Composition for forming block copolymer layer for formation of microphase-separated pattern

Patent metadata

Field	Value
Publication number	US-12030974-B2
Application number	US-201917258227-A
Country	US
Kind code	B2
Filing date	Jul 16, 2019
Priority date	Jul 17, 2018
Publication date	Jul 9, 2024
Grant date	Jul 9, 2024

Abstract

A self-assembled film forming composition for forming a phase-separated structure of a block copolymer layer on a substrate, containing a block copolymer and a solvent, and is configured such that: the block copolymer is obtained by bonding a silicon-free polymer to a silicon-containing polymer that contains, as a constituent unit, styrene that is substituted by a silicon-containing group; the silicon-free polymer contains a structure derived from formula [1-1] or formula [1-2]; and the silicon-containing group contains one silicon atom. [In formula [1-1] or formula [1-2], each of R 1 and R 2 independently represents a hydrogen atom, a halogen atom or an alkyl group having 1-10 carbon atoms; and each of R 3 -R 5 independently represents a hydrogen atom, a hydroxy group, a halogen atom, an alkyl group having 1-10 carbon atoms, an alkoxy group having 1-10 carbon atoms, a cyano group, an amino group, an amide group or a carbonyl group.]

First claim

The invention claimed is:

1. A formulation comprising a block copolymer composition and an underlayer film-forming composition, wherein the formulation is for forming a phase-separated structure in a block copolymer layer formed from the block copolymer composition on an underlayer film formed from the underlayer film-forming composition on a substrate,
wherein the underlayer film-forming composition comprises a copolymer comprising the following unit structures:
unit structure (A) derived from a styrene compound containing a tert-butyl group,
unit structure (B) derived from an aromatic-containing vinyl compound containing no hydroxy group with the proviso that it is different from unit structure (A),
unit structure (C) derived from a compound containing a (meth)acryloyl group and no hydroxy groups, and
unit structure (D) derived from a crosslinking group-containing compound,

wherein a copolymerization ratio relative to an entirety of the copolymer ranges from 25 to 90% by mole of unit structure (A), from 0 to 65% by mole of unit structure (B), from 0 to 65% by mole of unit structure (C), and from 10 to 20% by mole of unit structure (D),
wherein the block copolymer composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a silicon-free polymer and a silicon-containing polymer bonded together,
wherein the silicon-containing polymer comprises a unit structure represented by the following formula (2):

wherein, in formula (2), R 6 , R 7 and R 8 are each independently a C1-C10 alkyl group or a C6-C40 aryl group, and
wherein the silicon-free polymer comprises a unit structure represented by formula (1-1) or formula (1-2) below,

wherein in formula (1-1) and formula (1-2), R 1 and R 2 are each independently a hydrogen atom, a halogen atom or a C1-C10 alkyl group; and R 3 to R 5 are each independently a hydrogen atom, a hydroxy group, a halogen atom, a C1-C10 alkyl group, a C1-C10 alkoxy group, a cyano group, an amino group, an amide group or a carbonyl group.

2. The formulation according to claim 1 , wherein the formulation further comprises:
an upper layer film-forming composition for forming an upper layer film that overcoats the block copolymer layer, the upper layer film-forming composition comprising a copolymer (A) comprising unit structures (a) derived from a maleimide structure and from a styrene structure.

3. A method for producing a phase-separated pattern by a block copolymer using the formulation according to claim 1 , comprising the steps of:
(1) forming an underlayer film from the underlayer film-forming composition on a substrate,
(2) forming a block copolymer layer from the block copolymer composition on the underlayer film, and
(3) separating the block copolymer layer formed on the underlayer film into phases.

4. The method according to claim 3 for producing a phase-separated pattern by a block copolymer, further comprising the step of forming an upper layer film on the block copolymer layer between step (2) and step (3).

5. A process for manufacturing a semiconductor device using the formulation according to claim 1 , comprising the steps of:
(1) forming an underlayer film from the underlayer film-forming composition on a substrate,
(2) forming a block copolymer layer from the block copolymer composition on the underlayer film,
(3) separating the block copolymer layer formed on the underlayer film substrate into phases,
(4) etching the block copolymer layer separated into phases, and
(5) etching the substrate.

6. A laminate comprising, sequentially on a substrate:
(1) an underlayer film on the substrate, wherein the underlayer film comprises a copolymer comprising the following unit structures:
unit structure (A) derived from a styrene compound containing a tert-butyl group,
unit structure (B) derived from an aromatic-containing vinyl compound containing no hydroxy group with the proviso that it is different from unit structure (A),
unit structure (C) derived from a compound containing a (meth)acryloyl group and no hydroxy groups, and
unit structure (D) derived from a crosslinking group-containing compound,
wherein a copolymerization ratio relative to an entirety of the copolymer ranges from 25 to 90% by mole of unit structure (A), from 0 to 65% by mole of unit structure (B), from 0 to 65% by mole of unit structure (C), and from 10 to 20% by mole of unit structure (D),

(2) a block copolymer layer comprising a block copolymer comprising a silicon-free polymer and a silicon-containing polymer bonded together,
wherein the silicon-containing polymer comprises a unit structure represented by the following formula (2):

wherein, in formula (2), R 6 , R 7 and R 8 are each independently a C1-C10 alkyl group or a C6-C40 aryl group,
wherein the silicon-free polymer comprises a unit structure represented by formula (1-1) or formula (1-2) below,

wherein in formula (1-1) and formula (1-2), R 1 and R 2 are each independently a hydrogen atom, a halogen atom or a C1-C10 alkyl group; and R 3 to R 5 are each independently a hydrogen atom, a hydroxy group, a halogen atom, a C1-C10 alkyl group, a C1-C10 alkoxy group, a cyano group, an amino group, an amide group or a carbonyl group, and

(3) an upper layer film.

Assignees

• Nissan Chemical Corp

Inventors

• Mizuochi Ryuta
• Someya Yasunobu
• Wakayama Hiroyuki
• Kozawa Masami
• Tadokoro Shinsuke

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• C08J7/08

  Heat treatment · CPC title