Light detector, light detection system, LIDAR device, and moving body

Patent metadata

Field	Value
Publication number	US-12034091-B2
Application number	US-202117184297-A
Country	US
Kind code	B2
Filing date	Feb 24, 2021
Priority date	Aug 20, 2020
Publication date	Jul 9, 2024
Grant date	Jul 9, 2024

Abstract

According to one embodiment, a light detector includes a first semiconductor layer of a first conductivity type, a first region, a quenching part, a second region, and a first layer. The first region is located on a portion of the first semiconductor layer, includes a first-conductivity-type first semiconductor region that has a higher first-conductivity-type impurity concentration than the first semiconductor layer, and includes a second semiconductor region of a second conductivity type provided on the first semiconductor region. The quenching part is electrically connected to the second semiconductor region. The second region is located on another portion of the first semiconductor layer, includes a second-conductivity-type third semiconductor region, and includes a first-conductivity-type fourth semiconductor region provided on a portion of the third semiconductor region. The first layer is located on the second region and includes a resin that absorbs or reflects light.

First claim

What is claimed is:

1. A light detector, comprising:
a first semiconductor layer of a first conductivity type;
a first region provided on a portion of the first semiconductor layer, the first region including
a first semiconductor region of the first conductivity type having a higher first-conductivity-type impurity concentration than the first semiconductor layer, and
a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;

a quenching part electrically connected to the second semiconductor region;
a second region provided on another portion of the first semiconductor layer, the second region including
a third semiconductor region of the second conductivity type, and
a fourth semiconductor region provided on a portion of the third semiconductor region, the fourth semiconductor region being of the first conductivity type; and

a first layer provided on the second region, the first layer including a resin that absorbs or reflects light.

2. The detector according to claim 1 , further comprising:
a first member provided on the first layer,
the first member being light-transmissive.

3. The detector according to claim 2 , further comprising:
a filter layer provided on the first member or between the first layer and the first member,
the filter layer absorbing or reflecting light.

4. The detector according to claim 3 , wherein
a transmittance of the first layer for light of a wavelength in a first range is less than a transmittance of the first layer for light of a wavelength in a second range, and
a transmittance of the filter layer for light of a wavelength in the first range is greater than a transmittance of the filter layer for light of a wavelength in the second range.

5. The detector according to claim 2 , further comprising:
a first filter layer provided on the first member; and
a second filter layer provided between the first layer and the first member,
a transmittance of the first layer for light of a wavelength in a first range being less than a transmittance of the first layer for light of a wavelength in a second range,
transmittances of the first and second filter layers for light of a wavelength in the first range being greater than transmittances of the first and second filter layers for light of a wavelength in the second range.

6. The detector according to claim 2 , further comprising:
a lens provided between the first region and the first member,
an upper surface of the lens being curved in a convex shape.

7. The detector according to claim 6 , wherein
the lens is a microlens or a lenticular lens.

8. A light detector, comprising:
a first semiconductor layer of a first conductivity type;
a first region provided on a portion of the first semiconductor layer, the first region including
a first semiconductor region of the first conductivity type having a higher first-conductivity-type impurity concentration than the first semiconductor layer, and
a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;

a quenching part electrically connected to the second semiconductor region;
a second region provided on another portion of the first semiconductor layer, the second region including
a third semiconductor region of the second conductivity type, and
a fourth semiconductor region provided on a portion of the third semiconductor region, the fourth semiconductor region being of the first conductivity type; and

a filter layer provided on the second region,
a transmittance of the filter layer for light of a wavelength in a first range being greater than a transmittance of the filter layer for light of a wavelength in a second range.

9. The detector according to claim 8 , wherein
the filter layer is also provided on the first region.

10. The detector according to claim 8 , further comprising:
a first layer provided between the second region and the filter layer,
the first layer including a resin or a metal,
the first layer absorbing or reflecting light.

11. The detector according to claim 1 , further comprising:
a first electrode provided under the first semiconductor layer;
a conductive part surrounded with the first semiconductor layer with an insulating layer interposed; and
a second electrode provided under the conductive part,
the second electrode being separated from the first electrode.

12. The detector according to claim 11 , wherein
the conductive part is electrically connected to the second semiconductor region.

13. The detector according to claim 1 , wherein
a plurality of the first regions is arranged in a second direction and a third direction,
the second direction crosses a first direction from the first semiconductor region toward the second semiconductor region,
the third direction crosses a plane along the first and second directions, and
at least a portion of the second region is between adjacent first regions of the plurality of first regions.

14. The detector according to claim 13 , further comprising:
an insulating region provided around the plurality of first regions in the second and third directions.

15. The detector according to claim 1 , comprising:
a cell array part including the plurality of first regions; and
a control circuit part including the second region.

16. The detector according to claim 1 , wherein
the first region includes an avalanche photodiode operating in a Geiger mode.

17. A light detector, comprising:
a first semiconductor layer;
a cell array part provided on a portion of the first semiconductor layer, the cell array part including a plurality of photodiodes;
a plurality of quenching parts electrically connected respectively to the plurality of photodiodes;
a control circuit part provided on another portion of the first semiconductor layer; and
a light-absorbing layer provided on the control circuit part,
the control circuit part including a control element that selects a portion of the plurality of photodiodes,
the light detector being of a mixed-circuit-type.

18. A light detection system, comprising:
the light detector according to claim 1 ; and
a distance measuring circuit calculating a time-of-flight of light from an output signal of the light detector.

19. A lidar device, comprising:
a light source irradiating light on an object; and
the light detection system according to claim 18 detecting light reflected by the object.

20. The device according to claim 19 , further comprising:
an image recognition system generating a three-dimensional image based on an arrangement relationship of the light source and the light detector.

21. A moving body, comprising:
the lidar device according to claim 19 .

Assignees

• Toshiba Kk

Inventors

• Kwon Honam
• Suzuki Kazuhiro
• Sasaki Keita
• Shimizu Mariko

Classifications

• H10F39/107 Primary

  having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays · CPC title

• H10F30/225 Primary

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• G01S17/89

  for mapping or imaging · CPC title

• G01S17/08

  for measuring distance only (indirect measurement G01S17/46; active triangulation systems G01S17/48) · CPC title

• H10F39/807

  Pixel isolation structures · CPC title