz glass cloth at 10 GHz.

2. The low dielectric substrate according to claim 1 , further comprising a silica powder having an average particle size of 30 μm or less.

3. The low dielectric substrate according to claim 2 , wherein the silica powder has a dielectric loss tangent of 0.0001 to 0.0015 at 10 GHz and a dielectric constant of 3.0 to 3.8 at 10 GHz.

4. The low dielectric substrate according to claim 3 , wherein the maleimide resin has a dielectric loss tangent of 0.0001 to 0.0020 at 10 GHz and a dielectric constant of 2.0 to 4.0 at 10 GHz.

5. The low dielectric substrate for high-speed millimeter-wave communication according to claim 3 , having a dielectric loss tangent of 0.0001 to 0.0015 at 10 GHz and a dielectric constant of 2.0 to 3.8 at 10 GHz.

6. The low dielectric substrate according to claim 3 , wherein the maleimide resin is a bismaleimide resin.

7. The low dielectric substrate according to claim 6 , wherein:
the low dielectric substrate has a dielectric loss tangent of 0.0001 to 0.0005 at 10 GHz and a dielectric constant of 2.2 to 3.7 at 10 GHz, and
the bismaleimide resin is represented by the following general formula (1):

wherein:
A independently represents a tetravalent organic group including an aromatic ring or an aliphatic ring;
B represents an alkylene chain having 6 to 18 carbon atoms and having an aliphatic ring that may contain a divalent heteroatom;
Q independently represents a linear alkylene group having 6 or more carbon atoms;
R independently represents a linear or branched alkyl group having 6 or more carbon atoms;
“n” represents a number of 1 to 10; and
“m” represents a number of 0 to 10.

8. The low dielectric substrate according to claim 2 , wherein the maleimide resin has a dielectric loss tangent of 0.0001 to 0.0020 at 10 GHz and a dielectric constant of 2.0 to 4.0 at 10 GHz.

9. The low dielectric substrate according to claim 2 , having a dielectric loss tangent of 0.0001 to 0.0015 at 10 GHz and a dielectric constant of 2.0 to 3.8 at 10 GHz.

10. The low dielectric substrate according to claim 2 , wherein the maleimide resin is a bismaleimide resin.

11. The low dielectric substrate according to claim 10 , wherein:
the low dielectric substrate has a dielectric loss tangent of 0.0001 to 0.0005 at 10 GHz and a dielectric constant of 2.2 to 3.7 at 10 GHz, and
the bismaleimide resin is represented by the following general formula (1):

wherein:
A independently represents a tetravalent organic group including an aromatic ring or an aliphatic ring;
B represents an alkylene chain having 6 to 18 carbon atoms and having an aliphatic ring that may contain a divalent heteroatom;
Q independently represents a linear alkylene group having 6 or more carbon atoms;
R independently represents a linear or branched alkyl group having 6 or more carbon atoms;
“n” represents a number of 1 to 10; and
“m” represents a number of 0 to 10.

12. The low dielectric substrate according to claim 1 , wherein the maleimide resin has a dielectric loss tangent of 0.0001 to 0.0020 at 10 GHz and a dielectric constant of 2.0 to 4.0 at 10 GHz.

13. The low dielectric substrate for high-speed millimeter-wave communication according to claim 12 , having a dielectric loss tangent of 0.0001 to 0.0015 at 10 GHz and a dielectric constant of 2.0 to 3.8 at 10 GHz.

14. The low dielectric substrate according to claim 12 , wherein the maleimide resin is a bismaleimide resin.

15. The low dielectric substrate according to claim 14 , wherein:
the low dielectric substrate has a dielectric loss tangent of 0.0001 to 0.0005 at 10 GHz and a dielectric constant of 2.2 to 3.7 at 10 GHz, and
the bismaleimide resin is represented by the following general formula (1):

wherein:
A independently represents a tetravalent organic group including an aromatic ring or an aliphatic ring;
B represents an alkylene chain having 6 to 18 carbon atoms and having an aliphatic ring that may contain a divalent heteroatom;
Q independently represents a linear alkylene group having 6 or more carbon atoms;
R independently represents a linear or branched alkyl group having 6 or more carbon atoms;
“n” represents a number of 1 to 10; and
“m” represents a number of 0 to 10.

16. The low dielectric substrate according to claim 1 , having a dielectric loss tangent of 0.0001 to 0.0015 at 10 GHz and a dielectric constant of 2.0 to 3.8 at 10 GHz.

17. The low dielectric substrate according to claim 16 , wherein the maleimide resin is a bismaleimide resin.

18. The low dielectric substrate according to claim 17 , wherein:
the low dielectric substrate has a dielectric loss tangent of 0.0001 to 0.0005 at 10 GHz and a dielectric constant of 2.2 to 3.7 at 10 GHz, and
the bismaleimide resin is represented by the following general formula (1):

wherein:
A independently represents a tetravalent organic group including an aromatic ring or an aliphatic ring;
B represents an alkylene chain having 6 to 18 carbon atoms and having an aliphatic ring that may contain a divalent heteroatom;
Q independently represents a linear alkylene group having 6 or more carbon atoms;
R independently represents a linear or branched alkyl group having 6 or more carbon atoms;
“n” represents a number of 1 to 10; and
“m” represents a number of 0 to 10.

19. The low dielectric substrate according to claim 1 , wherein the maleimide resin is a bismaleimide resin.

20. The low dielectric substrate according to claim 19 , wherein:
the low dielectric substrate has a dielectric loss tangent of 0.0001 to 0.0005 at 10 GHz and a dielectric constant of 2.2 to 3.7 at 10 GHz, and
the bismaleimide resin is represented by the following general formula (1):

wherein:
A independently represents a tetravalent organic group including an aromatic ring or an aliphatic ring;
B represents an alkylene chain having 6 to 18 carbon atoms and having an aliphatic ring that may contain a divalent heteroatom;
Q independently represents a linear alkylene group having 6 or more carbon atoms;
R independently represents a linear or branched alkyl group having 6 or more carbon atoms;
“n” represents a number of 1 to 10; and
“m” represents a number of 0 to 10.

Assignees

• Shinetsu Chemical Co

Inventors

• Shiobara Toshio
• Taguchi Yusuke
• Nomura Ryunosuke

Classifications

• H05K2201/015

  Fluoropolymer, e.g. polytetrafluoroethylene [PTFE] · CPC title

• H05K2201/0195

  Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure · CPC title

• H05K2201/0175

  Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor · CPC title

• H05K2201/0209

  Inorganic, non-metallic particles · CPC title

• H05K1/0306 Primary

  Inorganic insulating substrates, e.g. ceramic, glass · CPC title