Tunable and switchable SAW-BAW RF resonators

Patent metadata

Field	Value
Publication number	US-12028047-B2
Application number	US-202117314394-A
Country	US
Kind code	B2
Filing date	May 7, 2021
Priority date	May 12, 2020
Publication date	Jul 2, 2024
Grant date	Jul 2, 2024

Abstract

An adaptive RF acoustic resonator contains tunable and switchable hybrid surface-bulk acoustic waves (SAW-BAW). The surface and bulk acoustic waves couple for the spectral sensing and configurable filtering. The acoustic resonator includes a piezoelectric or ferroelectric layer, such as a SLAIN layer, which is patterned into interdigital transducers, and an intermediate layer of AlGaN—GaN, which is built on a SiC substrate. The device is protected under a plastic packaging cap. An external tuning voltage applies on the acoustic resonator to generate the tunable frequency and bandwidth of the bulk and surface acoustic waves. An RF switch generates an electric field to suppress a residual polarization during acoustic resonator switching. The bulk acoustic wave excited in the piezoelectric or ferroelectric layer couples with the surface acoustic wave propagating in the intermediate layer. The Sc concentration in the ferroelectric layer exceeds 28%. The transducers are capped with Bragg reflectors made of multiple Al and W layers.

First claim

The invention claimed is:

1. An acoustic resonator comprising:
a substrate;
a first layer disposed on the substrate;
a second layer disposed directly on the first layer and comprising a plurality of interdigital transducers;
a first port and a second port configured to supply a first voltage to the acoustic resonator; and
an RF switch configured to provide a second voltage over the first layer;
wherein a bulk acoustic wave is excited in the second layer, and a surface acoustic wave is generated in the first layer by coupling to the bulk acoustic wave; and
wherein the RF switch is further configured to turn off the resonator by depleting the first layer.

2. The acoustic resonator of claim 1 , wherein the substrate comprises silicon carbide.

3. The acoustic resonator of claim 1 , wherein the second layer further comprises a ferroelectric material stack, wherein the ferroelectric material stack comprises scandium, aluminum, and nitride (ScAlN), and wherein the scandium has a concentration exceeding 28%.

4. The acoustic resonator of claim 1 , wherein each of the plurality of interdigital transducers is capped with a Bragg reflector comprising alternating layers of aluminum (Al) and tungsten (W) to match acoustic impedance of the acoustic resonator.

5. The acoustic resonator of claim 1 , wherein the first layer comprises aluminum gallium nitride and gallium nitride (AlGaN—GaN).

6. The acoustic resonator of claim 1 , further comprising a third layer enclosing the resonator, wherein the third layer comprises a plastic packaging material.

7. The acoustic resonator of claim 1 , wherein the first voltage generates a tunable frequency bandwidth for the bulk acoustic wave and the surface acoustic wave.

8. The acoustic resonator of claim 1 , wherein the second voltage of the RF switch is configured to generate an RF electric field to suppress a residual polarization during switching of the acoustic resonator.

9. The acoustic resonator of claim 1 , wherein each of the plurality of interdigital transducers is patterned at a pitch of 150 nm to 1500 nm.

10. The acoustic resonator of claim 1 , wherein a layer of metallic reflector is disposed directly on an intermediate layer to reflect the surface acoustic wave.

11. The acoustic resonator of claim 1 , wherein the RF switch comprises two electrodes, wherein the two electrodes are built into the first layer via conductive plugs, and wherein the conductive plugs comprise gallium nitride.

12. The acoustic resonator of claim 11 , wherein the two electrodes of the RF switch form Schottky contacts.

13. The acoustic resonator of claim 1 , wherein the first port and the second port each further comprises a conductive layer at an interface with the first layer.

14. The acoustic resonator of claim 1 , wherein the second layer further comprises a piezoelectric material.

15. A matrix of acoustic resonators, wherein the matrix comprises of a plurality of acoustic resonators of claim 1 , and wherein the plurality of acoustic resonators is connected in a pattern combining lattice and ladder networks.

Assignees

• Univ Florida

Inventors

• Tabrizian Roozbeh

Classifications

• H03H9/02543

  Characteristics of substrate, e.g. cutting angles · CPC title

• H03H9/14544

  Transducers of particular shape or position (weighting H03H9/14517) · CPC title

• H03H9/1014

  the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device · CPC title

• H03H9/1071

  the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device · CPC title

• H03H9/0542

  consisting of a lateral arrangement (H03H9/0566 takes precedence) · CPC title